High power and high-slope efficiency 650nm band real-refractive-index ridge w aveguide AlGaInP laser diodes with compressive strained MQW active layer are for med by pure Ar ion beam etching process.Symmetric laser me...High power and high-slope efficiency 650nm band real-refractive-index ridge w aveguide AlGaInP laser diodes with compressive strained MQW active layer are for med by pure Ar ion beam etching process.Symmetric laser mesas with high perpendi cularity,which are impossible to obtain by traditional wet etching method due to the use of a 15°-misoriented substrate,are obtained by this dry etching metho d.Laser diodes with 4μm wide,600μm long and 10%/90% coat are fabricated.Th e typical threshold current of these devices is 46mA at room temperature,and a s table fundamental-mode operation over 40mW is obtained.Very high slope efficien cy of 1.4W/A at 10mW and 1.1W/A at 40mW are realized.展开更多
This paper focuses on how to reduce the gate leakage current caused by plasma dry etching. X-ray photoelectron spectroscopy （XPS） is employed to measure the AlGaN surface before and after etching. N vacancies are in...This paper focuses on how to reduce the gate leakage current caused by plasma dry etching. X-ray photoelectron spectroscopy （XPS） is employed to measure the AlGaN surface before and after etching. N vacancies are introduced, which cause that gate currents are not dominated by the thermal electron emission mechanism. N vacancies enhance the tunneling effect and reduce the Schottky barrier height as n-type doped in the etched AIGaN surface.A post-gate process for AlGaN/GaN HEMTs,annealing at 400℃ in a nitrogen ambient for 10min is introduced. After annealing, Ni atoms of gate metal reacted with Ga atoms of AlGaN, and N vacancies were reduced. The reverse leakage decreased by three orders of magnitude,the forward turn-on voltage increased and the ideality factor reduced from 3.07 to 2.08.展开更多
In this work, a smart strategy that combines three-way high performance liquid chromatography-diode array detection(HPLCDAD) data with second-order calibration method based on alternating trilinear decomposition(ATLD)...In this work, a smart strategy that combines three-way high performance liquid chromatography-diode array detection(HPLCDAD) data with second-order calibration method based on alternating trilinear decomposition(ATLD) algorithm was proposed for simultaneous determination of eleven non-steroidal anti-inflammatory drugs(NSAIDs) illegally added into Chinese patent drugs and health products. All target analytes were rapidly eluted out within 14.5 min under a simple gradient elution. With the aid of the prominent "second-order advantage" of the ATLD algorithm, three HPLC problems, i.e. peak overlaps, unknown interferences and baseline drift, could be mathematically calibrated, and pure signals of target analytes could be extracted out from heavy-interference but information-rich HPLC-DAD data. The average spiked recoveries for all target analytes were in the range of 95.9%–106.4% with standard deviations lower than 7.5%. Validation parameters including sensitivity(SEN), selectivity(SEL), limit of detection(LOD), limit of quantitation(LOQ) and precisions of intra-day and inter-day were calculated to validate the accuracy of the proposed method, quantitative results were further confirmed by the classic HPLC method, which proved that chemometrics-assisted HPLC-DAD analytical strategy was highly efficient, accurate and green for drug-abuse monitoring of NSAIDs in Chinese patent drugs and health products.展开更多
文摘High power and high-slope efficiency 650nm band real-refractive-index ridge w aveguide AlGaInP laser diodes with compressive strained MQW active layer are for med by pure Ar ion beam etching process.Symmetric laser mesas with high perpendi cularity,which are impossible to obtain by traditional wet etching method due to the use of a 15°-misoriented substrate,are obtained by this dry etching metho d.Laser diodes with 4μm wide,600μm long and 10%/90% coat are fabricated.Th e typical threshold current of these devices is 46mA at room temperature,and a s table fundamental-mode operation over 40mW is obtained.Very high slope efficien cy of 1.4W/A at 10mW and 1.1W/A at 40mW are realized.
基金supported by the State Key Development Programfor Basic Research of China(No.2002CB311903)the Key Innovation Program of the Chinese Academy of Sciences(No.KGCX2-S W-107)~~
文摘This paper focuses on how to reduce the gate leakage current caused by plasma dry etching. X-ray photoelectron spectroscopy （XPS） is employed to measure the AlGaN surface before and after etching. N vacancies are introduced, which cause that gate currents are not dominated by the thermal electron emission mechanism. N vacancies enhance the tunneling effect and reduce the Schottky barrier height as n-type doped in the etched AIGaN surface.A post-gate process for AlGaN/GaN HEMTs,annealing at 400℃ in a nitrogen ambient for 10min is introduced. After annealing, Ni atoms of gate metal reacted with Ga atoms of AlGaN, and N vacancies were reduced. The reverse leakage decreased by three orders of magnitude,the forward turn-on voltage increased and the ideality factor reduced from 3.07 to 2.08.
基金supported by the National Natural Science Foundation of China (21575039, 21775039, 21521063)
文摘In this work, a smart strategy that combines three-way high performance liquid chromatography-diode array detection(HPLCDAD) data with second-order calibration method based on alternating trilinear decomposition(ATLD) algorithm was proposed for simultaneous determination of eleven non-steroidal anti-inflammatory drugs(NSAIDs) illegally added into Chinese patent drugs and health products. All target analytes were rapidly eluted out within 14.5 min under a simple gradient elution. With the aid of the prominent "second-order advantage" of the ATLD algorithm, three HPLC problems, i.e. peak overlaps, unknown interferences and baseline drift, could be mathematically calibrated, and pure signals of target analytes could be extracted out from heavy-interference but information-rich HPLC-DAD data. The average spiked recoveries for all target analytes were in the range of 95.9%–106.4% with standard deviations lower than 7.5%. Validation parameters including sensitivity(SEN), selectivity(SEL), limit of detection(LOD), limit of quantitation(LOQ) and precisions of intra-day and inter-day were calculated to validate the accuracy of the proposed method, quantitative results were further confirmed by the classic HPLC method, which proved that chemometrics-assisted HPLC-DAD analytical strategy was highly efficient, accurate and green for drug-abuse monitoring of NSAIDs in Chinese patent drugs and health products.
