Presented is design concept for key parameters o f the reverse conducting gate commutated thyristor (RC-GCT),such as the thickness and concentration of n-base region and the transparent anode region,and the wi dth o...Presented is design concept for key parameters o f the reverse conducting gate commutated thyristor (RC-GCT),such as the thickness and concentration of n-base region and the transparent anode region,and the wi dth of separation region between asymmetric GCT and PIN diode.A structure model of the RC-GCT is set up based on the design concept and its characteristics are analyzed.The simulation results show the design concept is reasonable.展开更多
Forced convective heat transfer in micro-rectangular channels can be described by a group of twodimensional differential equations. These equations take the conduction in microchannel wb along the direction of flow of...Forced convective heat transfer in micro-rectangular channels can be described by a group of twodimensional differential equations. These equations take the conduction in microchannel wb along the direction of flow of coolants into account, which are more generalized than those which neglect the conduction. For the same reason, they are suitable particularly for gases-cooled microchannels.With only numerical solution to the equations till today, an approximate analytic solution is derived here. From this solution, a rather simple formula can be introduced bober, by which the differences between considering the conduction and neglecting it are easily found. In addition, the rcasonableness of the classical fin method is also discussed. An experimental example of air-cooled microchannels is illustrated.展开更多
An analytical model for the subthreshold current of a strained-Si metal-oxide-semiconductor field-effect transistor (MOSFET) is developed by solving the two-dimensional (2D) Poisson equation and the conventional drift...An analytical model for the subthreshold current of a strained-Si metal-oxide-semiconductor field-effect transistor (MOSFET) is developed by solving the two-dimensional (2D) Poisson equation and the conventional drift-diffusion theory. Model verification is carried out using the 2D device simulator ISE. Good agreement is obtained between the model's calculations and the simulated results. By analyzing the model, the dependence of current on the strained-Si layer strain, doping concentration, source/drain junction depths and substrate voltage is studied. This subthreshold current model provides valuable information for strained-Si MOSFET design.展开更多
文摘Presented is design concept for key parameters o f the reverse conducting gate commutated thyristor (RC-GCT),such as the thickness and concentration of n-base region and the transparent anode region,and the wi dth of separation region between asymmetric GCT and PIN diode.A structure model of the RC-GCT is set up based on the design concept and its characteristics are analyzed.The simulation results show the design concept is reasonable.
文摘Forced convective heat transfer in micro-rectangular channels can be described by a group of twodimensional differential equations. These equations take the conduction in microchannel wb along the direction of flow of coolants into account, which are more generalized than those which neglect the conduction. For the same reason, they are suitable particularly for gases-cooled microchannels.With only numerical solution to the equations till today, an approximate analytic solution is derived here. From this solution, a rather simple formula can be introduced bober, by which the differences between considering the conduction and neglecting it are easily found. In addition, the rcasonableness of the classical fin method is also discussed. An experimental example of air-cooled microchannels is illustrated.
基金supported by the National Ministries and Commissions (Grant Nos.51308040203 and 6139801)the Fundamental Research Funds for the Central Universities (Grant Nos.72105499 and 72104089)the Natural Science Basic Research Plan in Shaanxi Province of China (Grant No.2010JQ8008)
文摘An analytical model for the subthreshold current of a strained-Si metal-oxide-semiconductor field-effect transistor (MOSFET) is developed by solving the two-dimensional (2D) Poisson equation and the conventional drift-diffusion theory. Model verification is carried out using the 2D device simulator ISE. Good agreement is obtained between the model's calculations and the simulated results. By analyzing the model, the dependence of current on the strained-Si layer strain, doping concentration, source/drain junction depths and substrate voltage is studied. This subthreshold current model provides valuable information for strained-Si MOSFET design.
