A low voltage bandgap reference with curvature compensation is presented. Using current mode structure, the proposed bandgap circuit has a minimum voltage of 900mV. Compensated through the VEB linearization technique,...A low voltage bandgap reference with curvature compensation is presented. Using current mode structure, the proposed bandgap circuit has a minimum voltage of 900mV. Compensated through the VEB linearization technique, this bandgap reference can reach a temperature coefficient of 10ppmFC from 0 to 150℃. With a 1.1V supply voltage,the supply current is 43μA and the PSRR is 55dB at DC frequency. This bandgap reference has been verified in a UMC 0.18μm mixed mode CMOS technology and occupies 0. 186mm^2 of chip area.展开更多
A bandgap voltage reference is presented with a piecewise linear compensating circuit in order to reduce the temperature coefficient.The basic principle is to divide the whole operating temperature range into some su...A bandgap voltage reference is presented with a piecewise linear compensating circuit in order to reduce the temperature coefficient.The basic principle is to divide the whole operating temperature range into some sub ranges.At different temperature sub ranges the bandgap reference can be compensated by different linear functions.Since the temperature sub range is much narrower than the whole range,the compensation error can be reduced significantly.Theoretically,the precision can be improved unlimitedly if the sub ranges are narrow enough.In the given example,with only three temperature sub ranges,the temperature coefficient of a conventional bandgap reference drops from 1 5×10 -5 /℃ to 2×10 -6 /℃ over the -40℃ to 120℃ temperature range.展开更多
A new method,namely multiple point curvature compensation （MPCC）,is proposed for the design of a bandgap reference,and its design principles, theoretical derivation, and one feasible circuitry implementation are pre...A new method,namely multiple point curvature compensation （MPCC）,is proposed for the design of a bandgap reference,and its design principles, theoretical derivation, and one feasible circuitry implementation are presented. Being different from traditional techniques, this idea focuses on finding multiple temperatures in the whole range at which the first order derivatives of the output reference voltage equal zero. In this way, the curve of the output reference voltage is flattened and a better effect of curvature compensation is achieved. The circuitry is simulated in ST Microelectronics 0. 18μm CMOS technology, and the simulated result shows that the average temperature coefficient is only 1ppm/℃ in the range from - 40 to 125℃.展开更多
An on-chip voltage reference with a wide supply voltage range is required by some applications,especially that of power management （PM） controller chips applied to telecommunication, automotive, lighting equipment, ...An on-chip voltage reference with a wide supply voltage range is required by some applications,especially that of power management （PM） controller chips applied to telecommunication, automotive, lighting equipment, etc., when high power supply voltage is needed. Accordingly,a new bandgap reference with a wide supply voltage range is proposed. Due to the improved structure,it features a high power supply rejection ratio （PSRR） and high temperature stability. In addition, an auxiliary micro-power reference is introduced to support the sleep mode of the PM chip and reduce its standby power consumption. The auxiliary reference provides bias currents in normal mode and a 1.28V reference voltage in sleep mode to replace the main reference and save power. Simulation results show that the reference provides a reference volt- age of 1.27V,which has a 3.5mV drift over the temperature range from -20 to 120~C and 56t^V deviation over a supply voltage range from 3 to 40V. The PSRR is higher than 100dB for frequency below 10kHz. The circuit was completed in 1.5tzm BCD （Bipolar-CMOS-DMOS） technology. The experimental results show that all main expectations are achieved.展开更多
On the basis of mutual compensation of mobility and threshold voltage temperature effects, a stable CMOS band-gap voltage reference circuit was designed and fabricated in CSMC-HJ 0.6 μm CMOS technology. Operating fro...On the basis of mutual compensation of mobility and threshold voltage temperature effects, a stable CMOS band-gap voltage reference circuit was designed and fabricated in CSMC-HJ 0.6 μm CMOS technology. Operating from 0 to 85 ℃ under a supply voltage ranging from 4.5 to 5.5 V, the voltage reference circuit offers an output reference voltage ranging from 1.122 to 1.176 V and a voltage variation less than ±3.70%. The chip size including bonding pads is only 0.4 mm×0.4 mm and the power dissipation falls inside the scope of 28.3 to 48.8 mW operating at a supply voltage of 4.5 to 5.5 V.展开更多
