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基于晶格结构的单晶硅异向腐蚀的计算机模拟 被引量:1
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作者 康建初 韩秋菊 尹宝林 《计算机工程与应用》 CSCD 北大核心 2001年第18期141-143,共3页
单晶硅异向腐蚀技术是制造三维MEMS微结构的重要加工技术。由于单晶硅异向腐蚀加工过程具有低成本和可用于大批量生产的特点,因而得到了广泛的应用。但由于加工是在微米/纳米尺度上进行,使得加工过程难以控制,加工结果难以观测,因... 单晶硅异向腐蚀技术是制造三维MEMS微结构的重要加工技术。由于单晶硅异向腐蚀加工过程具有低成本和可用于大批量生产的特点,因而得到了广泛的应用。但由于加工是在微米/纳米尺度上进行,使得加工过程难以控制,加工结果难以观测,因此传统的MEMS微结构的研制需要经过反复的试制和修改过程,使得研制周期长、生产质量难以保证。引入加工过程计算机模拟技术,可望大大地缩短MEMS微结构的研制周期,提高其产品质量。文章在研究单晶硅异向腐蚀机制的基础上,建立了基于晶格结构的腐蚀过程模型,模型较好地解决了模拟过程中高时空复杂性的关键技术问题,可在微机上运行,并取得了良好的模拟效果。 展开更多
关键词 晶格结构 单晶硅 异向腐蚀 MEMS 加工工艺 计算机模拟
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Anisotropy of localized corrosion in 7050-T7451 Al alloy thick plate 被引量:4
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作者 宋丰轩 张新明 +2 位作者 刘胜胆 韩念梅 李东锋 《Transactions of Nonferrous Metals Society of China》 SCIE EI CAS CSCD 2013年第9期2483-2490,共8页
The corrosion anisotropy of 7050-T7451 A1 alloy thick plate in NaCI solution was investigated by immersion tests, slow strain rate testing (SSRT) technique, potentiodynamic and anode polarization measurements, optic... The corrosion anisotropy of 7050-T7451 A1 alloy thick plate in NaCI solution was investigated by immersion tests, slow strain rate testing (SSRT) technique, potentiodynamic and anode polarization measurements, optical microscropy (OM) and scanning electron microscopy (SEM) observations. The results show that the thick plate exhibits severe corrosion anisotropy due to the microstructure anisotropy. The observations of immersion surfaces together with the analysis of polarization curves reveal that the differences of the corrosion morphologies on various sections in this material are mainly related to the area fraction of the remnant second phase, and higher area fraction displays worst corrosion resistance. The stress corrosion cracking (SCC) susceptibility of different directions relative to the rolling direction is assessed by SSRT technique, ranked in the order: S direction 〉 L direction 〉 T direction. The result show that the smaller the grain aspect ratio, the better the corrosion resistance to SCC. 展开更多
关键词 7050-T7451 A1 alloy thick plate microstructure corrosion anisotropy
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Fabrication of Silicon Crystal-Facet-Dependent Nanostructures by Electron-Beam Lithography
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作者 杨香 韩伟华 +2 位作者 王颖 张杨 杨富华 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2008年第6期1057-1061,共5页
Silicon crystal-facet-dependent nanostructures have been successfully fabricated on a (100)-oriented silicon-oninsulator wafer using electron-beam lithography and the silicon anisotropic wet etching technique. This ... Silicon crystal-facet-dependent nanostructures have been successfully fabricated on a (100)-oriented silicon-oninsulator wafer using electron-beam lithography and the silicon anisotropic wet etching technique. This technique takes advantage of the large difference in etching properties for different crystallographic planes in alkaline solution. The minimum size of the trapezoidal top for those Si nanostructures can be reduced to less than 10nm. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) observations indicate that the etched nanostructures have controllable shapes and smooth surfaces. 展开更多
关键词 silicon nanostructure anisotropic wet etching electron-beam lithography
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