Balanced carrier transport is observed in acceptor-acceptor (A-A') type polymer for ambipolar organic thin-film transistors (OTFTs). It is found that the incorporation of two electron-accepting moieties (BTz and...Balanced carrier transport is observed in acceptor-acceptor (A-A') type polymer for ambipolar organic thin-film transistors (OTFTs). It is found that the incorporation of two electron-accepting moieties (BTz and IIG) into a polymer main chain to form A-A' polymer PIIG-BTz could lower highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) levels and facilitate good molecular stacking of the polymer. Ambipolar transistor behaviour for PIIG-BTz, with the balanced hole and electron mobilities of 0.030 and 0.022 cm2 V 1 s-i was observed in OTFT devices, respectively. The study in this work reveals that the utilization of acceptor-acceptor (A-A') structure in polymer main chain can be a feasible strategy to develop ambipolar polymer semiconductors.展开更多
In this paper, we study the effects of an unintended dopant in the channel on the current-voltage char-acteristics of a Double-Gate (DG) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). Non-Equilibrium Gree...In this paper, we study the effects of an unintended dopant in the channel on the current-voltage char-acteristics of a Double-Gate (DG) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). Non-Equilibrium Green's Function (NEGF) approach is used. A quantum transport model to calculate the drain current is presented and subthreshold swing and drain induced barrier lowering (DIBL) effect are studied.展开更多
基金supported by the National Natural Science Foundation of China (51173055, 21504026, 51572094)the National Basic Research Program of China (2013CBA01600)the China Postdoctoral Science Foundation (2013M542009)
文摘Balanced carrier transport is observed in acceptor-acceptor (A-A') type polymer for ambipolar organic thin-film transistors (OTFTs). It is found that the incorporation of two electron-accepting moieties (BTz and IIG) into a polymer main chain to form A-A' polymer PIIG-BTz could lower highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) levels and facilitate good molecular stacking of the polymer. Ambipolar transistor behaviour for PIIG-BTz, with the balanced hole and electron mobilities of 0.030 and 0.022 cm2 V 1 s-i was observed in OTFT devices, respectively. The study in this work reveals that the utilization of acceptor-acceptor (A-A') structure in polymer main chain can be a feasible strategy to develop ambipolar polymer semiconductors.
基金Supported of National Natural Science Foundation of China under Grant Nos. 61171010 and 61171011the State Key Laboratory of ASIC and System is Appreciated under Grant No. 11MS015the Special Funds for Major State Basic Research (973) under Grant No. 2011CBA00603
文摘In this paper, we study the effects of an unintended dopant in the channel on the current-voltage char-acteristics of a Double-Gate (DG) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). Non-Equilibrium Green's Function (NEGF) approach is used. A quantum transport model to calculate the drain current is presented and subthreshold swing and drain induced barrier lowering (DIBL) effect are studied.