Presented is design concept for key parameters o f the reverse conducting gate commutated thyristor (RC-GCT),such as the thickness and concentration of n-base region and the transparent anode region,and the wi dth o...Presented is design concept for key parameters o f the reverse conducting gate commutated thyristor (RC-GCT),such as the thickness and concentration of n-base region and the transparent anode region,and the wi dth of separation region between asymmetric GCT and PIN diode.A structure model of the RC-GCT is set up based on the design concept and its characteristics are analyzed.The simulation results show the design concept is reasonable.展开更多
文摘Presented is design concept for key parameters o f the reverse conducting gate commutated thyristor (RC-GCT),such as the thickness and concentration of n-base region and the transparent anode region,and the wi dth of separation region between asymmetric GCT and PIN diode.A structure model of the RC-GCT is set up based on the design concept and its characteristics are analyzed.The simulation results show the design concept is reasonable.
