基于生命教育的普通高校学制延长生管理研究

以生命教育为核心的高校延长生教育管理体系,对延长生从内因进行激励,以生命教育为着力点,建立和谐的教育体制,采用有效的方法,对延长生进行再教育、再培养。

高校党建工作促进延长学制生有效管理对策探究

高校延长学制生问题引起社会有关方面的关注,但部分高校对延长学制生的管理并未引起足够重视,对这类学生缺乏有效管理。因此,探索创新延长学制生管理有效途径,成为高校思想政治工作者又一崭新课题。文章有针对性提出以党建工作为载体,实现党建工作与延长学制生教育管理工作的有机结合,增进基层党组织活力,创新延长学制生有效管理途径,改进党建工作方法,最终实现人才培养目标。

Epitaxial Growth of 150mm Silicon Epi\|Wafers for Advanced IC Applications

With the device feature's size miniaturization in very large scale integrated circuit and ultralarge scale integrated circuit towards the sub\|micron and beyond level, the next generation of IC device requires silicon wafers with more improved electrical characteristics and reliability as well as a high perfection of the wafer surface. Compared with the polished wafer with a relatively high density of crystal originated defects (e. g. COPs), silicon epi\|wafers can meet such high requirements. The current development of researches on the 150mm silicon epi\|wafers for advanced IC applications is described. The P/P\++ CMOS silicon epi\|wafers were fabricated on a PE2061 Epitaxial Reactor (made by Italian LPE Company). The material parameters of epi\|wafers, such as epi\|defects, uniformity of thickness and resistivity, transition width, and minority carrier generation lifetime for epi\|layer were characterized in detail. It is demonstrated that the 150mm silicon epi\|wafers on PE2061 can meet the stringent requirements for the advanced IC applications.

Improved Epitaxy of 3C-SiC Layers on Si(100) by New CVD/LPCVD System

Single crystalline 3C-SiC epitaxial layers are grown on φ 50mm Si wafers by a new resistively heated CVD/LPCVD system,using SiH_4,C_2H_4 and H_2 as gas precursors.X-ray diffraction and Raman scattering measurements are used to investigate the crystallinity of the grown films.Electrical properties of the epitaxial 3C-SiC layers with thickness of 1～3μm are measured by Van der Pauw method.The improved Hall mobility reaches the highest value of 470cm 2/(V·s) at the carrier concentration of 7.7×10 17 cm -3 .

Growth of Thin Silicon on Sapphire (SOS) Film Materials and Device Applications

The increasing emphasis on the sub\|micron CMOS/SOS devices has placed a demand for high quality thin silicon on sapphire (SOS) films with thickness of the order 100-200nm. It is demonstrated that the crystalline quality of as\|grown thin SOS films by chemically vapor deposition method can be greatly improved by solid phase epitaxy (SPE) process: implantation of self\|silicon ions and subsequent thermal annealing. Subsequent regrowth of this amorphous layer leads to a great improvement in silicon layer crystallinity and channel carrier mobility, respectively by double crystal X\|ray diffraction and electrical measurements. Thin SPE SOS films would have application to the high\|performance CMOS circuitry.

A New Process for Improving Performance of VCSELs

A new process method is proposed to improve the light output power of GaAs vertical cavity surface-emitting lasers （VCSELs）. The VCSELs with open-annulus-distributed holes have a light output power 1.34 times higher than those with ring trenches. The 14μm-aperture devices have a light output power higher than 10mW and have a maximum of 12.48mW at 29.6mA. In addition,open-annulus-distributed holes offer bridges for current injection,so the connecting Ti-Au metal between the ohmic contact and bonding pad does not have to cross the ring trench, and it therefore would not cause the connecting metal to be broken. These VCSELs also show high-temperature operation capabilities,and they have a maximum output power of 8mW even at an operation temperature of up to 60℃.

