周期数对异质对称结构光子晶体透射特性的调制

利用传输矩阵法理论,研究周期数对异质镜像对称结构光子晶体(A^kB^gC^l)~mD^n(C^lB^gA^k)~m透射特性的调制作用,结果表明:随着周期数m增大,透射谱中透射峰的带宽会越来越窄,但透射峰数目及其透射率保持不变;随着周期数n增大,透射谱中透射峰的数目增多,而且透射峰的条数与n数值有关;随着周期数k或g增大,透射谱中透射峰向长波方向移动,且透射峰数目减少及透射峰所处的禁带变窄,但透射峰的带宽却变宽;随着周期数l增大,透射谱中透射峰向长波方向移动,且透射峰数目减少,透射峰及其所处的禁带均变窄。周期数对异质镜像对称结构光子晶体透射特性的调制规律,可为光学滤波或光学开关的设计提供理论指导。

非对称异质波导半导体激光器结构

提出了一种非对称异质波导半导体激光器外延结构,即通过优化选择材料体系和结构厚度,对器件外延层的P侧限制结构和N侧限制结构分别设计,从而降低器件的电压损耗,使其满足高输出功率以及高的电光转换效率的要求.从载流子的输运和限制等微观机制出发,对器件的主要输出特性进行了理论分析和数值模拟,并以此为根据设计和制作了一种1060 nm In Ga As/Ga As单量子阱非对称异质波导结构半导体激光器,并对器件的主要输出特性进行了测试.实验结果表明,非对称异质结构是降低器件的电压降、增大限制结构对注入载流子的限制,提高半导体激光器电光转换效率的有效措施.

Zero-Magnetic-Field Spin Splitting of Polaron＇s Ground State Energy Induced by Rashba Spin-Orbit Interaction

We study theoretically the ground state energy of a polaron near the interface of a polar-polar semiconductor by considering the Rashba spin-orbit （SO） coupling with the Lee-Low-Pines intermediate coupling method. Our numerical results show that the Rashba SO interaction originating from the inversion asymmetry in the heterostructure splits the ground state energy of the polaron. The electron area/density and vector dependence of the ratio of the SO interaction to the total ground state energy or other energy composition are obvious. One can see that even without any external magnetic field, the ground state energy can be split by the Rashba SO interaction, and this split is not a single but a complex one. Since the presents of the phonons, whose energy gives negative contribution to the polaron＇s, the spin-splitting states of the polaron are more stable than electron＇s.

Properties of a Bound Polaron under a Perpendicular Magnetic Field

We investigate the influence of a perpendicular magnetic field on a bound polaron near the interface of a polar-polar semiconductor with Rashba effect. The external magnetic field strongly changes the ground state binding energy of the polaron and the Rashba spin-orbit （SO） interaction originating from the inversion asymmetry in the heterostructure splits the ground state binding energy of the bound polaron. In this paper, we have shown how the ground state binding energy will be with the change of the external magnetic field, the location of a single impurity, the wave vector of the electron and the electron areal density, taking into account the SO coupling. Due to the presence of the phonons, whose energy gives negative contribution to the polaron＇s, the spin-splitting states of the bound polaron are more stable, and we find that in the condition of week magnetic field, the Zeeaman effect can be neglected.

Propagating Optical Phonon Modes and Their Electron-Phonon Interaction Hamiltonians in Asymmetric Wurtzite Nitride Semiconductor Quantum Wells

Within the framework of the dielectric continuum model and Loudon ＇s uniaxial crystal model, the properties of frequency dispersion of the propagating （PR） optical phonon modes and the coupling functions of electron-PR phonons interaction in an asymmetrical wurtzite quantum well （QW） are deduced and analyzed via the method of electrostatic potential expanding. Numerical calculation on an asymmetrical Alo.25Gao.75N/GaN/Alo.15Gao.ssN wurtzite QW were performed. The results reveal that there are infinite branches of PR phonon modes in the systems. The behaviors of frequency forbidden of PR modes in the asymmetric QWs have been clearly observed. The mathematical and physical origins for these features have been analyzed in depth. The PR optical phonon branches have been distinguished and labelled reasonably in terms of the oscillating properties of the PR modes in the well-layer material. Moreover, the amplitudes and frequency properties of the electron-PR modes coupling functions in the barrier and well materials have also been analyzed from both of the mathematical and physical viewpoints.