TP801单板机在开关件寿命测控仪上的应用

本文以“M—04寿命测控仪”为实例,简要介绍它的主要硬件和软件设计,以及抗干扰措施的考虑和实施。本仪器用来对电磁阀的寿命进行测控,稍作改进还可用来对继电器、接触器、步进电机、开关二极管等器件的可靠性,寿命进行检测。

1Cr25Ti管件开关漏气原因分析

本文通过对1Cr25Ti管件开关焊接部位的低倍观察，以及对其硬度和金相组织的检验，分析了管件开关的漏气原因，从而得知该管件开关漏气是由于焊接处的热应力裂纹引起的，而热应力裂纹的形成与焊接缺陷、旋锤加工内应力和老化试验所产生的脆性等多种因素有关。

1Cr25Ti管件开关漏气原因分析

本文通过对1Cr25Ti管件开关焊接部位的低倍观察,以及对其硬度和金相组织的检验,分析了管件开关的漏气原因。从而得知该管件开关漏气是由于焊接处的热应力裂纹引起的,而热应力裂纹的形成与焊接缺陷、旋锤加工内应力和老化试验所产生的脆性等多种因素有关。

开关功能件自动装配机的构建及其效能分析

结提出墙壁开关功能件自动装配机的方案,进行详细的技术和经济可行性分析,指出能够获得的实际效益。

用PLC与触摸屏实现非开关量的控制

随着PLC在工业控制中的广泛应用,其针对非开关量的控制也逐渐增多,采用PLC与触摸屏实现非开关量控制时插件选择与程序编制是两个重要的环节,结合自动制砖机中的非开关量控制,对这两个环节进行了论述。

一种液压阀件维修检测台的设计与实现

液压系统阀件在工作中发生漏泄、无法开关、无法换向等问题,会导致液压系统不能正常工作,需对其进行维修。文章为了检验阀件维修效果,设计了一种维修检测台。实践表明,该检测台结构合理、功能丰富、可拓展性强,对于提高管理人员维修能力具有良好效果。

二次设备直流电源插件老化预防与在线监测研究

针对电力二次设备常用的开关电源插件老化快、故障率高,容易对供电的板卡带来隐患的问题,提出一种延长直流电源插件寿命的措施以及实用可靠的在线监测技术,可有效提高电源设备的运行可靠性,降低事故发生的概率。

部分矿用电机车配套件容量选择合理性的判断方法

安全标志证书申办过程中须对送检产品进行技术审查,着重对矿用电机车配套的插销连接器或自动开关,调速用电阻器的容量选择合理性进行判断分析,对提高电机车的可靠安全运行可以起到重要作用。

Effect of Inertial Shock on RF MEMS Capacitive Switches Property in Low Vacuum

The influence of outside inertial shock combined with RF signal voltages on the properties of a shunt capacitive MEMS switch encapsulated in a low vacuum environment is analyzed considering the damping of the air around the MEMS switch membrane. An analytical expression that approximately computes the displacement induced by outside shock is obtained. According to the expression, the minimum required mechanical stiffness constant of an MEMS switch beam in some maximum tolerated insertion loss condition and some external inertial shock environment or the insertion loss induced by external inertial shock can also be obtained. The influence is also illustrated with an RF MEMS capacitive switch example,which shows that outside environment factors have to be taken into account when designing RF MEMS capacitive switches working in low vacuum. While encapsulating RF MEMS switches in low vacuum diminishes the air damping and improves the switch speed and operation voltage,the performances of a switch is incident to being influenced by outside environment. This study is very useful for the optimized design of RF MEMS capacitive switches working in low vacuum.

连接器注射模设计

在连接器注射模设计中,用镶拼结构的方法,可以用一副模具生产多种塑件,大大降低厂家的生产成本,解决了以前一副模具只能生产一种塑件的问题。

电子开关接插件滚镀银工艺

指出了电子开关接插件对镀银层的要求,介绍了接插件滚镀银的工艺,其流程包括:化学除油,滚光除油,无烟光亮酸洗,预镀银,光亮镀银,浸保护剂,烘干,检验,包装。给出了各工序的工艺条件、控制要点、常见故障的解决措施及不合格镀银层的退除和银回收的方法。

Modeling and Optimization of a Special Multistage Star Switching （SMSSS） System with SEs at Unequal Port Rates

There has been lack of an efficient design and evaluation method for the multistage star switching(MSSS) architecture in which the ports' rates of each switching element(SE) are unequal.Thus,we identify and propose a special MSSS(SMSSS) model for the first time,where all special SEs,known as basic switching modules(BSMs),are connected hierarchically into a tree profile.Unlike the existing investigations,each BSM in this model is characterized by one highrate port and several low-rate ports.This study focuses on the analysis,design and optimization of the SMSSS model.Moreover,we propose a novel BSM cost model which relates to its flux factor considered rarely in existing studies.Two examples are demonstrated to obtain the optimal structure parameters of the SMSSS system with a minimum overall cost.The comparison of the proposed SMSSS with similar fat tree structures indicates its relative advantages.

