Aluminum parts will possess improved corro sion resistance and conductivity by chemical conductive anodi zing, which also can prevent electromagnetic interfere on elec tronic fixing with aluminum. Particular introduct...Aluminum parts will possess improved corro sion resistance and conductivity by chemical conductive anodi zing, which also can prevent electromagnetic interfere on elec tronic fixing with aluminum. Particular introduction was presented including process and formula of chemical conductive anodizing, components and effect of oxidation solution, forming mechanism of conductive oxidation film, preparation and maintain of chemi cal oxidation solution, effects of operation conditions on the con ductive film, pretreatment and aftertreatment, as well as trouble shooting method. Also the conductive, anticorrosive and coating properties were discussed.展开更多
Aluminum parts will possess improved corrosion resistance and conductivity by chemical conductive oxidation , which also can prevent electromagnetic interfere on electronic fixing with aluminum. Particular introductio...Aluminum parts will possess improved corrosion resistance and conductivity by chemical conductive oxidation , which also can prevent electromagnetic interfere on electronic fixing with aluminum. Particular introduction was presented including process and formula of chemical conductive oxidation, components and effect of oxidation solution, forming mechanism of conductive oxidation film, preparation and maintain of chemical oxidation solution, effects of operation conditions on the conductive film, pretreatment and aftertreatment, as well as trouble shooting method. Also the conductive, anticorrosive and coating properties were discussed.展开更多
According to the configuration,mixed-conducting membranes are classified as symmetric membranes and asymmetric membranes consisting of a thin dense layer and a porous support.In this study,these two kinds of SrCo0.4Fe...According to the configuration,mixed-conducting membranes are classified as symmetric membranes and asymmetric membranes consisting of a thin dense layer and a porous support.In this study,these two kinds of SrCo0.4Fe0.5Zr0.1O3-δ oxide-based membranes were systematically compared in terms of oxygen permeability and chemical stability,and their differences were elucidated by means of the theoretical calculation.For the oxygen permeability,the asymmetric membrane was greater than the symmetric membrane due to the significant decrease of bulk diffusion resistance in the thin dense layer of the asymmetric membrane.In regard to the chemical stability,the increase of oxygen partial pressure on the asymmetric membrane surface at CH4 side produced the stable time of over 1032h in partial oxidation of methane at 1123K,while the symmetric membrane was only of 528h.This study demonstrated that the asymmetric membrane was a promising geometrical configuration for the practical application.展开更多
The synthesis and transport properties of the Li6La3BiSnO1212 solid electrolyte by a solid-state reaction were reported. The condition to synthesize the Li6La3BiSnO1212 is 785 °C for 36 h in air. The refined latt...The synthesis and transport properties of the Li6La3BiSnO1212 solid electrolyte by a solid-state reaction were reported. The condition to synthesize the Li6La3BiSnO1212 is 785 °C for 36 h in air. The refined lattice constant of Li6La3 BiSnO1212 is 13.007A. Qualitative phase analysis by X-ray powder diffraction patterns combined with the Rietveld method reveals garnet type compounds as major phases. The Li-ion conductivity of the prepared Li6La3BiSnO12 is 0.85×10^-4 S/cm at 22 °C, which is comparable with that of the Li5La3Bi2O12. The Li6La3BiSnO1212 compounds are chemically stable against Li CoO2 which is widely used as cathode material up to 700 °C but not against the Li Mn2O4 if the temperature is higher than 550 °C. The Li6La3 BiSnO1212 exhibits higher chemical stability than Li5La3Bi2O12, which is due to Sn substitution for Bi.展开更多
The device performance of CdS/CdTe solar cells largely depends on not only the back ohmic contact, but also the conformality of Cd S window layer coating. In order to reduce the light absorption loss in Cd S, the Cd S...The device performance of CdS/CdTe solar cells largely depends on not only the back ohmic contact, but also the conformality of Cd S window layer coating. In order to reduce the light absorption loss in Cd S, the Cd S thickness is usually less than 100 nm. However, pinholes in Cd S and non-conformal coverage of Cd S on transparent conducting oxide layer will cause shunting thus leading to device performance degradation and failure. In this paper, low-temperature and low-cost fabrication methods, i.e., chemical bath deposition and electrochemical deposition, were used to deposit Cd S and Cd Te, respectively. It was found that the yield of device was around 20 % due to shunting. In order to alleviate this problem, a compact layer of TiO2 was inserted between the fluorine-doped tin oxide and Cd S as a buffer layer. The thickness effect of TiO2 was studied and showed that devices with thin(20 nm thickness) TiO2 performed better than the counterparts with thick layers. It was discovered that device yield improved to 80 % and stability in air substantially improved with TiO2 layer.展开更多
文摘Aluminum parts will possess improved corro sion resistance and conductivity by chemical conductive anodi zing, which also can prevent electromagnetic interfere on elec tronic fixing with aluminum. Particular introduction was presented including process and formula of chemical conductive anodizing, components and effect of oxidation solution, forming mechanism of conductive oxidation film, preparation and maintain of chemi cal oxidation solution, effects of operation conditions on the con ductive film, pretreatment and aftertreatment, as well as trouble shooting method. Also the conductive, anticorrosive and coating properties were discussed.
