Device structure and fabrication process of SOI nMOSFET depleted partially are p roposed for multi-gigahertz RF applications.Many advanced techniques for deep submiron MOSFETs are incorporated into the proposed devic...Device structure and fabrication process of SOI nMOSFET depleted partially are p roposed for multi-gigahertz RF applications.Many advanced techniques for deep submiron MOSFETs are incorporated into the proposed device.Main steps and condit ions in process are given in details,with simulation and optimization by using t he process simulator,Tsuprem4.Experiment results of 0.25μm SOI RF nMOSFET are i n consistence with simulated ones,and excellent or acceptable parameters of devi ce performance are obtained for multi-gigahertz RF applications.展开更多
文摘Device structure and fabrication process of SOI nMOSFET depleted partially are p roposed for multi-gigahertz RF applications.Many advanced techniques for deep submiron MOSFETs are incorporated into the proposed device.Main steps and condit ions in process are given in details,with simulation and optimization by using t he process simulator,Tsuprem4.Experiment results of 0.25μm SOI RF nMOSFET are i n consistence with simulated ones,and excellent or acceptable parameters of devi ce performance are obtained for multi-gigahertz RF applications.
