Electrical properties and magnetoresistance have been studied in two series of xAg-La0.67（Ca0.65Ba0.35）0.33MnO3 and xPd-La0.67（Ca0.65Ba0.35）0.33MnO3 （abbreviated by xAg-LCBMO and xPd-LCBMO） composites. Both Pd a...Electrical properties and magnetoresistance have been studied in two series of xAg-La0.67（Ca0.65Ba0.35）0.33MnO3 and xPd-La0.67（Ca0.65Ba0.35）0.33MnO3 （abbreviated by xAg-LCBMO and xPd-LCBMO） composites. Both Pd and Ag addition induce a decrease in resistivity and an increase in temperature at which the resistivity reaches its maximum. This is mainly due to the improvement of grain boundaries caused by the segregation of good conductive metal grains on the grain boundaries/surfaces. In addition, both Pd and Ag addition induce a large enhancement of room temperature magnetoresistance （RTMR）. Note that 27% molar ratio of Ag addition induces a large RTMR of about 70%, about ten times larger than pure LCBMO, whereas 27% molar ratio Pd addition brings a much larger RTMR of about 170%. The large enhancements of MR can be attributed to the decrease in resistivity of the samples caused by the good conductive metal. On the other hand, the polarization of Pd atoms near the Mn ions on the grain surfaces/boundaries plays a very im-portant role in the increase in MR, which induces a large number of spin clusters in Pd-added samples.展开更多
Mixed-valence manganites have attracted considerable research focus in recent years not only because of the potential application of colossal magnetoresistance(CMR) in magnetic devices,but also because of many intrigu...Mixed-valence manganites have attracted considerable research focus in recent years not only because of the potential application of colossal magnetoresistance(CMR) in magnetic devices,but also because of many intriguing physical properties observed in these materials.Doping elements at A-site can alter the filling of 3d Mn band and the tolerance factor.Therefore the hole-and electron-doped CMR manganites exhibit a rich phase diagram.In addition,more theoretical and experimental results suggest that phase separation is a critical factor for the understanding of CMR phenomena.Recently,there is an increasing interest in the fabrication and investigation on manganite-based heterojunction,which demonstrated excellent rectifying property,large MR,and photovoltaic effect.展开更多
文摘Electrical properties and magnetoresistance have been studied in two series of xAg-La0.67（Ca0.65Ba0.35）0.33MnO3 and xPd-La0.67（Ca0.65Ba0.35）0.33MnO3 （abbreviated by xAg-LCBMO and xPd-LCBMO） composites. Both Pd and Ag addition induce a decrease in resistivity and an increase in temperature at which the resistivity reaches its maximum. This is mainly due to the improvement of grain boundaries caused by the segregation of good conductive metal grains on the grain boundaries/surfaces. In addition, both Pd and Ag addition induce a large enhancement of room temperature magnetoresistance （RTMR）. Note that 27% molar ratio of Ag addition induces a large RTMR of about 70%, about ten times larger than pure LCBMO, whereas 27% molar ratio Pd addition brings a much larger RTMR of about 170%. The large enhancements of MR can be attributed to the decrease in resistivity of the samples caused by the good conductive metal. On the other hand, the polarization of Pd atoms near the Mn ions on the grain surfaces/boundaries plays a very im-portant role in the increase in MR, which induces a large number of spin clusters in Pd-added samples.
基金supported by the National Natural Science Foundation of China(Grant Nos.10774146,10974205,10904150 and 11274313)Anhui Provincial Natural Science Foundation(Grant No.1208085MA06)+1 种基金Joint Funds of the National Natural Science Foundation of China and the Chinese Academy of Sciences' Large-scale Scientific Facility(Grant No. U1232138)support by the National Key Basic Research(Grant No. 2011CBA00111)
文摘Mixed-valence manganites have attracted considerable research focus in recent years not only because of the potential application of colossal magnetoresistance(CMR) in magnetic devices,but also because of many intriguing physical properties observed in these materials.Doping elements at A-site can alter the filling of 3d Mn band and the tolerance factor.Therefore the hole-and electron-doped CMR manganites exhibit a rich phase diagram.In addition,more theoretical and experimental results suggest that phase separation is a critical factor for the understanding of CMR phenomena.Recently,there is an increasing interest in the fabrication and investigation on manganite-based heterojunction,which demonstrated excellent rectifying property,large MR,and photovoltaic effect.