Two novel poly[(3-alkylthiophene-2,5-diyl)-(benzylidenequinomethane-2,5-diyl)s] derivatives, poly[ (3-butylthiophene-2,5-diyl)-( p-N,N-dimethylamino) benzylidenequinomethane-2,5-diyl) ] ( PBTDMABQ) and poly [( 3-octyl...Two novel poly[(3-alkylthiophene-2,5-diyl)-(benzylidenequinomethane-2,5-diyl)s] derivatives, poly[ (3-butylthiophene-2,5-diyl)-( p-N,N-dimethylamino) benzylidenequinomethane-2,5-diyl) ] ( PBTDMABQ) and poly [( 3-octylthiophene2,5-diyl) -(p-N, N-dimethylamino ) benzylidenequinomethane-2, 5-diyl)] (POTDMABQ), were synthesized.The band gaps of the two polymers are calculated as 1. 75 eV for PBTDMABQ and 1. 69 eV for POTDMABQ,respectively. The homogenous films of the two polymers were prepared and their third-ordernonlinear optical properties were studied by the backward degenerate four-wave mixing at 532 nm. Byusing the relative measurement technique, the third-order nonlinear optical susceptibilities ofPBTDMABQ and POTDMABQ are calculated as 5. 62 X 10^(-9) and 1. 22 X 10^(-8) ESU, respectively. It isfound that substituted alky groups have strong effects on the band gap and nonlinear opticalproperties of the two polymers. The relatively big third-order nonlinear optical susceptibilitiesand small band gap of POTDMABQ resulted mainly from the longer alkyl with strong electron-donatingability can enhance the delocation degree of conjugated π electronics.展开更多
The frequency in middle of magnon energy band in a five-layer ferromagnetic superlattice is studied by using the linear spin-wave approach and Green＇s function technique. It is found that four energy gaps and corresp...The frequency in middle of magnon energy band in a five-layer ferromagnetic superlattice is studied by using the linear spin-wave approach and Green＇s function technique. It is found that four energy gaps and corresponding four frequencie in middle of energy gaps exist in the magnon band along Kx direction perpendicular to the superlattice plane. The spin quantum numbers and the interlayer exchange couplings all affect the four frequencies in middle of the energy gaps. When all interlayer exchange couplings are same, the effect of spin quantum numbers on the frequency wg1 in middle of the energy gap Δw12 is complicated, and the frequency wg1 depends on the match of spin quantum numbers in each layer. Meanwhile, the frequencies wg2, wg3, and wg4 in middle of other energy gaps increase monotonously with increasing spin quantum numbers. When the spin quantum numbers in each layer are same, the frequencies wg1, wg2, wg3, and wg4 all increase monotonously with increasing interlayer exchange couplings.展开更多
Piezoresistive effect of carbon nanotube films was investigated by athree-point bending test. Carbon nanotubes were synthesized by hot filament chemical vapordeposition. The experimental results showed that the carbon...Piezoresistive effect of carbon nanotube films was investigated by athree-point bending test. Carbon nanotubes were synthesized by hot filament chemical vapordeposition. The experimental results showed that the carbon nanotubes have a striking piezoresistiveeffect. The relative resistance was changed from 0 to 10.5 X 10^(-2) and 3. 25 X 10^(-2) for dopedand undoped films respectively at room temperature when the microstrain under stress from 0 to 500.The gauge factors for doped and undoped carbon nanotube films under 500 microstrain were about 220and 67 at room temperature, respectively, exceeding that of polycrystalline silicon (30) at 35℃.The origin of the resistance changes in the films may be attributed to a strain-induced change inthe band gap for the doped tubes and the defects for the undoped tubes.展开更多
The rational design of polymer acceptors with strong and broad absorption is critical to improve photovoltaic performance.In this work,a new polymer acceptor PY9-T based on heptacyclic benzotriazole(Y9-C16)as a buildi...The rational design of polymer acceptors with strong and broad absorption is critical to improve photovoltaic performance.In this work,a new polymer acceptor PY9-T based on heptacyclic benzotriazole(Y9-C16)as a building block and thiophene unit as the linking unit was synthesized,which exhibited a low bandgap(1.37 eV)and a high extinction coefficient of the neat film(1.44×10^(5) cm^(−1)).When PY9-T was blended with the wide bandgap polymer donor PBDB-T,the all-polymer solar cells(APSCs)showed a high power conversion efficiency(PCE)of 10.45%with both high open circuit voltage of 0.881 V and short-circuit current density of 19.82 mA/cm^(2).In addition,APSCs based on PY9-T show good thermal stability,as evidenced by slight changes morphologies when annealed at 100℃.These results suggest that Y9-C16 provides a new building block to develop efficient and stable polymer acceptors.展开更多