Highly-Strained InGaAs/GaAs Single-Quantum-Well Lasers Grown by Molecular Beam Epitaxy

Highly stained InGaAs/GaAs Quantum Wells (QW) are grown by using molecular beam epitaxy.The room-temperature photoluminescence (PL) peak wavelength as long as 1160nm is obtained from QW with the In composition of 38% and the well width of 6 8nm.The full-width at half-maximum of the PL peak is 22meV,indicating a good quality.InGaAs/GaAs QW ridge-waveguide lasers with emission wavelength of 1120nm are demonstrated.For 100-μm-wide ridge-waveguide lasers with a cavity length of 800μm,the kink-free output power up to 200mW is achieved with the slope efficiency of 0 84mW/mA under the continue-wave operation.For 10μm-wide ridge-waveguide lasers,the lowest threshold current density of 450A/cm2 and the characteristic temperature of 90K are obtained.

Homoepitaxial Growth and Characterization of 4H-SiC Epilayers by Low-Pressure Hot-Wall Chemical Vapor Deposition

Horizontal air-cooled low-pressure hot-wall CVD (LP-HWCVD) system is developed to get highly qualitical 4H-SiC epilayers.Homoepitaxial growth of 4H-SiC on off-oriented Si-face (0001) 4H-SiC substrates is performed at 1500℃ with a pressure of 1.3×103Pa by using the step-controlled epitaxy.The growth rate is controlled to be about 1.0μm/h.The surface morphologies and structural and optical properties of 4H-SiC epilayers are characterized with Nomarski optical microscope,atomic force microscopy (AFM),X-ray diffraction,Raman scattering,and low temperature photoluminescence (LTPL).N-type 4H-SiC epilayers are obtained by in-situ doping of NH 3 with the flow rate ranging from 0.1 to 3sccm.SiC p-n junctions are obtained on these epitaxial layers and their electrical and optical characteristics are presented.The obtained p-n junction diodes can be operated at the temperature up to 400℃,which provides a potential for high-temperature applications.

Characterization of Ga NAs/ Ga As and Ga In NAs/ Ga As Quantum Wells Grown by Plasma-Assisted Molecular Beam Epitaxy: Effects of Ion Damage

The effects of ion damage on Ga NAs/Ga As and Ga In NAs/Ga As quantum wells ( QWs) grown by plas- ma- assisted molecular beam epitaxy have been investigated. Itis found thation damage is a key factor affecting the quality of Ga NAs and Ga In NAs QWs. Obvious appearance of pendello¨ sung fringes in X- ray diffraction pattern and remarkable im provement in the optical properties of the samples grown with ion removal magnets are observed.By removing nitrogen ions,the PL intensity of the Ga In NAs QW is improved so as to be comparable with that of Ga In As QW. The stronger is the magnetic field,the m ore obvious the PL intensity im provement would be.

Measurement of Refractive Indices of (Al_xGa_(1-x))_(0.51)In_(0.49)P Grown by Low Pressure Organometallic Vapor Phase Epitaxy

The refractive indices of disordered (Al xGa 1-x ) 0 51 In 0 49 P,which is grown by low-pressure organometallic vapor phase epitaxy and lattice-matched to GaAs substrate,have been determined by measuring their reflectance spectra when the wavelength ranges between 0 5 to 2 5 micrometer.A single-oscillator dispersion model is used to verify the experiment data and calculate the reflectance spectrum.The refractive indices are used to analyze the waveguide of strain quantum well GaInP/AlGaInP visible laser diode.The simulated far field pattern is consistent with the experimental results very well.

Plasma Treatment Enhanced Magnetic Properties in Manganese Doped Titanium Nitride Thin Films

The ferromagnetic manganese doped TiN films were grown by plasma assisted molecular beam epitaxy on MgO（001） substrates. The nitrogen concentration and the ratio of manganese at Ti lattice sites increase after the plasma annealing post treatment. TIN（002） peak shifts toward low angle direction and TiN（111） peak disappears after the post treatment. The lattice expansion and peak shift are mainly ascribed to the reduction of nitrogen vacancies in films. The magnetism was suppressed in as-prepared sample due to the pinning effect of the nitrogen vacancies at defect sites or interface. The magnetism can be activated by the plasma implantation along with nitrogen vacancies reduce. The decrease of nitrogen vacancies leads to the enhancement of ferromagnetism.

