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基于MATLAB的石墨烯场效应晶体管电学特性研究 被引量:1
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作者 徐建丽 《电子元件与材料》 CAS CSCD 2015年第9期108-110,共3页
石墨烯场效应晶体管的结构参数是对晶体管电学特性有重要影响。利用MATLAB软件平台仿真研究了石墨烯场效应晶体管势垒层厚度、栅极长度、平面掺杂浓度、温度等结构参数对晶体管结构电学特性的影响规律,并根据研究选择最佳的结构参数,为... 石墨烯场效应晶体管的结构参数是对晶体管电学特性有重要影响。利用MATLAB软件平台仿真研究了石墨烯场效应晶体管势垒层厚度、栅极长度、平面掺杂浓度、温度等结构参数对晶体管结构电学特性的影响规律,并根据研究选择最佳的结构参数,为石墨烯场效应晶体管加工工艺提供依据。 展开更多
关键词 石墨烯 场效应晶体管 电学特性 栅极长度 垒层厚度 平面掺杂浓度 温度
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Anomalous in-plane magnetoresistance of electron-doped cuprate La_(2.x)Ce_xCuO_(4±δ) 被引量:1
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作者 Heshan Yu Ge He +6 位作者 Yanli Jia Xu Zhang Jie Yuan Beiyi Zhu A.Kusmartseva F.V.Kusmartsev Kui Jin 《Science China(Physics,Mechanics & Astronomy)》 SCIE EI CAS CSCD 2017年第9期70-75,共6页
We report systematic in-plane magnetoresistance measurements on the electron-doped cuprate La2-x,.CexCuO4±δ thin films as a function of Ce doping and oxygen content in the magnetic field up to 14 T. A crossover ... We report systematic in-plane magnetoresistance measurements on the electron-doped cuprate La2-x,.CexCuO4±δ thin films as a function of Ce doping and oxygen content in the magnetic field up to 14 T. A crossover from negative to positive magnetoresistance occurs between the doping level x = 0.07 and 0.08. Above x = 0.08, the positive magnetoresistance effect appears, and is almost indiscernible at x = 0.15. By tuning the oxygen content, the as-grown samples show negative magnetoresistance effect, whereas the optimally annealed ones display positive magnetoresistance effect at the doping level x = 0.15. Intriguingly, a linear-field dependence of in-plane magnetoresistanee is observed at the underdoping level x = 0.06, the optimal doping level x = 0. i and slightly overdoping level x = 0.11. These anomalies of in-plane magnetoresistance may be related to the intrinsic inhomogeneity in the cuprates, which is discussed in the framework of network model. 展开更多
关键词 electron-doped cuprates negative magnetoresistance linear magnetoresistance
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