A novel burning technique for making a semiconducting single-walled carbon nanotubes （SWNTs） transistor assembled by the dielectrophoretic force was suggested. The fabrication process consisted of two steps. First, ...A novel burning technique for making a semiconducting single-walled carbon nanotubes （SWNTs） transistor assembled by the dielectrophoretic force was suggested. The fabrication process consisted of two steps. First, to align and attach a bundle of SWNTs between the source and drain, the alternating （AC） voltage was applied to the electrodes. When a bundle of SWNTs was connected between two electrodes, some of metallic nanotubes and semi-conducing nanotubes existed together. The second step is to burn the metallic SWNTS by applying the voltage between two electrodes. With increasing the voltage, more current flowed through the metallic SWNTs, thus, the metallic SWNTs burnt earlier than the semiconducting one. This technique enables to obtain only semi-conducting SWNTs connection in the transistor. Through the 1--V characteristic graph, the moment of metallic SWNTs burning and the characteristic of semi-conducing nanotubes were verified.展开更多
Therapeutic endoscopic retrograde cholangiopancreatography (ERCP) is the mainstay treatment for bile duct disease. The procedure is difficult per se, especially when a side-viewing duodenoscope is used, and when the p...Therapeutic endoscopic retrograde cholangiopancreatography (ERCP) is the mainstay treatment for bile duct disease. The procedure is difficult per se, especially when a side-viewing duodenoscope is used, and when the patient has altered anatomical features, such as colonic interposition. Currently, there is no consensus on the standard approach for therapeutic ERCP in patients with total esophagectomy and colonic interposition. We describe a novel treatment design that involves the use of a side-viewing duodenoscope to perform therapeutic ERCP in patients with total esophagectomy and colonic interposition. A gastroscope was initially introduced into the interposed colon and a radio-opaque standard guidewire was advanced to a distance beyond the papilla of Vater, before the gastroscope was withdrawn. A sideviewing duodenoscope was then introduced along the guidewire under fluoroscopic guidance. After cannulation into the papilla of Vater, endoscopic retrograde chol-angiography (ERC) revealed a filling defect (maximum diameter: 15 cm) at the distal portion of the common bile duct (CBD). This defect was determined to be a stone, which was successfully retrieved by a Dormia basket after complete sphincterotomy. With this treatment design, it is possible to perform therapeutic ERCP in patients with colonic interposition, thereby precluding the need for percutaneous drainage or surgery.展开更多
Si/SiGe P-channel Metal-Oxide-Semiconductor Field Effect Transistor (PMOSFET) using P+ (phosphor ion) implantation technology is successfully fabricated. P+ implantation into SiGe virtual substrate induces a narrow de...Si/SiGe P-channel Metal-Oxide-Semiconductor Field Effect Transistor (PMOSFET) using P+ (phosphor ion) implantation technology is successfully fabricated. P+ implantation into SiGe virtual substrate induces a narrow defect region slightly below the SiGe/Si interface,which gives rise to strongly enhanced strain relaxation of SiGe virtual substrate. X-Ray Diffraction (XRD) tests show that the degree of relaxation of SiGe layer is 96% while 85% before implantation. After annealed,the sample appeared free of Threading Dislocation densities (TDs) within the SiGe layer to the limit of Trans-mission Electron Microscopy (TEM) analysis. Atomic Force Microscope (AFM) test of strained Si channel surface shows that Root Mean Square (RMS) is 1.1nm. The Direct Current (DC) characters measured by HP 4155B indicate that the maximum saturated transconductance is twice bigger than that of bulk Si PMOSFET.展开更多
Here we report a simple and scalable method to fabricate high performance thin-film field-effect transistors(FETs) with high yield based on chemically functionalized single-walled carbon nanotubes(SWNTs) by organic ra...Here we report a simple and scalable method to fabricate high performance thin-film field-effect transistors(FETs) with high yield based on chemically functionalized single-walled carbon nanotubes(SWNTs) by organic radical initiators.The UV-Vis-NIR spectra,Raman spectra and electrical characterization demonstrated that metallic species in CoMoCat 65 and HiPco SWNTs could be effectively eliminated after reaction with some organic radical initiators.The effects of the substrate properties on the electrical properties of FET devices were investigated,and the results showed that the electrical properties of FET devices fabricated on high hydrophobic substrates were better than those on low hydrophobic substrates.Furthermore,it was found that FET devices based on 1,1'-azobis(cyanocyclohexane)(ACN)-modified CoMoCat 65 SWNTs exhibited more excellent electrical performance with effective mobility of ～11.8 cm2/Vs and on/off ratio of ～2×105 as compared with benzoyl peroxide(BPO)-modified CoMoCat 65 SWNTs and lauoryl peroxideand(LPO)-modified HiPco SWNTs,likely due to the introduction of the electron-withdrawing groups(CN group) on the SWNT surface.This method does not require nontrivial reaction conditions or complicated purification after reaction,therefore promising low-cost production of high-performance devices for macroelectronics.展开更多
基金Project (2010-0008-276) supported for two years by Pusan National University Research GrantNCRC(National Core Research Center) through the National Research Foundation of Korea funded by the Ministry of Education, Science and TechnologyPusan National University Research Grant, 2009
文摘A novel burning technique for making a semiconducting single-walled carbon nanotubes （SWNTs） transistor assembled by the dielectrophoretic force was suggested. The fabrication process consisted of two steps. First, to align and attach a bundle of SWNTs between the source and drain, the alternating （AC） voltage was applied to the electrodes. When a bundle of SWNTs was connected between two electrodes, some of metallic nanotubes and semi-conducing nanotubes existed together. The second step is to burn the metallic SWNTS by applying the voltage between two electrodes. With increasing the voltage, more current flowed through the metallic SWNTs, thus, the metallic SWNTs burnt earlier than the semiconducting one. This technique enables to obtain only semi-conducting SWNTs connection in the transistor. Through the 1--V characteristic graph, the moment of metallic SWNTs burning and the characteristic of semi-conducing nanotubes were verified.
