Major consideration dimensions for the physical layer design of wireless sensor network （WSN） nodes is analyzed by comparing different wireless communication approaches, diverse mature standards, important radio fre...Major consideration dimensions for the physical layer design of wireless sensor network （WSN） nodes is analyzed by comparing different wireless communication approaches, diverse mature standards, important radio frequency （RF） parameters and various microcontroller unit （MCU） solutions. An implementation of the WSN node is presented with experimental results and a novel ＂one processor working at two frequencies＂ energy saving strategy. The lifetime estimation issue is analyzed with consideration to the periodical listen required by common WSN media access control （MAC） algorithms. It can be concluded that the startup time of the RF which determines the best sleep time ratio and the shortest backoff slot time of MAC, the RF frequency and modulation methods which determinate the RX and TX current, and the overall energy consumption of the dual frequency MCU SOC （ system on chip） are the most essential factors for the WSN node physical layer design.展开更多
Al-doped ZnO(AZO)thin films were deposited on glass substrates by rf-sputtering at room temperature.The effects of substrate rotation speed(ωS)on the morphological,structural,optical and electrical properties were in...Al-doped ZnO(AZO)thin films were deposited on glass substrates by rf-sputtering at room temperature.The effects of substrate rotation speed(ωS)on the morphological,structural,optical and electrical properties were investigated.SEM transversal images show that the substrate rotation produces dense columnar structures which were found to be better defined under substrate rotation.AFM images show that the surface particles of the samples formed under substrate rotation are smaller and denser than those of a stationary one,leading to smaller grain sizes.XRD results show that all films have hexagonal wurtzite structure and preferred c-axis orientation with a tensile stress along the c-axis.The average optical transmittance was above90%in UV-Vis region.The lowest resistivity value(8.5×10?3Ω·cm)was achieved atωS=0r/min,with a carrier concentration of1.8×1020cm?3,and a Hall mobility of4.19cm2/(V·s).For all other samples,the substrate rotation induced changes in the carrier concentration and Hall mobility which resulted in the increasing of electrical resistivity.These results indicate that the morphology,structure,optical and electrical properties of the AZO thin films are strongly affected by the substrate rotation speed.展开更多
Amorphous silicon nitride films were deposited by low-frequency plasma-enhanced chemical vapor deposition（LF-PECVD） using silane and nitrogen as precursors. Characteristics such as deposition rate, surface morpholog...Amorphous silicon nitride films were deposited by low-frequency plasma-enhanced chemical vapor deposition（LF-PECVD） using silane and nitrogen as precursors. Characteristics such as deposition rate, surface morphology, and chemical composition were measured by spectroscopic ellipsometry（SE）, atomic force mieroscope（AFM） and x-ray photoelectron spectroscopy（XPS）. It was shown that amorphous silicon nitride film could be prepared by LF-PECVD with good uniformity and even surface. The XPS result indicated that a small quantity of oxygen was involved in the sample, which was discussed in this paper.展开更多
基金The National High Technology Research and Deve-lopment Program of China (863Program) (No.2003AA143040).
文摘Major consideration dimensions for the physical layer design of wireless sensor network （WSN） nodes is analyzed by comparing different wireless communication approaches, diverse mature standards, important radio frequency （RF） parameters and various microcontroller unit （MCU） solutions. An implementation of the WSN node is presented with experimental results and a novel ＂one processor working at two frequencies＂ energy saving strategy. The lifetime estimation issue is analyzed with consideration to the periodical listen required by common WSN media access control （MAC） algorithms. It can be concluded that the startup time of the RF which determines the best sleep time ratio and the shortest backoff slot time of MAC, the RF frequency and modulation methods which determinate the RX and TX current, and the overall energy consumption of the dual frequency MCU SOC （ system on chip） are the most essential factors for the WSN node physical layer design.
文摘Al-doped ZnO(AZO)thin films were deposited on glass substrates by rf-sputtering at room temperature.The effects of substrate rotation speed(ωS)on the morphological,structural,optical and electrical properties were investigated.SEM transversal images show that the substrate rotation produces dense columnar structures which were found to be better defined under substrate rotation.AFM images show that the surface particles of the samples formed under substrate rotation are smaller and denser than those of a stationary one,leading to smaller grain sizes.XRD results show that all films have hexagonal wurtzite structure and preferred c-axis orientation with a tensile stress along the c-axis.The average optical transmittance was above90%in UV-Vis region.The lowest resistivity value(8.5×10?3Ω·cm)was achieved atωS=0r/min,with a carrier concentration of1.8×1020cm?3,and a Hall mobility of4.19cm2/(V·s).For all other samples,the substrate rotation induced changes in the carrier concentration and Hall mobility which resulted in the increasing of electrical resistivity.These results indicate that the morphology,structure,optical and electrical properties of the AZO thin films are strongly affected by the substrate rotation speed.
文摘Amorphous silicon nitride films were deposited by low-frequency plasma-enhanced chemical vapor deposition（LF-PECVD） using silane and nitrogen as precursors. Characteristics such as deposition rate, surface morphology, and chemical composition were measured by spectroscopic ellipsometry（SE）, atomic force mieroscope（AFM） and x-ray photoelectron spectroscopy（XPS）. It was shown that amorphous silicon nitride film could be prepared by LF-PECVD with good uniformity and even surface. The XPS result indicated that a small quantity of oxygen was involved in the sample, which was discussed in this paper.