核电厂典型事故分析与事故仿真复现

本文以韩国蔚珍1号机蒸发器水位控制系统导致误停堆事故为例,对其误停堆事故的原因进行了分析,调研发现该事故由一块切换开关插件故障导致。本文通过对切换开关插件工作原理分析提出2种解决方案,并编写Labview程序进行蒸发器水位控制系统的仿真及事故复现。

摩托车实用电路二则——喇叭触点防蚀方法

摩托车用喇叭工作电流一般在1～2A，电流较大，长期使用，易造成喇叭开关触点烧蚀导致接触不良而声音嘶哑，此时可用细砂纸把触点打磨光滑再投入使用，或加装如图1所示的继电器开关，但前者不能彻底解决问题，日久必又烧蚀触点，后者虽避免了喇叭开关触点的烧蚀，但实质是把烧蚀转移到继电器开关触点上。

Experimental Noise Analysis of Reed Switch Sensor Signal under Environmental Vibration

The chattering noise problem of reed switch sensor signal for Automatic Meter Reading system was analyzed experimentally under various types of external vibrations and shocks. The external vibration level amplitude was measured with an accelerometer. To apply for water flow measurement devices, the reed switch sensors should keep high reliability. But the measured digital meter data are occurred difference or errors by chattering noise. The reed switch contains chattering error by itself at the force equivalent position. The vibrations such as passing vehicle near to the reed switch installed location causes chattering. In order to reduce chattering error, most system uses just software methods, for example using digital filter algorithm and also statistical calibration methods. However software approaches were implemented for reducing chattering error, there has still generated chattering error due to external mechanical vibrations and magnetic field. The chattering errors can be reduced by changing leaf spring structure using mechanical hysteresis characteristics.

Hard Switching Process Optimization for Selected Transistor Suited for High Power and High Frequency Operation

This paper deals with optimization of hard switching commutation mode for high-power, high-frequency consumer applications for selected power transistor. The experimental investigation of suitable settings is outgoing from simulation analysis of hard switching for different transistor structures. For these purposes, the simulation models of power semiconductor switches with high level of validity have been used. After that, the experimental analysis for selected transistor was done with change of parameters that are influencing commutation process of transistor. Target of such kind of analysis was to reach as low switching losses as possible, achieving high power density and efficiency of power system, without utilization of improved switching techniques such as resonant switching. The results confirm that this task is realizable through use of progressive semiconductor devices such as SiC diodes and/or through latest families of MOSFET devices.

Conductive metallic filaments dominate in hybrid perovskite-based memory devices

Organic-inorganic hybrid perovskites (OHPs) are well-known as light-absorbing materials in solar cells and have recently attracted considerable attention for the applications in resistive switching memory. Previous studies have shown that ions can migrate to form a conductive channel in perovskites under an external voltage. However, the exact resistance mechanism for Ag or halogens which dominate the resistive behavior is still controversial. Here, we demonstrate a resistive switching memory device based on Ag/FA0.83MA0.17Pb(I0.82Br0.18)3/fluorine doped tin oxide (FTO). The migration of Ag cations and halide anions is demonstrated by energy dispersive X-ray spectroscopy (EDS) after the SET process (positive voltage on Ag). By comparing the I-V behavior of the Au-based devices, it is clear that the conductive channel formed by Ag is the main factor of the switching characteristics for Ag-based devices. Meanwhile, by controlling the appropriate SET voltage, two kinds of resistance characteristics of the analog switch and threshold switch can be realized in the Ag-based device. As a result, it may be possible to implement both data storage and neuromorphic computing in a single device.

Non-blocking four-port optical router based on thermooptic silicon microrings

By using silicon-on-insulator(SOI) platform, 12 channel waveguides, and four parallel-coupling one-microring resonator routing elements, a non-blocking four-port optical router is proposed. Structure design and optimization are performed on the routing elements at 1 550 nm. At drop state with a power consumption of 0 m W, the insertion loss of the drop port is less than 1.12 d B, and the crosstalk between the two output ports is less than-28 d B; at through state with a power consumption of 22 m W, the insertion loss of the through port is less than 0.45 d B, and the crosstalk between the two output ports is below-21 d B. Routing topology and function are demonstrated for the four-port optical router. The router can work at nine non-blocking routing states using the thermo-optic(TO) effect of silicon for tuning the resonance of each switching element. Detailed characterizations are presented, including output spectrum, insertion loss, and crosstalk. According to the analysis on all the data links of the router, the insertion loss is within the range of 0.13—3.36 d B, and the crosstalk is less than-19.46 d B. The router can meet the need of large-scale optical network-on-chip(ONo C).

Subthermionic field-effect transistors with sub-5 nm gate lengths based on van der Waals ferroelectric heterostructures

Overcoming the sub-5 nm gate length limit and decreasing the power dissipation are two main objects in the electronics research field. Besides advanced engineering techniques, considering new material systems may be helpful. Here, we demonstrate two-dimensional(2D) subthermionic field-effect transistors(FETs) with sub-5 nm gate lengths based on ferroelectric(FE) van der Waals heterostructures(vdWHs).The FE vd WHs are composed of graphene, MoS2, and CuInP2S6 acting as 2D contacts, channels, and ferroelectric dielectric layers, respectively. We first show that the as-fabricated long-channel device exhibits nearly hysteresis-free subthermionic switching over three orders of magnitude of drain current at room temperature. Further, we fabricate short-channel subthermionic FETs using metallic carbon nanotubes as effective gate terminals. A typical device shows subthermionic switching over five-to-six orders of magnitude of drain current with a minimum subthreshold swing of 6.1 mV/dec at room temperature. Our results indicate that 2D materials system is promising for advanced highly-integrated energy-efficient electronic devices.