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中国传统艺术对现代包装设计的审美影响研究 被引量:29
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作者 黄强苓 《包装工程》 CAS CSCD 北大核心 2007年第2期162-164,共3页
现代包装设计是社会发展的必然产物,它是经过传统文化艺术浸润而发展起来的更具科学和审美意义的设计。文中对中国传统艺术的价值和审美意义,以及关系进行了较深入的探讨,对于现代包装艺术设计的民族风格和发展研究有一定的参考价值和... 现代包装设计是社会发展的必然产物,它是经过传统文化艺术浸润而发展起来的更具科学和审美意义的设计。文中对中国传统艺术的价值和审美意义,以及关系进行了较深入的探讨,对于现代包装艺术设计的民族风格和发展研究有一定的参考价值和作用。 展开更多
关键词 中国传统艺术 工艺关术 绘画 现代包装设计 审美
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Study on Processing Technology of Health Beverage Made from Artemisia Selengensis Turoz and Green Tea 被引量:1
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作者 吴存兵 吴君艳 +3 位作者 田林双 窦勇 李昱萱 彭芳琦 《Agricultural Science & Technology》 CAS 2014年第6期990-993,共4页
This study took Artemisia selengensis Turoz and green tea as primary materials and sugar, lemon acid potassium as supplementary materials to make compound health beverage.The main influence factors to the quality of t... This study took Artemisia selengensis Turoz and green tea as primary materials and sugar, lemon acid potassium as supplementary materials to make compound health beverage.The main influence factors to the quality of the compound beverage were investigated,such as addition amounts ofArtemisia selengensis juice, green tea juice,sugar and lemon acid.By orthogonal test ,the best formula of the compound health beverage is Artemisia selengensis juice 10 ml, green tea juice 200 ml, sugar 6 g and lemon acid 0.06 g. The optimum stabilizer of the beverage is CMC-Na with 0.03% amount. 展开更多
关键词 Artemisia selengensis turoz Green tea Compound beverage Process-ina technoloqy Main technique points
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SCDI Flash Memory Device Ⅱ:Experiments and Characteristics
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作者 欧文 钱鹤 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2004年第5期497-501,共5页
Step channel direct injection(SCDI) flash memory device is successfully achieved by 1 2μm CMOS technology,moreover good performance is obtained.At the bias condition of V g=6V, V d=5V,the programming speed ... Step channel direct injection(SCDI) flash memory device is successfully achieved by 1 2μm CMOS technology,moreover good performance is obtained.At the bias condition of V g=6V, V d=5V,the programming speed of SCDI device is 42μs.Under the condition of V g=-8V, V s=8V,the erasing speed is 24ms.Compared with the same size of conventional flash memory device whose corresponding parameters are 500μs and 24ms,respectively,the performance of SCDI device is remarkably improved.During manufacturing of SCDI device,the key technologies are to make the shallow step with appropriate depth and angle,along with eliminating the etch damage during the process of Si 3N 4 spacer. 展开更多
关键词 SCDI flash memory programming speed key technology
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