Single Layer Growth of Strained Epitaxy at Low Temperature

Contacting mode atomic force microscopy (AFM) is used to measure the In 0.35 Ga 0.65 As/GaAs epilayer grown at low temperature (460℃).Unlike the normal layer by layer growth (FvdM mode) or self organized islands growth (SK mode),samples grown under 460℃ are found to be large islands with atomic thick terraces.AFM measurements reveale near one monolayer high steps.This kind of growth is good between FvdM and SK growth modes and can be used to understand the evolution of strained epitaxy from FvdM to SK mode.

AFM Observation of GaN Grown on Different Substrates at Low Temperatures

Aim To study the relationship between the substrate temperature and the morphology and properties of GaN. Methods\ Applying the hydride chemical vapor deposition method, GaN films were deposited on different kinds of substrates, including sapphire, Si(111),Si(100),GaAs and GaP(111) both on the P face and the Ga face. The growth was performed at low temperatures of below 700℃. XRD, Hall measurement, cathodoluminescence (CL) and atomic force microscopy (AFM) were used to characterise the film properties. Results\ It was found that the temperature and the nature of substrate materials influence the layer morphology. Conclusion\ The analysis shows that no apparent relationship exists between the optical properties and layer morphology.

Microstructure and superhardness effect of VC/TiC superlattice films

Vanadium carbide/titanium carbide （VC/TiC） superlattice films were synthesized by magnetron sputtering method. The effects of modulation period on the microstructure evolution and mechanical properties were investigated by EDXA, XRD, HRTEM and nano-indentation. The results reveal that the VC/TiC superlattice films form an epitaxial structure when their modulation period is less than a critical value, accompanied with a remarkable increase in hardness. Further increasing the modulation period, the hardness of superlattices decreases slowly to the rule-of-mixture value due to the destruction of epitaxial structures. The XRD results reveal that three-directional strains are generated in superlattices when the epitaxial structure is formed, which may change the modulus of constituent layers. This may explain the remarkable hardness enhancement of VC/TiC superlattices.

Uniformity Investigation in 3C-SiC Epitaxial Layers Grown on Si Substrates by Horizontal Hot-Wall CVD

50mm 3C-SiC epilayers are grown on （100） and （111） Si substrates in a newly developed horizontal lowpressure hot-wall CVD reactor under different growth pressures and flow rates of H2 carrier gas. The structure,electrical properties, and thickness uniformity of the 3C-SiC epilayers are investigated by X-ray diffraction （XRD） ,sheet resistance measurement, and spectroscopic ellipsometry. XRD patterns show that the 3C-SiC films have excellent crystallinity. The narrowest full widths at half maximum of the SIC（200） and （111） peaks are 0.41° and 0.21°, respectively. The best electrical uniformity of the 50mm 3C-SiC films obtained by sheet resistance measurement is 2.15%. A σ/mean value of ± 5.7% in thickness uniformity is obtained.

Flk-1 specific kinase inhibitor SU5416 blocked angiogenesis of Lewis carcinoma in mouse and prolonged the survival

Objective: To reveal the mechanism and effect of SU5416 in the treatment of mouse Lewis cancer in vivo. Methods: Lewis cell was transplanted into groin of C57/B6 mouse by subcutaneous injection, then SU5416 was administrated intraperitoneally to investigate the impact of SU5416 on tumor angiogenesis and growth in vivo. 32 mice were treated with SU5416 at two different doses every day until the end-point. As a control, 8 mice received no treatment and 8 mice were treated with vehicle (DMSO) only after implantation. Results: Median survival in the treated group was statistically longer compared to that in the control groups (P < 0.05) and no significant systemic adverse was observed. Histological analysis of the treated tumors showed an increase in necroses and reduced in angiogenesis compared to the control tumors. Furthermore, the percent of apoptotic cells increased in the treated tumors by FCM, the expressions of VEGF and KDR had no change after SU5416 administration by western blot. Conclusion: SU5416 may be useful therapeutics drug that specifically inhibits the enzymatic activity of KDR kinase and could down regulate the tumor angiogenesis.