A natural polymer composite is the main choice to replace composites from petroleum derivatives. A composite is formed in two or more phases （i.e., organic and inorganic phases）. A composite that has specified energ...A natural polymer composite is the main choice to replace composites from petroleum derivatives. A composite is formed in two or more phases （i.e., organic and inorganic phases）. A composite that has specified energy band gap, electrical conductivity, and tensile strength can be used as semiconductor material. The objective of this research was to study the effect of production methods, concentration and type of metal oxide filler （TiO2, A1203, Fe203, and ZnO） on structure, energy band gap, and electrical conductivity of composites. Composites were prepared using a melt intercalation process with tapioca as a matrix and addition of 1%, 3%, 5o and 7% filler concentrations, and sonication processing time in interval of 40, 50, and 60 min. Structure and morphology of the composite were analyzed using FT-IR, XRD, SEM, and TEM. UV-vis was used to measure the energy band gap while electrical conductivity was measured using a potentiostat through determination of resistivity. In addition, tensile strength and elongation were measured by ASTM 822-02. The energy band gap of the tapioca/metal oxide composite was between 4.9-1.62 eV. Electrical conductivity showed a percolation thresholds for concentrations of 3%-5% TiO2, A1203, and Fe203 and 7% ZnO. The tapioca/ZnO composite with 5% ZnO and 50 min of processing time showed a maximum tensile strength of 74.84 kgf/cm2, 6% elongation, 1.27 - 10^-7ohm^-1cm^-1 electrical conductivity and energy band gap of 3.27 eV. The characteristics described show that the tapioca/metal oxide composite can be used as a semiconductor material.展开更多
A high stabilized low dropout(LDO) voltage regulator fabricated for GPS radio frequency(RF) chip in SMIC 0.18μm CMOS technology is presented.The LDO mainly consists of bandgap reference,error amplifier,resistive feed...A high stabilized low dropout(LDO) voltage regulator fabricated for GPS radio frequency(RF) chip in SMIC 0.18μm CMOS technology is presented.The LDO mainly consists of bandgap reference,error amplifier,resistive feedback network and AC current path.A fast current path is added to improve the performance of LDO's transient response.Equivalent series resistance(ESR)compensation and internal Miller compensation are used to constitute the frequency compensation.The measurement results of the transient response of the output voltage show that it can recover within 2μs with less than 120 mV ripple when the load current is changed from 0 to 100 mA.The total quiescent current of LDO and bandgap reference(without load) is 260 μA.展开更多
The air-void size distribution and number of air voids are crucial characteristics of air-entrainment. The standard spacing factor L is based on the Powers model, in which considerable simplifications are assumed. A b...The air-void size distribution and number of air voids are crucial characteristics of air-entrainment. The standard spacing factor L is based on the Powers model, in which considerable simplifications are assumed. A better solution is provided by the Philleo factor, which determines the percentage content of protected paste located at a distance S from the edge of the nearest air void. Developing the concept put forward by Philleo, a method of determining the volume of protected paste on the basis of images generated from the numerical model of concrete grain structure including layout of aggregate-paste-air, is proposed. It is the ratio of the volume of the paste protected by air voids to the total paste volume. The PPV （protected paste volume） index accounts not only for sizes and number of air voids, but also for the role of aggregate particles in the placement of these pores, which is often disregarded in analyses. The PPV results obtained from image analysis were compared with standard spacing factor L and with the parameter developed by Philleo. The analyses conducted by the authors shows that accounting for aggregate grains in calculations substantially affects the assessment of the quality of the air-pore structure.展开更多
A piecewise curvature-corrected bandgap reference （BGR） with negative feedback is proposed. It features employing a temperature-dependent resistor ratio technique to get a piecewise corrected current, which corrects...A piecewise curvature-corrected bandgap reference （BGR） with negative feedback is proposed. It features employing a temperature-dependent resistor ratio technique to get a piecewise corrected current, which corrects the nonlinear temperature dependence of the first-order BGR. The piecewise corrected current generator also forms negative feedback to improve the line regulation and power supply rejection （PSR）. Measurement results show the proposed BGR achieves a maximum temperature coefficient （TC） of 21.2ppm/℃ without trimming in the temperature range of - 50-125℃ and a PSR of - 60dB at 2.6V supply voltage. The line regulation is 0.8mV/V in the supply range of 2.6-5.6V. It is successfully implemented in an SMIC 0.35μm 5V n-well digital CMOS process with the effective chip area of 0.04mm^2 and power con- sumption of 0.18mW. The reference is applied in a 3,5V optical receiver trans-impedance amplifier.展开更多