文摘Aluminum parts will possess improved corrosion resistance and conductivity by chemical conductive oxidation , which also can prevent electromagnetic interfere on electronic fixing with aluminum. Particular introduction was presented including process and formula of chemical conductive oxidation, components and effect of oxidation solution, forming mechanism of conductive oxidation film, preparation and maintain of chemical oxidation solution, effects of operation conditions on the conductive film, pretreatment and aftertreatment, as well as trouble shooting method. Also the conductive, anticorrosive and coating properties were discussed.
基金Supported by the National Basic Research Program of China （2009CB623406）, the National Natural Science Foundation of China （20636020）, the National High Technology Research and Development Program of China （2006AA030204） and the Specialized Research Fund for the Doctoral Program of Higher Education of China （20060291003）.
文摘According to the configuration,mixed-conducting membranes are classified as symmetric membranes and asymmetric membranes consisting of a thin dense layer and a porous support.In this study,these two kinds of SrCo0.4Fe0.5Zr0.1O3-δ oxide-based membranes were systematically compared in terms of oxygen permeability and chemical stability,and their differences were elucidated by means of the theoretical calculation.For the oxygen permeability,the asymmetric membrane was greater than the symmetric membrane due to the significant decrease of bulk diffusion resistance in the thin dense layer of the asymmetric membrane.In regard to the chemical stability,the increase of oxygen partial pressure on the asymmetric membrane surface at CH4 side produced the stable time of over 1032h in partial oxidation of methane at 1123K,while the symmetric membrane was only of 528h.This study demonstrated that the asymmetric membrane was a promising geometrical configuration for the practical application.
基金Project(51372278)supported by the National Natural Science Foundation of ChinaProject(2010RS4015)supported by the Natural Science Foundation of Hunan Province,China+1 种基金Project(2014ejing004)supported by the Hunan Intellectual Property Bureau,ChinaProject(CSUZC2014020)supported by the Open-End Fund for the Valuable and Precision Instruments of Central South University,China
文摘The synthesis and transport properties of the Li6La3BiSnO1212 solid electrolyte by a solid-state reaction were reported. The condition to synthesize the Li6La3BiSnO1212 is 785 °C for 36 h in air. The refined lattice constant of Li6La3 BiSnO1212 is 13.007A. Qualitative phase analysis by X-ray powder diffraction patterns combined with the Rietveld method reveals garnet type compounds as major phases. The Li-ion conductivity of the prepared Li6La3BiSnO12 is 0.85×10^-4 S/cm at 22 °C, which is comparable with that of the Li5La3Bi2O12. The Li6La3BiSnO1212 compounds are chemically stable against Li CoO2 which is widely used as cathode material up to 700 °C but not against the Li Mn2O4 if the temperature is higher than 550 °C. The Li6La3 BiSnO1212 exhibits higher chemical stability than Li5La3Bi2O12, which is due to Sn substitution for Bi.
基金supported by Hong Kong Innovation Technology Commission project(ITS/117/13)Hong Kong Research Grants Council project(612113)+1 种基金Fundamental Research Project of Shenzhen Science & Technology Foundation(JCYJ20130402164725025)the International Collaboration Project of Shenzhen Science & Technology Foundation(GJHZ20130417170946221)
文摘The device performance of CdS/CdTe solar cells largely depends on not only the back ohmic contact, but also the conformality of Cd S window layer coating. In order to reduce the light absorption loss in Cd S, the Cd S thickness is usually less than 100 nm. However, pinholes in Cd S and non-conformal coverage of Cd S on transparent conducting oxide layer will cause shunting thus leading to device performance degradation and failure. In this paper, low-temperature and low-cost fabrication methods, i.e., chemical bath deposition and electrochemical deposition, were used to deposit Cd S and Cd Te, respectively. It was found that the yield of device was around 20 % due to shunting. In order to alleviate this problem, a compact layer of TiO2 was inserted between the fluorine-doped tin oxide and Cd S as a buffer layer. The thickness effect of TiO2 was studied and showed that devices with thin(20 nm thickness) TiO2 performed better than the counterparts with thick layers. It was discovered that device yield improved to 80 % and stability in air substantially improved with TiO2 layer.
