This letter showcases the successful fabrication of an enhancement-mode(E-mode)buried p-channel GaN fieldeffect-transistor on a standard p-GaN/AlGaN/GaN-on-Si power HEMT substrate.The transistor exhibits a threshold v...This letter showcases the successful fabrication of an enhancement-mode(E-mode)buried p-channel GaN fieldeffect-transistor on a standard p-GaN/AlGaN/GaN-on-Si power HEMT substrate.The transistor exhibits a threshold voltage(VTH)of−3.8 V,a maximum ON-state current(ION)of 1.12 mA/mm,and an impressive ION/IOFF ratio of 10^(7).To achieve these remarkable results,an H plasma treatment was strategically applied to the gated p-GaN region,where a relatively thick GaN layer(i.e.,70 nm)was kept intact without aggressive gate recess.Through this treatment,the top portion of the GaN layer was converted to be hole-free,leaving only the bottom portion p-type and spatially separated from the etched GaN surface and gateoxide/GaN interface.This approach allows for E-mode operation while retaining high-quality p-channel characteristics.展开更多
We propose a heterostructure junctionless tunnel field effect transistor （HJL-TFET） using AIGaAs/Si. In the proposed HJL-TFET, low band gap silicon is used in the source side and higher band gap AlGaAs in the drain ...We propose a heterostructure junctionless tunnel field effect transistor （HJL-TFET） using AIGaAs/Si. In the proposed HJL-TFET, low band gap silicon is used in the source side and higher band gap AlGaAs in the drain side. The whole AlGaAs/Si region is heavily doped n-type. The proposed HJL-TFET uses two isolated gates （named gate, gatel ） with two different work functions （gate = 4.2 eV, gatel = 5.2 eV respectively）. The 2-D nature of HJL-TFET current flow is studied. The proposed structure is simulated in Silvaco with different gate dielectric materials. This structure exhibits a high on current in the range of 1.4 × 10^-6 A/μm, the off current remains as low as 9.1 × 10^-14 A/μm. So /ON/OFF ratio of 10^8 is achieved. Point subthreshold swing has also been reduced to a value of 41 mV/decade for TiO2 gate material.展开更多
We propose a nanoscale single gate ultra thin body intrinsic channel tunnel field effect transistor using the charge plasma concept for ultra low power applications. The characteristics of TFETs （having low leakage）...We propose a nanoscale single gate ultra thin body intrinsic channel tunnel field effect transistor using the charge plasma concept for ultra low power applications. The characteristics of TFETs （having low leakage） are improved by junctionless TFETs through blending advantages of Junctionless FETs （with high on current）. We further improved the characteristics, simultaneously simplifying the structure at a very low power rating using an InAs channel. We found that the proposed device structure has reduced short channel effects and parasitics and provides high speed operation even at a very low supply voltage with low leakage. Simulations resulted in Iovv of - 9 × 10-16A/um, IoN of ,-20uA/um, ION/IoFF of--2× 1010, threshold voltage of 0.057 V, subthreshold slope of 7 mV/dec and DIBL of 86 mV/V for PolyGate/HfO2/InAs TFET at a temperature of 300 K, gate length of 20 nm, oxide thickness of 2 nm, film thickness of 10 nm, low-k spacer thickness of 10 nm and VDD of 0.2 V.展开更多
We present a GaSb/In As junctionless tunnel FET and investigate its static device characteristics. The proposed structure presents tremendous performance at a very low supply voltage of 0.4 V. The key idea is to the p...We present a GaSb/In As junctionless tunnel FET and investigate its static device characteristics. The proposed structure presents tremendous performance at a very low supply voltage of 0.4 V. The key idea is to the present device architecture, which can be exploited as a digital switching device for sub 20 nm technology.Numerical simulations resulted in an IOFF of 8×10^-17A/ m, ION of 9 A/ m, ION/IOFF of 1×10^11,subthreshold slope of 9.33 m V/dec and DIBL of 87 m V/V for GaSb/InAs JLTFET at a temperature of 300 K,gate length of 20 nm, HfO2 gate dielectric thickness of 2 nm, film thickness of 10 nm, low-k spacer thickness of 10 nm and VDD of 0.4 V.展开更多
： We propose a new structure of InxAll-xN/GaN high electron mobility transistor （HEMT） with gate length of 20 nm. The threshold voltage of this HEMT is achieved as -0.472 V. In this device the InA1N barrier layer i...： We propose a new structure of InxAll-xN/GaN high electron mobility transistor （HEMT） with gate length of 20 nm. The threshold voltage of this HEMT is achieved as -0.472 V. In this device the InA1N barrier layer is intentionally n-doped to boost the ION/IOFF ratio. The InAlN layer acts as donor barrier layer for this HEMT which exhibits an ION = 10-4.3 A and a very low IOFF = 10-14.4 A resulting in an ION/IoFF ratio of 1010.1. We compared our obtained results with the conventional InAlN/GaN HEMT device having undoped barrier and found that the proposed device has almost l0s times better ION/IOFF ratio. Further, the mobility analysis in GaN channel of this proposed HEMT structure along with DC analysis, C-V and conductance characteristics by using small-signal analysis are also presented in this paper. Moreover, the shifts in threshold voltage by DIBL effect and gate leakage current in the proposed HEMT are also discussed. InAlN was chosen as the most preferred barrier layer as a replacement of AlGaN for its excellent thermal conductivity and very good scalability.展开更多
基金supported by the Youth Innovation Promotion Association of the Chinese Academy of Sciences(Grant No.2020321)the National Natural Science Foundation of China(Grant No.92163204).