The first mixed alkali-metal gallium iodate-fluoride,namely,LiGaF2(IO3)2,was successfully obtained under hydrothermal conditions.The structure of LiGaF2(IO3)2 features a novel two-dimensional(2D)[GaF2(IO3)2]layer comp...The first mixed alkali-metal gallium iodate-fluoride,namely,LiGaF2(IO3)2,was successfully obtained under hydrothermal conditions.The structure of LiGaF2(IO3)2 features a novel two-dimensional(2D)[GaF2(IO3)2]layer composed of[Ga2F4(IO3)6]4 dimers further bridged by(IO3)groups.LiGaF2(IO3)2 exhibits a wide band gap of 4.33 eV,corresponding to the ultraviolet(UV)absorption edge of 230 nm.Calculations of linear optical property revealed that LiGaF2(IO3)2 has a remarkably large birefringence of 0.181@1064 nm and 0.206@532 nm,indicating that it is a potential birefringent material that could be used from visible to UV region.This study provides a new method for the future discovery of promising optical crystals.展开更多
文摘A low voltage bandgap reference with curvature compensation is presented. Using current mode structure, the proposed bandgap circuit has a minimum voltage of 900mV. Compensated through the VEB linearization technique, this bandgap reference can reach a temperature coefficient of 10ppmFC from 0 to 150℃. With a 1.1V supply voltage,the supply current is 43μA and the PSRR is 55dB at DC frequency. This bandgap reference has been verified in a UMC 0.18μm mixed mode CMOS technology and occupies 0. 186mm^2 of chip area.
文摘A bandgap voltage reference is presented with a piecewise linear compensating circuit in order to reduce the temperature coefficient.The basic principle is to divide the whole operating temperature range into some sub ranges.At different temperature sub ranges the bandgap reference can be compensated by different linear functions.Since the temperature sub range is much narrower than the whole range,the compensation error can be reduced significantly.Theoretically,the precision can be improved unlimitedly if the sub ranges are narrow enough.In the given example,with only three temperature sub ranges,the temperature coefficient of a conventional bandgap reference drops from 1 5×10 -5 /℃ to 2×10 -6 /℃ over the -40℃ to 120℃ temperature range.
文摘A new method,namely multiple point curvature compensation （MPCC）,is proposed for the design of a bandgap reference,and its design principles, theoretical derivation, and one feasible circuitry implementation are presented. Being different from traditional techniques, this idea focuses on finding multiple temperatures in the whole range at which the first order derivatives of the output reference voltage equal zero. In this way, the curve of the output reference voltage is flattened and a better effect of curvature compensation is achieved. The circuitry is simulated in ST Microelectronics 0. 18μm CMOS technology, and the simulated result shows that the average temperature coefficient is only 1ppm/℃ in the range from - 40 to 125℃.
文摘An on-chip voltage reference with a wide supply voltage range is required by some applications,especially that of power management （PM） controller chips applied to telecommunication, automotive, lighting equipment, etc., when high power supply voltage is needed. Accordingly,a new bandgap reference with a wide supply voltage range is proposed. Due to the improved structure,it features a high power supply rejection ratio （PSRR） and high temperature stability. In addition, an auxiliary micro-power reference is introduced to support the sleep mode of the PM chip and reduce its standby power consumption. The auxiliary reference provides bias currents in normal mode and a 1.28V reference voltage in sleep mode to replace the main reference and save power. Simulation results show that the reference provides a reference volt- age of 1.27V,which has a 3.5mV drift over the temperature range from -20 to 120~C and 56t^V deviation over a supply voltage range from 3 to 40V. The PSRR is higher than 100dB for frequency below 10kHz. The circuit was completed in 1.5tzm BCD （Bipolar-CMOS-DMOS） technology. The experimental results show that all main expectations are achieved.
文摘On the basis of mutual compensation of mobility and threshold voltage temperature effects, a stable CMOS band-gap voltage reference circuit was designed and fabricated in CSMC-HJ 0.6 μm CMOS technology. Operating from 0 to 85 ℃ under a supply voltage ranging from 4.5 to 5.5 V, the voltage reference circuit offers an output reference voltage ranging from 1.122 to 1.176 V and a voltage variation less than ±3.70%. The chip size including bonding pads is only 0.4 mm×0.4 mm and the power dissipation falls inside the scope of 28.3 to 48.8 mW operating at a supply voltage of 4.5 to 5.5 V.
