A realistic kinetic Monte Carlo (KMC) simulation model with physical parameters is developed,which wellreproduces the heteroepitaxial growth of multilayered Ni thin film on Cu(lO0) surfaces at room temperature.The eff...A realistic kinetic Monte Carlo (KMC) simulation model with physical parameters is developed,which wellreproduces the heteroepitaxial growth of multilayered Ni thin film on Cu(lO0) surfaces at room temperature.The effectsof mass transport between interlayers and edge diffusion of atoms along the islands are included in the simulation model,and the surface roughness and the layer distribution versus total coverage are calculated.Specially,the simulation modelreveals the transition of growth mode with coverage and the difference between the Ni heteroepitaxy on Cu(100) andthe Ni homoepitaxy on Ni(100).Through comparison of KMC simulation with the real scanning tunneling microscopy(STM) experiments,the Ehrlieh-Schwoebel (ES) barrier E_(es) is estimated to be 0.184±0.02 eV for Ni/Cu(100) systemwhile 0.28 eV for Ni/Ni(100).The simulation also shows that the growth mode depends strongly on the thickness ofthin film and the surface temperature,and the critical thickness of growth mode transition & dependent on the growthcondition such as surface temperature and deposition flux as well.展开更多
基金the State Key Basic Research Development Project of China under Grant No.2006CB708612the Key Project of Science and Technology of Zhejiang Province under Grant No.2007C21120
文摘A realistic kinetic Monte Carlo (KMC) simulation model with physical parameters is developed,which wellreproduces the heteroepitaxial growth of multilayered Ni thin film on Cu(lO0) surfaces at room temperature.The effectsof mass transport between interlayers and edge diffusion of atoms along the islands are included in the simulation model,and the surface roughness and the layer distribution versus total coverage are calculated.Specially,the simulation modelreveals the transition of growth mode with coverage and the difference between the Ni heteroepitaxy on Cu(100) andthe Ni homoepitaxy on Ni(100).Through comparison of KMC simulation with the real scanning tunneling microscopy(STM) experiments,the Ehrlieh-Schwoebel (ES) barrier E_(es) is estimated to be 0.184±0.02 eV for Ni/Cu(100) systemwhile 0.28 eV for Ni/Ni(100).The simulation also shows that the growth mode depends strongly on the thickness ofthin film and the surface temperature,and the critical thickness of growth mode transition & dependent on the growthcondition such as surface temperature and deposition flux as well.
