Hot carrier induced (HCI) degradation of surface channel n MOSFETs with different oxide thicknesses is investigated under maximum substrate current condition.Results show that the key parameters m and n of H...Hot carrier induced (HCI) degradation of surface channel n MOSFETs with different oxide thicknesses is investigated under maximum substrate current condition.Results show that the key parameters m and n of Hu's lifetime prediction model have a close relationship with oxide thickness.Furthermore,a linear relationship is found between m and n .Based on this result,the lifetime prediction model can be expended to the device with thinner oxides.展开更多
Based on the characteristics of the top coal thickness of the fully mechanized caving in special thick coal seam,the long distance of coal gangue caving,as well as the different sizes of the coal gangue broken fragmen...Based on the characteristics of the top coal thickness of the fully mechanized caving in special thick coal seam,the long distance of coal gangue caving,as well as the different sizes of the coal gangue broken fragment dimension and spatial variation of drop flow,this paper uses laboratory dispersion simulation experiment and theoretical analysis to study the arch structure effect and its influence rule on the top coal loss in the process of coal gangue flow.Research shows that in the process of coal gangue flow,arch structure can be formed in three types:the lower arch structure,middle arch structure,and upper arch structure.Moreover,the arch structure has the characteristics of dynamic random arch,the formation probability of dynamic random arch with different layers is not the same,dynamic random arch caused the reduction of the top coal fluency;analyzing the dynamic random arch formation mechanism,influencing factors,and the conditions of instability;the formation probability of the lower arch structure is the highest,the whole coal arch and the coal gangue arch structure has the greatest impact on top coal loss.Therefore,to prevent or reduce the formation of lower whole coal arch structure,the lower coal gangue arch structure and the middle whole coal arch structure is the key to reduce the top coal loss.The research conclusion provides theoretical basis for the further improvement of the top coal recovery rate of the fully mechanized caving in extra thick coal seam.展开更多
This work focuses on the characteristics of the Rayleigh-Taylor Instability （RTI） of the interfaces formed by two semi-infinitely distributed fluids and one interlayer. In consideration of the coupling effects betwe...This work focuses on the characteristics of the Rayleigh-Taylor Instability （RTI） of the interfaces formed by two semi-infinitely distributed fluids and one interlayer. In consideration of the coupling effects between the interfaces, the expression of the growth rate is obtained. The result reveals that the instability growth rate depends on the density and thickness of the interlayer. It is found that /f the interlayer thickness is less than 0.6 times of the disturbing wavelength, the coupling effects should be considered.展开更多
Transistor size is constantly being reduced to improve performance as well as power consumption. For the channel length to be reduced, the corresponding gate dielectric thickness should also be reduced. Unfortunately,...Transistor size is constantly being reduced to improve performance as well as power consumption. For the channel length to be reduced, the corresponding gate dielectric thickness should also be reduced. Unfortunately, graphene devices are more complicated due to an extra capacitance called quantum capacitance （CQ） which limits the effective gate dielectric reduction. In this work, we analyzed the effect of CQ on device-scaling issues by extracting it from scaling of the channel length of devices. In contrast to previous reports for metal-insulator- metal structures, a practical device structure was used in conjunction with direct radio-frequency field-effect transistor measurements to describe the graphene channels. In order to precisely extract device parameters, we reassessed the equivalent circuit, and concluded that the on-state model should in fact be used. By careful consideration of the underlap region, our device modeling was shown to be in good agreement with the experimental data. CQ contributions to equivalent oxide thickness were analyzed in detail for varying impurity concentrations in graphene. Finally, we were able to demonstrate that despite contributions from CQ, graphene＇s high mobility and low-voltage operation allows for ~raphene channels suitable for next generation transistors.展开更多
文摘Hot carrier induced (HCI) degradation of surface channel n MOSFETs with different oxide thicknesses is investigated under maximum substrate current condition.Results show that the key parameters m and n of Hu's lifetime prediction model have a close relationship with oxide thickness.Furthermore,a linear relationship is found between m and n .Based on this result,the lifetime prediction model can be expended to the device with thinner oxides.
基金the Independent Research Subject of State Key Laboratory of Coal Resources and Mine Safety of China University of Mining and Technology (No.SKLCRSM12X03)the Scientific Research and Innovation Project for College Graduates in Jiangsu (No.CXZZ13_0947)+1 种基金Top-Notch Academic Programs of Jiangsu Higher Education Institutionsthe Priority Academic Development Program of Jiangsu Higher Education Institutions
文摘Based on the characteristics of the top coal thickness of the fully mechanized caving in special thick coal seam,the long distance of coal gangue caving,as well as the different sizes of the coal gangue broken fragment dimension and spatial variation of drop flow,this paper uses laboratory dispersion simulation experiment and theoretical analysis to study the arch structure effect and its influence rule on the top coal loss in the process of coal gangue flow.Research shows that in the process of coal gangue flow,arch structure can be formed in three types:the lower arch structure,middle arch structure,and upper arch structure.Moreover,the arch structure has the characteristics of dynamic random arch,the formation probability of dynamic random arch with different layers is not the same,dynamic random arch caused the reduction of the top coal fluency;analyzing the dynamic random arch formation mechanism,influencing factors,and the conditions of instability;the formation probability of the lower arch structure is the highest,the whole coal arch and the coal gangue arch structure has the greatest impact on top coal loss.Therefore,to prevent or reduce the formation of lower whole coal arch structure,the lower coal gangue arch structure and the middle whole coal arch structure is the key to reduce the top coal loss.The research conclusion provides theoretical basis for the further improvement of the top coal recovery rate of the fully mechanized caving in extra thick coal seam.
基金Supported by National Natural Science Foundation of China under Grant No.11074300National Basic Research Program of China under Grant No.2013CBA01504+1 种基金National Science and Technology Major Project of the Ministry of ScienceTechnology of China under Grant No.2011ZX05038-001
文摘This work focuses on the characteristics of the Rayleigh-Taylor Instability （RTI） of the interfaces formed by two semi-infinitely distributed fluids and one interlayer. In consideration of the coupling effects between the interfaces, the expression of the growth rate is obtained. The result reveals that the instability growth rate depends on the density and thickness of the interlayer. It is found that /f the interlayer thickness is less than 0.6 times of the disturbing wavelength, the coupling effects should be considered.
文摘Transistor size is constantly being reduced to improve performance as well as power consumption. For the channel length to be reduced, the corresponding gate dielectric thickness should also be reduced. Unfortunately, graphene devices are more complicated due to an extra capacitance called quantum capacitance （CQ） which limits the effective gate dielectric reduction. In this work, we analyzed the effect of CQ on device-scaling issues by extracting it from scaling of the channel length of devices. In contrast to previous reports for metal-insulator- metal structures, a practical device structure was used in conjunction with direct radio-frequency field-effect transistor measurements to describe the graphene channels. In order to precisely extract device parameters, we reassessed the equivalent circuit, and concluded that the on-state model should in fact be used. By careful consideration of the underlap region, our device modeling was shown to be in good agreement with the experimental data. CQ contributions to equivalent oxide thickness were analyzed in detail for varying impurity concentrations in graphene. Finally, we were able to demonstrate that despite contributions from CQ, graphene＇s high mobility and low-voltage operation allows for ~raphene channels suitable for next generation transistors.