基金National Natural Science Foundation of China (60277002)
文摘Two novel poly[(3-alkylthiophene-2,5-diyl)-(benzylidenequinomethane-2,5-diyl)s] derivatives, poly[ (3-butylthiophene-2,5-diyl)-( p-N,N-dimethylamino) benzylidenequinomethane-2,5-diyl) ] ( PBTDMABQ) and poly [( 3-octylthiophene2,5-diyl) -(p-N, N-dimethylamino ) benzylidenequinomethane-2, 5-diyl)] (POTDMABQ), were synthesized.The band gaps of the two polymers are calculated as 1. 75 eV for PBTDMABQ and 1. 69 eV for POTDMABQ,respectively. The homogenous films of the two polymers were prepared and their third-ordernonlinear optical properties were studied by the backward degenerate four-wave mixing at 532 nm. Byusing the relative measurement technique, the third-order nonlinear optical susceptibilities ofPBTDMABQ and POTDMABQ are calculated as 5. 62 X 10^(-9) and 1. 22 X 10^(-8) ESU, respectively. It isfound that substituted alky groups have strong effects on the band gap and nonlinear opticalproperties of the two polymers. The relatively big third-order nonlinear optical susceptibilitiesand small band gap of POTDMABQ resulted mainly from the longer alkyl with strong electron-donatingability can enhance the delocation degree of conjugated π electronics.
基金Supported by the Natural Science Foundation of Liaoning Province of China under Grant No. 20062040
文摘The frequency in middle of magnon energy band in a five-layer ferromagnetic superlattice is studied by using the linear spin-wave approach and Green＇s function technique. It is found that four energy gaps and corresponding four frequencie in middle of energy gaps exist in the magnon band along Kx direction perpendicular to the superlattice plane. The spin quantum numbers and the interlayer exchange couplings all affect the four frequencies in middle of the energy gaps. When all interlayer exchange couplings are same, the effect of spin quantum numbers on the frequency wg1 in middle of the energy gap Δw12 is complicated, and the frequency wg1 depends on the match of spin quantum numbers in each layer. Meanwhile, the frequencies wg2, wg3, and wg4 in middle of other energy gaps increase monotonously with increasing spin quantum numbers. When the spin quantum numbers in each layer are same, the frequencies wg1, wg2, wg3, and wg4 all increase monotonously with increasing interlayer exchange couplings.
基金National Natural Science Foundation of China (60376032)
文摘Piezoresistive effect of carbon nanotube films was investigated by athree-point bending test. Carbon nanotubes were synthesized by hot filament chemical vapordeposition. The experimental results showed that the carbon nanotubes have a striking piezoresistiveeffect. The relative resistance was changed from 0 to 10.5 X 10^(-2) and 3. 25 X 10^(-2) for dopedand undoped films respectively at room temperature when the microstrain under stress from 0 to 500.The gauge factors for doped and undoped carbon nanotube films under 500 microstrain were about 220and 67 at room temperature, respectively, exceeding that of polycrystalline silicon (30) at 35℃.The origin of the resistance changes in the films may be attributed to a strain-induced change inthe band gap for the doped tubes and the defects for the undoped tubes.
基金Project(21875286)supported by the National Natural Science Foundation of China。
文摘The rational design of polymer acceptors with strong and broad absorption is critical to improve photovoltaic performance.In this work,a new polymer acceptor PY9-T based on heptacyclic benzotriazole(Y9-C16)as a building block and thiophene unit as the linking unit was synthesized,which exhibited a low bandgap(1.37 eV)and a high extinction coefficient of the neat film(1.44×10^(5) cm^(−1)).When PY9-T was blended with the wide bandgap polymer donor PBDB-T,the all-polymer solar cells(APSCs)showed a high power conversion efficiency(PCE)of 10.45%with both high open circuit voltage of 0.881 V and short-circuit current density of 19.82 mA/cm^(2).In addition,APSCs based on PY9-T show good thermal stability,as evidenced by slight changes morphologies when annealed at 100℃.These results suggest that Y9-C16 provides a new building block to develop efficient and stable polymer acceptors.
