High power and high-slope efficiency 650nm band real-refractive-index ridge w aveguide AlGaInP laser diodes with compressive strained MQW active layer are for med by pure Ar ion beam etching process.Symmetric laser me...High power and high-slope efficiency 650nm band real-refractive-index ridge w aveguide AlGaInP laser diodes with compressive strained MQW active layer are for med by pure Ar ion beam etching process.Symmetric laser mesas with high perpendi cularity,which are impossible to obtain by traditional wet etching method due to the use of a 15°-misoriented substrate,are obtained by this dry etching metho d.Laser diodes with 4μm wide,600μm long and 10%/90% coat are fabricated.Th e typical threshold current of these devices is 46mA at room temperature,and a s table fundamental-mode operation over 40mW is obtained.Very high slope efficien cy of 1.4W/A at 10mW and 1.1W/A at 40mW are realized.展开更多
This paper focuses on how to reduce the gate leakage current caused by plasma dry etching. X-ray photoelectron spectroscopy （XPS） is employed to measure the AlGaN surface before and after etching. N vacancies are in...This paper focuses on how to reduce the gate leakage current caused by plasma dry etching. X-ray photoelectron spectroscopy （XPS） is employed to measure the AlGaN surface before and after etching. N vacancies are introduced, which cause that gate currents are not dominated by the thermal electron emission mechanism. N vacancies enhance the tunneling effect and reduce the Schottky barrier height as n-type doped in the etched AIGaN surface.A post-gate process for AlGaN/GaN HEMTs,annealing at 400℃ in a nitrogen ambient for 10min is introduced. After annealing, Ni atoms of gate metal reacted with Ga atoms of AlGaN, and N vacancies were reduced. The reverse leakage decreased by three orders of magnitude,the forward turn-on voltage increased and the ideality factor reduced from 3.07 to 2.08.展开更多
文摘High power and high-slope efficiency 650nm band real-refractive-index ridge w aveguide AlGaInP laser diodes with compressive strained MQW active layer are for med by pure Ar ion beam etching process.Symmetric laser mesas with high perpendi cularity,which are impossible to obtain by traditional wet etching method due to the use of a 15°-misoriented substrate,are obtained by this dry etching metho d.Laser diodes with 4μm wide,600μm long and 10%/90% coat are fabricated.Th e typical threshold current of these devices is 46mA at room temperature,and a s table fundamental-mode operation over 40mW is obtained.Very high slope efficien cy of 1.4W/A at 10mW and 1.1W/A at 40mW are realized.
基金supported by the State Key Development Programfor Basic Research of China(No.2002CB311903)the Key Innovation Program of the Chinese Academy of Sciences(No.KGCX2-S W-107)~~
文摘This paper focuses on how to reduce the gate leakage current caused by plasma dry etching. X-ray photoelectron spectroscopy （XPS） is employed to measure the AlGaN surface before and after etching. N vacancies are introduced, which cause that gate currents are not dominated by the thermal electron emission mechanism. N vacancies enhance the tunneling effect and reduce the Schottky barrier height as n-type doped in the etched AIGaN surface.A post-gate process for AlGaN/GaN HEMTs,annealing at 400℃ in a nitrogen ambient for 10min is introduced. After annealing, Ni atoms of gate metal reacted with Ga atoms of AlGaN, and N vacancies were reduced. The reverse leakage decreased by three orders of magnitude,the forward turn-on voltage increased and the ideality factor reduced from 3.07 to 2.08.
