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A Frequency-Independent Equivalent Circuit for High-k Stacked Monolithic Transformers
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作者 夏峻 王志功 李伟 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2008年第8期1461-1464,共4页
A new 2-Π lumped element equivalent circuit model for high-k stacked on-chip transformers is proposed. The model parameters are extracted with high precision, mainly based on analytical methods. The developed model e... A new 2-Π lumped element equivalent circuit model for high-k stacked on-chip transformers is proposed. The model parameters are extracted with high precision, mainly based on analytical methods. The developed model enables fast and accurate time domain transient analysis and noise analysis in RFIC simulation since all elements in the model are fre- quency independent. The validity of the proposed model has been demonstrated by a fabricated monolithic stacked trans- former in TSMC's 0.13μm mixed-signal (MS)/RF CMOS' process. 展开更多
关键词 HIGH-K stacked on-chip transformer frequency-independent equivalent circuit
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A Planar InGaAs/InP Geiger Mode Avalanche Photodiode with Cascade Edge Breakdown Suppression
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作者 吴孟 林峰 +1 位作者 杨富华 曹延名 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2008年第9期1686-1691,共6页
A Geiger mode planar InGaAs/InP avalanche photodiode (APD) with a cascade peripheral junction structure to suppress edge breakdowns is designed by finite-element analysis. The photodiode breakdown voltage is reduced... A Geiger mode planar InGaAs/InP avalanche photodiode (APD) with a cascade peripheral junction structure to suppress edge breakdowns is designed by finite-element analysis. The photodiode breakdown voltage is reduced to 54.3V by controlling the central junction depth, while the electric field distribution along the device central axis is controlled by adjusting doping level and thickness of the lnP field control layer. Using a cascade junction structure at the periphery of the active area, premature edge breakdowns are effectively suppressed. The simulations show that the quadra-cascade structure is a good trade-off between suppression performance and fabrication complexity, with a reduced peak electric field of 5.2 × 10^5 kV/cm and a maximum hole ionization integral of 1. 201. Work presented in this paper provides an effective way to design high performance photon counting InGaAs/InP avalanche photodiodes. 展开更多
关键词 Geiger mode APD edge breakdown cascade junction breakdown voltage
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A case of intussuscepted Meckel’s diverticulum 被引量:2
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作者 Tae Hee Lee Jin-Oh Kim +5 位作者 Jae Joon Kim Seong Sook Hong So Young Jin Hyun Gun Kim Joo Young Cho Joon Seong Lee 《World Journal of Gastroenterology》 SCIE CAS CSCD 2009年第40期5109-5111,共3页
We report colonoscopic features of an intussuscepted Meckel's diverticulum, presenting with hematochezia. A 35-year-old woman presented to the emergency room with acute onset, transient, sharp, severe epi-gastric ... We report colonoscopic features of an intussuscepted Meckel's diverticulum, presenting with hematochezia. A 35-year-old woman presented to the emergency room with acute onset, transient, sharp, severe epi-gastric pain that began 6 h earlier. Colonoscopy re-vealed a reddish, soft, fi st-sized polypoid lesion in the terminal ileum. The lesion was misinterpreted as a hematoma by an inexperienced endoscopist. The pa-tient began to complain of intermittent, severe peri-umbilical pain following the colonoscopic examination. Subsequent computed tomography showed an enteric intussusception. An exploratory laparotomy revealed an intussuscepted Meckel's diverticulum, with trans-mural infarction. Colonoscopy was of little use in as-sessing the intussusception. However, colonoscopic examination may be performed initially, especially in an intussuscepted Meckel's diverticulum present-ing with hematochezia. Endoscopists should note the endoscopic features of an intussuscepted Meckel's diverticulum. 展开更多
关键词 COLONOSCOPY INTUSSUSCEPTION Meckel's diverticulum
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Electronic Properties in a Hierarchical Multilayer Structure
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作者 ZHUChen-Ping XIONGShi-Jie 《Communications in Theoretical Physics》 SCIE CAS CSCD 2001年第3期339-346,共8页