文摘This letter showcases the successful fabrication of an enhancement-mode(E-mode)buried p-channel GaN fieldeffect-transistor on a standard p-GaN/AlGaN/GaN-on-Si power HEMT substrate.The transistor exhibits a threshold voltage(VTH)of−3.8 V,a maximum ON-state current(ION)of 1.12 mA/mm,and an impressive ION/IOFF ratio of 10^(7).To achieve these remarkable results,an H plasma treatment was strategically applied to the gated p-GaN region,where a relatively thick GaN layer(i.e.,70 nm)was kept intact without aggressive gate recess.Through this treatment,the top portion of the GaN layer was converted to be hole-free,leaving only the bottom portion p-type and spatially separated from the etched GaN surface and gateoxide/GaN interface.This approach allows for E-mode operation while retaining high-quality p-channel characteristics.
文摘We propose a heterostructure junctionless tunnel field effect transistor （HJL-TFET） using AIGaAs/Si. In the proposed HJL-TFET, low band gap silicon is used in the source side and higher band gap AlGaAs in the drain side. The whole AlGaAs/Si region is heavily doped n-type. The proposed HJL-TFET uses two isolated gates （named gate, gatel ） with two different work functions （gate = 4.2 eV, gatel = 5.2 eV respectively）. The 2-D nature of HJL-TFET current flow is studied. The proposed structure is simulated in Silvaco with different gate dielectric materials. This structure exhibits a high on current in the range of 1.4 × 10^-6 A/μm, the off current remains as low as 9.1 × 10^-14 A/μm. So /ON/OFF ratio of 10^8 is achieved. Point subthreshold swing has also been reduced to a value of 41 mV/decade for TiO2 gate material.
文摘We propose a nanoscale single gate ultra thin body intrinsic channel tunnel field effect transistor using the charge plasma concept for ultra low power applications. The characteristics of TFETs （having low leakage） are improved by junctionless TFETs through blending advantages of Junctionless FETs （with high on current）. We further improved the characteristics, simultaneously simplifying the structure at a very low power rating using an InAs channel. We found that the proposed device structure has reduced short channel effects and parasitics and provides high speed operation even at a very low supply voltage with low leakage. Simulations resulted in Iovv of - 9 × 10-16A/um, IoN of ,-20uA/um, ION/IoFF of--2× 1010, threshold voltage of 0.057 V, subthreshold slope of 7 mV/dec and DIBL of 86 mV/V for PolyGate/HfO2/InAs TFET at a temperature of 300 K, gate length of 20 nm, oxide thickness of 2 nm, film thickness of 10 nm, low-k spacer thickness of 10 nm and VDD of 0.2 V.
文摘We present a GaSb/In As junctionless tunnel FET and investigate its static device characteristics. The proposed structure presents tremendous performance at a very low supply voltage of 0.4 V. The key idea is to the present device architecture, which can be exploited as a digital switching device for sub 20 nm technology.Numerical simulations resulted in an IOFF of 8×10^-17A/ m, ION of 9 A/ m, ION/IOFF of 1×10^11,subthreshold slope of 9.33 m V/dec and DIBL of 87 m V/V for GaSb/InAs JLTFET at a temperature of 300 K,gate length of 20 nm, HfO2 gate dielectric thickness of 2 nm, film thickness of 10 nm, low-k spacer thickness of 10 nm and VDD of 0.4 V.
文摘： We propose a new structure of InxAll-xN/GaN high electron mobility transistor （HEMT） with gate length of 20 nm. The threshold voltage of this HEMT is achieved as -0.472 V. In this device the InA1N barrier layer is intentionally n-doped to boost the ION/IOFF ratio. The InAlN layer acts as donor barrier layer for this HEMT which exhibits an ION = 10-4.3 A and a very low IOFF = 10-14.4 A resulting in an ION/IoFF ratio of 1010.1. We compared our obtained results with the conventional InAlN/GaN HEMT device having undoped barrier and found that the proposed device has almost l0s times better ION/IOFF ratio. Further, the mobility analysis in GaN channel of this proposed HEMT structure along with DC analysis, C-V and conductance characteristics by using small-signal analysis are also presented in this paper. Moreover, the shifts in threshold voltage by DIBL effect and gate leakage current in the proposed HEMT are also discussed. InAlN was chosen as the most preferred barrier layer as a replacement of AlGaN for its excellent thermal conductivity and very good scalability.