Helicobacter pylori's virulence and infection persistence define pre-eclampsia complicated by fetal growth retardation

AIM: To better understand the pathogenic role of Helicobacter pylori (H. pylori) in pre-eclampsia (PE), and whether it is associated or not with fetal growth retardation (FGR). METHODS: Maternal blood samples were collected from 62 consecutive pregnant women with a diagnosis of PE and/or FGR, and from 49 women with uneventful pregnancies (controls). Serum samples were evaluated by immunoblot assay for presence of specific antibodies against H. pylori antigens [virulence: cytotoxin-associated antigen A (CagA); ureases; heat shock protein B; flagellin A; persistence: vacuolating cytotoxin A (VacA)]. Maternal complete blood count and liver enzymes levels were assessed at delivery by an automated analyzer. RESULTS: A significantly higher percentage of H. pyloriseropositive women were found among PE cases (85.7%) compared to controls (42.9%, P < 0.001). There were no differences between pregnancies complicated by FGR without maternal hypertension (46.2%) and controls. Importantly, persistent and virulent infections (VacA/ CagA seropositive patients, intermediate leukocyte blood count and aspartate aminotransferase levels) were exclusively associated with pre-eclampsia complicated by FGR, while virulent but acute infections (CagA positive/ VacA negative patients, highest leukocyte blood count and aspartate aminotransferase levels) specifically correlated with PE without FGR. CONCLUSION: Our data strongly indicate that persistent and virulent H. pylori infections cause or contribute to PE complicated by FGR, but not to PE without feto-placental compromise.

Epitaxial α″-Fe_(16)N_2 Films Grown on NaCl (001) by Facing Target Sputtering

There is a gr eat interest in obtaining epitaxial α″ nitride phase of iron because of their special ferromagnetic properties. α″ Fe 16 N 2 thin films have been prep ared by facing target sputtering (FTS) onto NaCl (001) substrates in a mixture of argon(Ar) and N 2 gases. The base pressure was 6×10 -5 Pa. During sput tering, the partial pressures of Ar and N 2 gases were kept constant at 0.3 Pa and 0.05 Pa respectively. The deposition rate was about 0.2 nm/s. The substrate temperature was held at about 100 ℃. Annealing of the films was sequentially ca rried out at 150 ℃ for 1 h in vacuum ( at least 10 -4 Pa ) to obtain α″ phase. Transmission electron microscope (TEM) observations and X ray diffract ion (XRD) patterns showed that the α″ Fe 16 N 2 epitaxially grew on the NaCl substrates. It was found that the arrangement of the SAD patterns exhibits perfect symmetries.By using super lattice reflections, the lattice constants a=b=(5.71±0.02)×10 -1 nm and c=(6.30±0.04) ×10 -1 nm of the α″ phase with a body centered tetragonal (BCT) structu re were determined, which was very close to the results obtained by Jack (a=b= 5.72×10 -1 nm, c= 6.29×10 -1 nm). The X ray diffraction patterns and the selected area diffraction patterns showed t hat α″ Fe 16 N 2 epitaxially grew on the NaCl (001) substrate with orien tation relationships α″ Fe 16 N 2 (001) ‖NaCl (001),α″ Fe 16 N 2 ‖NaCl .

Multiple eutectic orientation relationships in undercooled Ni-38wt.%Si eutectic alloy

Eutectic orientation relationships(EORs) in an undercooled Ni-38 wt.%Si alloy were analyzed by electron backscatter diffraction. A total of seven EORs were identified, and three of them were found at the under-cooling degree ?T≈31 K. It is found that their orientations of the primary NiSi phase are same but the misorientation between the neighboring NiSi2 grains can be either 50° or 60°. The multiple EORs were ascribed to a possible change in the growth direction of the primary phase, the change of the primary phase from the NiSi phase to the NiSi2 phase, and the transition from coupled to uncoupled eutectic growth. The current work shows that epitaxial growth of the second eutectic phase on the primary eutectic phase can obey either a single EOR or multiple EORs, which is a unique phenomenon.

Uniformity of Electrical Parameters on MCT Epitaxy Film

For Hall measurement under different magnetic fields at LN2 temperature,Hg1-xCdxTe （MCT） film （radius 1 cm） grown on CdTe substrate by LPE is photoengraved into many small Van Der Pauw squares,then their Hall coefficients and mobilities are measured and analyzed,respectively.Two films were Hall-tested during the temperature range from LHe 4.2 K to about 200 K.An actual impression on the uniformity of electrical parameters for MCT film can obtained by means of the methods presented in this paper.