We investigate electronic properties of a hierarchical multilayer structure consisting of stacking of barriers and wells. The structure is formed in a sequence of generations, each of which is constructed with the sam... We investigate electronic properties of a hierarchical multilayer structure consisting of stacking of barriers and wells. The structure is formed in a sequence of generations, each of which is constructed with the same pattern but with the previous generation as the basic building blocks. We calculate the transmission spectrum which shows the multifractal behavior for systems with large generation index. From the analysis of the average resistivity and the multifractal structure of the wavefunctions, we show that there exist different types of states exhibiting extended, localized and intermediate characteristics. The degree of localization is sensitive to the variation of the structural parameters.Suggestion of the possible experimental realization is discussed. 展开更多
关键词 hierarchical structure MULTILAYER MULTIFRACTAL
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STRUCTURAL CHARACTERISTICS OF THE NIUSHOU MOUNTAIN AND ITS GEOLOGICAL SIGNIFICANCE IN CENTRAL NINGXIA
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作者 ZHANGJin MAZongjin +1 位作者 RENWenjun LEIYongliang 《Geotectonica et Metallogenia》 2003年第1期165-178,共14页
There are many thrust-related structures occurring in the Paleozoic strata of the Niushou Mountain in the central part of Ningxia Hui Autonomous Region. The fault-related folds are the typical structures in this area.... There are many thrust-related structures occurring in the Paleozoic strata of the Niushou Mountain in the central part of Ningxia Hui Autonomous Region. The fault-related folds are the typical structures in this area. Based on the analysis about these structures and their relationships, the processes by which these structures of the Miboshan Formation were formed are reconstructed, and the strata underwent about three stages of deformation: (1) horizontal shortening, (2) folding, and (3) thrusting. And the fact that the Niushou Mountain is the leading edge of an old thrust sheet was proved, the Niushou Mountain,the Daluo Mountain and the Xiaoluo Mountain together constitute the front part of this old thrust zone,so the Niushou Mountain and the Ordovician strata in the central and southern parts of Ningxia now are likely allochthons. In the period from middle Ordovician to Devonian, the areas of the central and southern Ningxia belonged to the back-arc foreland basin of North Qilianshan orogen, which was adjacent to the continent in the north. In the later part of the early Paleozoic period, the Niushou Mountain was formed after the closure of the back-arc foreland basin. 展开更多
关键词 the Niushou Mountain fault-related fold CLEAVAGE
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Perovskite-based tandem solar cells 被引量:5
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作者 Zhimin Fang Qiang Zeng +17 位作者 Chuantian Zuo Lixiu Zhang Hanrui Xiao Ming Cheng Feng Hao Qinye Bao Lixue Zhang Yongbo Yuan Wu-Qiang Wu Dewei Zhao Yuanhang Cheng Hairen Tan Zuo Xiao Shangfeng Yang Fangyang Liu Zhiwen Jin Jinding Yan Liming Ding 《Science Bulletin》 SCIE EI CSCD 2021年第6期621-636,M0004,共17页
The power conversion efficiency for single-junction solar cells is limited by the Shockley-Quiesser limit.An effective approach to realize high efficiency is to develop multi-junction cells.These years have witnessed ... The power conversion efficiency for single-junction solar cells is limited by the Shockley-Quiesser limit.An effective approach to realize high efficiency is to develop multi-junction cells.These years have witnessed the rapid development of organic–inorganic perovskite solar cells.The excellent optoelectronic properties and tunable bandgaps of perovskite materials make them potential candidates for developing tandem solar cells,by combining with silicon,Cu(In,Ga)Se_(2)and organic solar cells.In this review,we present the recent progress of perovskite-based tandem solar cells,including perovskite/silicon,perovskite/perovskite,perovskite/Cu(In,Ga)Se_(2),and perovskite/organic cells.Finally,the challenges and opportunities for perovskite-based tandem solar cells are discussed. 展开更多
关键词 Tandem solar cells PEROVSKITE SILICON CIGS ORGANIC
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