测量了20 ke V质子穿过倾斜角为+1?的聚碳酸酯微孔膜后,出射粒子的位置分布、相对穿透率以及电荷纯度随时间的演化.实验发现,能量电荷比E/q≈10~1k V的质子穿过绝缘纳米微孔的物理机理与E/q≈10~0k V和E/q≈10~2k V区域离子有显著不同....测量了20 ke V质子穿过倾斜角为+1?的聚碳酸酯微孔膜后,出射粒子的位置分布、相对穿透率以及电荷纯度随时间的演化.实验发现,能量电荷比E/q≈10~1k V的质子穿过绝缘纳米微孔的物理机理与E/q≈10~0k V和E/q≈10~2k V区域离子有显著不同.对于E/q≈10~1k V的质子穿过绝缘纳米微孔,存在一段相当长的导向建立之前(导向前)的过程,在该时期内出射质子及氢原子的特性和导向建立后的特性有很大差异.在导向前的演化过程中,我们可以观察到出射质子的峰位逐渐向孔轴向附近转移;出射氢原子由束流方向的尖峰以及孔轴向的主峰构成,峰位角保持基本不变且尖峰逐渐消失.这一过程的主要机理为微孔内表面以下的多次随机二体碰撞和近表面镜面反射两种传输方式逐步向电荷斑约束下的"导向效应"过渡的过程.对E/q≈10~1k V区间离子"导向前过程"的完整观测,使得对低能向中能过渡区间离子穿过绝缘微孔膜物理机制和图像有更深入和完整的认识,有助于约10 ke V离子微束的精确控制和应用.展开更多
Laser processing provides highly-controlled modification and on-demand fabrication of plasmon metal nanostructures for light absorption and photothermal convention.We present the laser-induced forward tansfer(LIFT)fab...Laser processing provides highly-controlled modification and on-demand fabrication of plasmon metal nanostructures for light absorption and photothermal convention.We present the laser-induced forward tansfer(LIFT)fabrication of silver nanomembranes in control of light absorption.By varying the hatch distance,different morphologies of randomly distributed plasmon silver nanostructures were produced,leading to well-controlled light absorption levels from 11%to 81%over broadband.The anti-reflection features were maintained below 17%.Equilibrated and plain absorptions were obtained throughout all absorption levels with a maximum intensity fluctuation of±8.5%for the 225μJ cases.The 45μJ pulse energy can offer a highly equilibrated absorption at a 60%absorption level with an intensity fluctuation of±1%.Pattern transfer was also achieved on a thin tape surface.The laser-transferred characters and patterns demonstrate a localized temperature rise.A rapid temperature rising of roughly 15℃can be achieved within 1 s.The LIFT process is highly efficiently fabricated with a typical speed value of 10^(3)to 10^(5)cm^(2)/h.The results indicated that LIFT is a well-controlled and efficient method for the production of optical films with specific absorption levels.展开更多
The thin emitter structure was introduced into reversely switched dynistor（RSD） to improve its turn-on characteristics. According to the analysis of turn-on condition, thin emitter structure is capable of reducing t...The thin emitter structure was introduced into reversely switched dynistor（RSD） to improve its turn-on characteristics. According to the analysis of turn-on condition, thin emitter structure is capable of reducing the extraction action for the triggering plasma layer P1 during turn-on process, and satisfying the requirement that triggering electric charge cannot be exhausted and therefore enables RSD to turn on uniformly. The on-state thin emitter RSD was equivalent to an asymmetric pin diode model. The simulation result shows that the forward voltage drop of RSD falls with the decrease of doping dose in p^＋-emitter in a certain range, and when the doping concentration is extremely tow, the decrease of the width of p^＋-emitter can obtain a tow forward voltage drop. Thin emitter RSD chips were made by sintering AI on n-Si. The test result shows that their turn-on process is uniform and the voltage drop is 7.5 V when the peak conversion current is 5 500 A.展开更多
文摘测量了20 ke V质子穿过倾斜角为+1?的聚碳酸酯微孔膜后,出射粒子的位置分布、相对穿透率以及电荷纯度随时间的演化.实验发现,能量电荷比E/q≈10~1k V的质子穿过绝缘纳米微孔的物理机理与E/q≈10~0k V和E/q≈10~2k V区域离子有显著不同.对于E/q≈10~1k V的质子穿过绝缘纳米微孔,存在一段相当长的导向建立之前(导向前)的过程,在该时期内出射质子及氢原子的特性和导向建立后的特性有很大差异.在导向前的演化过程中,我们可以观察到出射质子的峰位逐渐向孔轴向附近转移;出射氢原子由束流方向的尖峰以及孔轴向的主峰构成,峰位角保持基本不变且尖峰逐渐消失.这一过程的主要机理为微孔内表面以下的多次随机二体碰撞和近表面镜面反射两种传输方式逐步向电荷斑约束下的"导向效应"过渡的过程.对E/q≈10~1k V区间离子"导向前过程"的完整观测,使得对低能向中能过渡区间离子穿过绝缘微孔膜物理机制和图像有更深入和完整的认识,有助于约10 ke V离子微束的精确控制和应用.
基金Projects(61704090, 11904177) supported by the National Natural Science Foundation of ChinaProject(KFJJ20210205) supported by the National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology,Nanjing University of Posts and Telecommunications,China。
文摘Laser processing provides highly-controlled modification and on-demand fabrication of plasmon metal nanostructures for light absorption and photothermal convention.We present the laser-induced forward tansfer(LIFT)fabrication of silver nanomembranes in control of light absorption.By varying the hatch distance,different morphologies of randomly distributed plasmon silver nanostructures were produced,leading to well-controlled light absorption levels from 11%to 81%over broadband.The anti-reflection features were maintained below 17%.Equilibrated and plain absorptions were obtained throughout all absorption levels with a maximum intensity fluctuation of±8.5%for the 225μJ cases.The 45μJ pulse energy can offer a highly equilibrated absorption at a 60%absorption level with an intensity fluctuation of±1%.Pattern transfer was also achieved on a thin tape surface.The laser-transferred characters and patterns demonstrate a localized temperature rise.A rapid temperature rising of roughly 15℃can be achieved within 1 s.The LIFT process is highly efficiently fabricated with a typical speed value of 10^(3)to 10^(5)cm^(2)/h.The results indicated that LIFT is a well-controlled and efficient method for the production of optical films with specific absorption levels.
基金National Natural Science Foundation of China(No.50277016 and 50577028)the Specialized Research Fund for the Doctoral Program of Higher Education of China(No.20050487044)
文摘The thin emitter structure was introduced into reversely switched dynistor（RSD） to improve its turn-on characteristics. According to the analysis of turn-on condition, thin emitter structure is capable of reducing the extraction action for the triggering plasma layer P1 during turn-on process, and satisfying the requirement that triggering electric charge cannot be exhausted and therefore enables RSD to turn on uniformly. The on-state thin emitter RSD was equivalent to an asymmetric pin diode model. The simulation result shows that the forward voltage drop of RSD falls with the decrease of doping dose in p^＋-emitter in a certain range, and when the doping concentration is extremely tow, the decrease of the width of p^＋-emitter can obtain a tow forward voltage drop. Thin emitter RSD chips were made by sintering AI on n-Si. The test result shows that their turn-on process is uniform and the voltage drop is 7.5 V when the peak conversion current is 5 500 A.
