The concepts of substrate eddy influence factor and distribution-effects-occurring frequency are presented. The effects of substrate resistivity and inductor spiral length on the substrate eddy and distribution effect...The concepts of substrate eddy influence factor and distribution-effects-occurring frequency are presented. The effects of substrate resistivity and inductor spiral length on the substrate eddy and distribution effects are captured. The substrate eddy influence factors of an inductor （6 turn, 3 060 μm in length） fabricated on low （ 1 Ω. cm） and high resistivity（ 1 000 Ω.cm） silicon substrates are 0. 3 and 0. 04, and the distribution-effects- occurring frequencies are 1.8 GHz and 14. 5 GHz, respectively. The measurement results show that the equivalent circuit model of the inductor on low resistivity silicon must take into consideration substrate eddy effects and distribution effects. However, the circuit model of the inductor on high resistivity silicon cannot take into account the substrate eddy effects and the distribution effects at the frequencies of interest. Its simple model shows agreement with the measurements, and the contrast is within 7%.展开更多
This paper, through the investigation and analysis of economic status, fashion art and consumption psychology in modem society, makes a research of formation background, style features and fashion reflection from mult...This paper, through the investigation and analysis of economic status, fashion art and consumption psychology in modem society, makes a research of formation background, style features and fashion reflection from multiple aspects. And from the perspective of artistic style and garment innovation design, it analyzes the artistic feature of new minimalism culture and style types of garment interlining art, forming systematic theoretical statement.展开更多
The elastic stress fields caused by a dislocation in GexSil~ epitaxial layer on Si substrate are investigated in this work. Based on the previous results in an anisotropic bimaterial system, the image method is furthe...The elastic stress fields caused by a dislocation in GexSil~ epitaxial layer on Si substrate are investigated in this work. Based on the previous results in an anisotropic bimaterial system, the image method is further developed to determine the stress field of a dislocation in the film-substrate system under coupled condition. The film-substrate system is firstly transformed into a bimaterial system by distributing image dislocation densities on the position of the free surface. Then, the unknown image dis- location densities are solved by using boundary conditions, i.e., traction free conditions on the free surface. Numerical simula- tion focuses on the Ge0.1Si0.9/Si film-substrate system. The effects of layer thickness, position of the dislocation and crystallo- graphic orientation on the stress fields are discussed. Results reveal that both the stresses σxx,σxz at the free surface and the stress o-σx, σyy, σyz on the interface are influenced by the layer thickness, but the former is stronger. In contrast to the weak de- pendence of stress field on the crystallographic orientation the stress field was strongly affected by dislocation position. The stress fields both in the film-substrate system and bimaterial system are plotted.展开更多
The effect of Ag nanoislands on the Raman of graphene was investigated in this work.Compared with that on the bare silicon wafer,Raman enhancement was observed in the graphene film that covered on Ag/Si surface with n...The effect of Ag nanoislands on the Raman of graphene was investigated in this work.Compared with that on the bare silicon wafer,Raman enhancement was observed in the graphene film that covered on Ag/Si surface with nanoscale Ag islands,which would be induced by the localized plasmon resonance in Ag nanostructures.The interaction between the graphene sheet and Ag/Si substrate was further studied.The peak shift and line shape of Raman spectroscopy indicated a nonuniform strain distribution in the Ag/Si supported graphene film.展开更多
基金The National Natural Science Foundation of China(No.60676043)the National High Technology Research and Development Program of China(863Program)(No.2007AA04Z328)
文摘The concepts of substrate eddy influence factor and distribution-effects-occurring frequency are presented. The effects of substrate resistivity and inductor spiral length on the substrate eddy and distribution effects are captured. The substrate eddy influence factors of an inductor （6 turn, 3 060 μm in length） fabricated on low （ 1 Ω. cm） and high resistivity（ 1 000 Ω.cm） silicon substrates are 0. 3 and 0. 04, and the distribution-effects- occurring frequencies are 1.8 GHz and 14. 5 GHz, respectively. The measurement results show that the equivalent circuit model of the inductor on low resistivity silicon must take into consideration substrate eddy effects and distribution effects. However, the circuit model of the inductor on high resistivity silicon cannot take into account the substrate eddy effects and the distribution effects at the frequencies of interest. Its simple model shows agreement with the measurements, and the contrast is within 7%.
文摘This paper, through the investigation and analysis of economic status, fashion art and consumption psychology in modem society, makes a research of formation background, style features and fashion reflection from multiple aspects. And from the perspective of artistic style and garment innovation design, it analyzes the artistic feature of new minimalism culture and style types of garment interlining art, forming systematic theoretical statement.
基金supported by the Science and Technology on Surface Physics and Chemistry Laboratory(Grant No.SPC201106)
文摘The elastic stress fields caused by a dislocation in GexSil~ epitaxial layer on Si substrate are investigated in this work. Based on the previous results in an anisotropic bimaterial system, the image method is further developed to determine the stress field of a dislocation in the film-substrate system under coupled condition. The film-substrate system is firstly transformed into a bimaterial system by distributing image dislocation densities on the position of the free surface. Then, the unknown image dis- location densities are solved by using boundary conditions, i.e., traction free conditions on the free surface. Numerical simula- tion focuses on the Ge0.1Si0.9/Si film-substrate system. The effects of layer thickness, position of the dislocation and crystallo- graphic orientation on the stress fields are discussed. Results reveal that both the stresses σxx,σxz at the free surface and the stress o-σx, σyy, σyz on the interface are influenced by the layer thickness, but the former is stronger. In contrast to the weak de- pendence of stress field on the crystallographic orientation the stress field was strongly affected by dislocation position. The stress fields both in the film-substrate system and bimaterial system are plotted.
基金supported by the National Natural Science Foundation of China(Grant Nos.91123009,11104229 and 61227009)Xiamen University Start-up Funds
文摘The effect of Ag nanoislands on the Raman of graphene was investigated in this work.Compared with that on the bare silicon wafer,Raman enhancement was observed in the graphene film that covered on Ag/Si surface with nanoscale Ag islands,which would be induced by the localized plasmon resonance in Ag nanostructures.The interaction between the graphene sheet and Ag/Si substrate was further studied.The peak shift and line shape of Raman spectroscopy indicated a nonuniform strain distribution in the Ag/Si supported graphene film.
