Si(001)衬底上APCVD生长3C-SiC薄膜的微孪晶及含量

利用X射线双晶多功能四圆衍射仪 ,对在Si( 0 0 1 )衬底上使用常压化学气相方法 (APCVD)生长的 3C SiC进行了微孪晶的分析 .Φ扫描证明了 3C SiC外延生长于Si衬底上 ,生长的取向关系为 :( 0 0 1 ) 3C SiC//( 0 0 1 ) Si,[1 1 1 ]3C SiC//[1 1 1 ]Si. 3C SiC的{1 1 1 }极图在χ =1 5 .8°出现了新的衍射 ,采用六角相 {1 0 1 0 }晶面的极图以及孪晶SiC( 0 0 2 )的倒易空间Mapping分析了χ=1 5 .8°处产生的衍射为 3C SiC的孪晶所致 ,并利用ω扫描估算了孪晶的含量约为 1 % .

Anomalous moire pattern of graphene investigated by scanning tunneling microscopy： Evidence of graphene growth on oxidized Cu（111）

The growth of graphene on oriented （111） copper films has been achieved by atmospheric pressure chemical vapor deposition. The structural properties of as-produced graphene have been investigated by scanning tunneling microscopy. Anomalous moir6 superstructures composed of well-defined linear periodic modulations have been observed. We report here on comprehensive and detailed studies of these particular moir6 patterns present in the graphene topography revealing that, in certain conditions, the growth can occur on the oxygen-induced reconstructed copper surface and not directly on the oriented （111） copper film as expected.