By using LPCVD SiO 2 and poly silicon as sacrificial layer and cantilever respectively,a poly silicon micromachined RF MEMS(radio frequency microelectronic mechanical system) switch is fabricated.During the fabrica...By using LPCVD SiO 2 and poly silicon as sacrificial layer and cantilever respectively,a poly silicon micromachined RF MEMS(radio frequency microelectronic mechanical system) switch is fabricated.During the fabrication process,the stress of poly silicon is released to prevent poly silicon membrane from bending,and the issue of compatibility between RF switch and IC process technology is also resolved.The low residual tensile stress poly silicon cantilever is obtained by the optimization.The switch is tested,and the preliminary test results show:the pull down voltage is 89V,and the switch speed is about 5μs.The switch provides the potential to build a new fully monolithic integrated RF MEMS for radar and communications applications.展开更多
Results of calculation the recovery voltages conditioned by capacitive currents switching-off by high voltage vacuum and auto-compression （SF6） circuit-breakers are presented in the article. The purpose of research ...Results of calculation the recovery voltages conditioned by capacitive currents switching-off by high voltage vacuum and auto-compression （SF6） circuit-breakers are presented in the article. The purpose of research was evaluating the maximum values of recovery voltages and also studying the dependence of recovery voltages on some influencing factors, especially on type of circuit-breaker presented in numerical models with its dielectric strength restoration law, chopping current and operation time. The research was carried out with using computer simulation.展开更多
文摘By using LPCVD SiO 2 and poly silicon as sacrificial layer and cantilever respectively,a poly silicon micromachined RF MEMS(radio frequency microelectronic mechanical system) switch is fabricated.During the fabrication process,the stress of poly silicon is released to prevent poly silicon membrane from bending,and the issue of compatibility between RF switch and IC process technology is also resolved.The low residual tensile stress poly silicon cantilever is obtained by the optimization.The switch is tested,and the preliminary test results show:the pull down voltage is 89V,and the switch speed is about 5μs.The switch provides the potential to build a new fully monolithic integrated RF MEMS for radar and communications applications.
文摘Results of calculation the recovery voltages conditioned by capacitive currents switching-off by high voltage vacuum and auto-compression （SF6） circuit-breakers are presented in the article. The purpose of research was evaluating the maximum values of recovery voltages and also studying the dependence of recovery voltages on some influencing factors, especially on type of circuit-breaker presented in numerical models with its dielectric strength restoration law, chopping current and operation time. The research was carried out with using computer simulation.