文摘A natural polymer composite is the main choice to replace composites from petroleum derivatives. A composite is formed in two or more phases （i.e., organic and inorganic phases）. A composite that has specified energy band gap, electrical conductivity, and tensile strength can be used as semiconductor material. The objective of this research was to study the effect of production methods, concentration and type of metal oxide filler （TiO2, A1203, Fe203, and ZnO） on structure, energy band gap, and electrical conductivity of composites. Composites were prepared using a melt intercalation process with tapioca as a matrix and addition of 1%, 3%, 5o and 7% filler concentrations, and sonication processing time in interval of 40, 50, and 60 min. Structure and morphology of the composite were analyzed using FT-IR, XRD, SEM, and TEM. UV-vis was used to measure the energy band gap while electrical conductivity was measured using a potentiostat through determination of resistivity. In addition, tensile strength and elongation were measured by ASTM 822-02. The energy band gap of the tapioca/metal oxide composite was between 4.9-1.62 eV. Electrical conductivity showed a percolation thresholds for concentrations of 3%-5% TiO2, A1203, and Fe203 and 7% ZnO. The tapioca/ZnO composite with 5% ZnO and 50 min of processing time showed a maximum tensile strength of 74.84 kgf/cm2, 6% elongation, 1.27 - 10^-7ohm^-1cm^-1 electrical conductivity and energy band gap of 3.27 eV. The characteristics described show that the tapioca/metal oxide composite can be used as a semiconductor material.
基金Supported by the Communication Systems Project of Jiangsu Department(No.JHB04010)
文摘A high stabilized low dropout(LDO) voltage regulator fabricated for GPS radio frequency(RF) chip in SMIC 0.18μm CMOS technology is presented.The LDO mainly consists of bandgap reference,error amplifier,resistive feedback network and AC current path.A fast current path is added to improve the performance of LDO's transient response.Equivalent series resistance(ESR)compensation and internal Miller compensation are used to constitute the frequency compensation.The measurement results of the transient response of the output voltage show that it can recover within 2μs with less than 120 mV ripple when the load current is changed from 0 to 100 mA.The total quiescent current of LDO and bandgap reference(without load) is 260 μA.
文摘The air-void size distribution and number of air voids are crucial characteristics of air-entrainment. The standard spacing factor L is based on the Powers model, in which considerable simplifications are assumed. A better solution is provided by the Philleo factor, which determines the percentage content of protected paste located at a distance S from the edge of the nearest air void. Developing the concept put forward by Philleo, a method of determining the volume of protected paste on the basis of images generated from the numerical model of concrete grain structure including layout of aggregate-paste-air, is proposed. It is the ratio of the volume of the paste protected by air voids to the total paste volume. The PPV （protected paste volume） index accounts not only for sizes and number of air voids, but also for the role of aggregate particles in the placement of these pores, which is often disregarded in analyses. The PPV results obtained from image analysis were compared with standard spacing factor L and with the parameter developed by Philleo. The analyses conducted by the authors shows that accounting for aggregate grains in calculations substantially affects the assessment of the quality of the air-pore structure.
文摘A piecewise curvature-corrected bandgap reference （BGR） with negative feedback is proposed. It features employing a temperature-dependent resistor ratio technique to get a piecewise corrected current, which corrects the nonlinear temperature dependence of the first-order BGR. The piecewise corrected current generator also forms negative feedback to improve the line regulation and power supply rejection （PSR）. Measurement results show the proposed BGR achieves a maximum temperature coefficient （TC） of 21.2ppm/℃ without trimming in the temperature range of - 50-125℃ and a PSR of - 60dB at 2.6V supply voltage. The line regulation is 0.8mV/V in the supply range of 2.6-5.6V. It is successfully implemented in an SMIC 0.35μm 5V n-well digital CMOS process with the effective chip area of 0.04mm^2 and power con- sumption of 0.18mW. The reference is applied in a 3,5V optical receiver trans-impedance amplifier.
基金the National Natural Science Foundation of China(21875248,21921001,and 21975256)the Strategic Priority Research Program of the Chinese Academy of Sciences(XDB20000000)the 100 Talents Project of Fujian Province。
文摘The first mixed alkali-metal gallium iodate-fluoride,namely,LiGaF2(IO3)2,was successfully obtained under hydrothermal conditions.The structure of LiGaF2(IO3)2 features a novel two-dimensional(2D)[GaF2(IO3)2]layer composed of[Ga2F4(IO3)6]4 dimers further bridged by(IO3)groups.LiGaF2(IO3)2 exhibits a wide band gap of 4.33 eV,corresponding to the ultraviolet(UV)absorption edge of 230 nm.Calculations of linear optical property revealed that LiGaF2(IO3)2 has a remarkably large birefringence of 0.181@1064 nm and 0.206@532 nm,indicating that it is a potential birefringent material that could be used from visible to UV region.This study provides a new method for the future discovery of promising optical crystals.
