ZnO films are deposited on glass slides by radio frequency(RF) magnetron sputtering under different powers. The polycrystal structures and surface morphologies of the film are investigated. The optical transmission sp...ZnO films are deposited on glass slides by radio frequency(RF) magnetron sputtering under different powers. The polycrystal structures and surface morphologies of the film are investigated. The optical transmission spectra for the ZnO films are measured within the range from 300 nm to 800 nm. The optical constants and thickness of the films are determined using a nonlinear programming method suggested by Birgin et al. The band gap of the film increases with reducing the nano-size of the film grains. The packing density of the films can be improved by reducing the RF power.展开更多
Tin-doped indium oxide （ITO） thin films were prepared using conventional radio frequency （RF） planar magnetron sputtering equipped with IR irradiation using a ceramic target of In2O3/SnO2 with a mass ratio of 1∶1...Tin-doped indium oxide （ITO） thin films were prepared using conventional radio frequency （RF） planar magnetron sputtering equipped with IR irradiation using a ceramic target of In2O3/SnO2 with a mass ratio of 1∶1 at various IR irradiation temperatures T1 （from room temperature to 400?℃）. The refractive index,deposited ratio,and resistivity are functions of the sputtering Ar gas pressure. The microstructure of ITO thin films is related to IR T1,the crystalline seeds appear at T1=300?℃,and the films are amorphous at the temperature ranging from 27?℃ to 400?℃. AFM investigation shows that the roughness value of peak-valley of ITO thin film （R p-v ） and the surface microstructure of ITO thin films have a close relation with T1. The IR irradiation results in a widening value of band-gap energy due to Burstein-Moss effect and the maximum visible transmittance shifts toward a shorter wavelength along with a decrease in the film’s refractive index. The plasma wavelength and the refractive index of ITO thin films are relative to the T1. XPS investigation shows that the photoelectrolytic properties can be deteriorated by the sub-oxides. The deterioration can be decreased by increasing the oxygen flow rate （fo2）,and the mole ratio of Sn/In in the samples reduces with an increase in fo2.展开更多
基金the Ministry of Science and Technology of China(2002CB211807)Science and Technology Project of FujianProvince of China(2005 H043)Science and Technology Novel Project of Xiamen University(XMKJCX20051025)
文摘ZnO films are deposited on glass slides by radio frequency(RF) magnetron sputtering under different powers. The polycrystal structures and surface morphologies of the film are investigated. The optical transmission spectra for the ZnO films are measured within the range from 300 nm to 800 nm. The optical constants and thickness of the films are determined using a nonlinear programming method suggested by Birgin et al. The band gap of the film increases with reducing the nano-size of the film grains. The packing density of the films can be improved by reducing the RF power.
文摘Tin-doped indium oxide （ITO） thin films were prepared using conventional radio frequency （RF） planar magnetron sputtering equipped with IR irradiation using a ceramic target of In2O3/SnO2 with a mass ratio of 1∶1 at various IR irradiation temperatures T1 （from room temperature to 400?℃）. The refractive index,deposited ratio,and resistivity are functions of the sputtering Ar gas pressure. The microstructure of ITO thin films is related to IR T1,the crystalline seeds appear at T1=300?℃,and the films are amorphous at the temperature ranging from 27?℃ to 400?℃. AFM investigation shows that the roughness value of peak-valley of ITO thin film （R p-v ） and the surface microstructure of ITO thin films have a close relation with T1. The IR irradiation results in a widening value of band-gap energy due to Burstein-Moss effect and the maximum visible transmittance shifts toward a shorter wavelength along with a decrease in the film’s refractive index. The plasma wavelength and the refractive index of ITO thin films are relative to the T1. XPS investigation shows that the photoelectrolytic properties can be deteriorated by the sub-oxides. The deterioration can be decreased by increasing the oxygen flow rate （fo2）,and the mole ratio of Sn/In in the samples reduces with an increase in fo2.