文摘Therapeutic endoscopic retrograde cholangiopancreatography (ERCP) is the mainstay treatment for bile duct disease. The procedure is difficult per se, especially when a side-viewing duodenoscope is used, and when the patient has altered anatomical features, such as colonic interposition. Currently, there is no consensus on the standard approach for therapeutic ERCP in patients with total esophagectomy and colonic interposition. We describe a novel treatment design that involves the use of a side-viewing duodenoscope to perform therapeutic ERCP in patients with total esophagectomy and colonic interposition. A gastroscope was initially introduced into the interposed colon and a radio-opaque standard guidewire was advanced to a distance beyond the papilla of Vater, before the gastroscope was withdrawn. A sideviewing duodenoscope was then introduced along the guidewire under fluoroscopic guidance. After cannulation into the papilla of Vater, endoscopic retrograde chol-angiography (ERC) revealed a filling defect (maximum diameter: 15 cm) at the distal portion of the common bile duct (CBD). This defect was determined to be a stone, which was successfully retrieved by a Dormia basket after complete sphincterotomy. With this treatment design, it is possible to perform therapeutic ERCP in patients with colonic interposition, thereby precluding the need for percutaneous drainage or surgery.
基金Supported by the Funds of National Key Laboratory of Analog IC (2000JS09.3.1.DZ02).
文摘Si/SiGe P-channel Metal-Oxide-Semiconductor Field Effect Transistor (PMOSFET) using P+ (phosphor ion) implantation technology is successfully fabricated. P+ implantation into SiGe virtual substrate induces a narrow defect region slightly below the SiGe/Si interface,which gives rise to strongly enhanced strain relaxation of SiGe virtual substrate. X-Ray Diffraction (XRD) tests show that the degree of relaxation of SiGe layer is 96% while 85% before implantation. After annealed,the sample appeared free of Threading Dislocation densities (TDs) within the SiGe layer to the limit of Trans-mission Electron Microscopy (TEM) analysis. Atomic Force Microscope (AFM) test of strained Si channel surface shows that Root Mean Square (RMS) is 1.1nm. The Direct Current (DC) characters measured by HP 4155B indicate that the maximum saturated transconductance is twice bigger than that of bulk Si PMOSFET.
基金supported by the Scientific Research Fund of Hunan Provincial Education Department(09B084)the Opening Project of Key Laboratory of Photochemical Conversion and Optoelectronic Materials,TIPC, Chinese Academy of Sciences(PCOM201114)
文摘Here we report a simple and scalable method to fabricate high performance thin-film field-effect transistors(FETs) with high yield based on chemically functionalized single-walled carbon nanotubes(SWNTs) by organic radical initiators.The UV-Vis-NIR spectra,Raman spectra and electrical characterization demonstrated that metallic species in CoMoCat 65 and HiPco SWNTs could be effectively eliminated after reaction with some organic radical initiators.The effects of the substrate properties on the electrical properties of FET devices were investigated,and the results showed that the electrical properties of FET devices fabricated on high hydrophobic substrates were better than those on low hydrophobic substrates.Furthermore,it was found that FET devices based on 1,1'-azobis(cyanocyclohexane)(ACN)-modified CoMoCat 65 SWNTs exhibited more excellent electrical performance with effective mobility of ～11.8 cm2/Vs and on/off ratio of ～2×105 as compared with benzoyl peroxide(BPO)-modified CoMoCat 65 SWNTs and lauoryl peroxideand(LPO)-modified HiPco SWNTs,likely due to the introduction of the electron-withdrawing groups(CN group) on the SWNT surface.This method does not require nontrivial reaction conditions or complicated purification after reaction,therefore promising low-cost production of high-performance devices for macroelectronics.
