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P波段100W(CW)硅大功率平衡晶体管的设计
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作者 牛晓青 张海平 《半导体情报》 1994年第4期17-21,共5页
本文介绍了采用网状发射极图形结构、浓硼扩散发射极镇流电阻以及用输入端内部网络匹配和平衡结构器件组装形式研制出的硅大功率器件,该器件在225~400MHz频率下输出功率100W,增益7.5dB,效率55%。
关键词 平衡晶体管 大功率晶体管
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An isoindigo-bithiazole-based acceptor-acceptor copolymer for balanced ambipolar organic thin-film transistors 被引量:2
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作者 Ping Li Hanlin Wang +5 位作者 Lanchao Ma Long Xu Fei Xiao Zhengran Yi Yunqi Liu Shuai Wang 《Science China Chemistry》 SCIE EI CAS CSCD 2016年第6期679-683,共5页
Balanced carrier transport is observed in acceptor-acceptor (A-A') type polymer for ambipolar organic thin-film transistors (OTFTs). It is found that the incorporation of two electron-accepting moieties (BTz and... Balanced carrier transport is observed in acceptor-acceptor (A-A') type polymer for ambipolar organic thin-film transistors (OTFTs). It is found that the incorporation of two electron-accepting moieties (BTz and IIG) into a polymer main chain to form A-A' polymer PIIG-BTz could lower highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) levels and facilitate good molecular stacking of the polymer. Ambipolar transistor behaviour for PIIG-BTz, with the balanced hole and electron mobilities of 0.030 and 0.022 cm2 V 1 s-i was observed in OTFT devices, respectively. The study in this work reveals that the utilization of acceptor-acceptor (A-A') structure in polymer main chain can be a feasible strategy to develop ambipolar polymer semiconductors. 展开更多
关键词 organic thin-film transistors acceptor-acceptor structure balanced ambipolar transport conjugated copolymer
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Effects of Unintended Dopants on I-V Characteristics of the Double-Gate MOSFETs,a Simulation Study
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作者 李佩成 梅光辉 +3 位作者 胡光喜 王伶俐 刘冉 汤庭鳌 《Communications in Theoretical Physics》 SCIE CAS CSCD 2012年第7期171-174,共4页
In this paper, we study the effects of an unintended dopant in the channel on the current-voltage char-acteristics of a Double-Gate (DG) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). Non-Equilibrium Gree... In this paper, we study the effects of an unintended dopant in the channel on the current-voltage char-acteristics of a Double-Gate (DG) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). Non-Equilibrium Green's Function (NEGF) approach is used. A quantum transport model to calculate the drain current is presented and subthreshold swing and drain induced barrier lowering (DIBL) effect are studied. 展开更多
关键词 current-voltage characteristics double gate MOSFET unintended dopant
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