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氧化锌/硫化锌异质纳米线结构和电子性质比较研究(英文)
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作者 陈红霞 谢建明 《计算物理》 CSCD 北大核心 2014年第4期486-494,共9页
用第一性原理方法系统研究氧化锌/硫化锌超晶格纳米线和核壳结构纳米线的结构和电子性质.结构优化后,氧化锌/硫化锌异质结构纳米线和纯氧化锌或硫化锌纳米线结构相似.对于两种异质结构纳米线,能带结构显示他们都是直接带隙半导体.对于... 用第一性原理方法系统研究氧化锌/硫化锌超晶格纳米线和核壳结构纳米线的结构和电子性质.结构优化后,氧化锌/硫化锌异质结构纳米线和纯氧化锌或硫化锌纳米线结构相似.对于两种异质结构纳米线,能带结构显示他们都是直接带隙半导体.对于氧化锌/硫化锌超晶格纳米线,随着径向厚度的增加,能带变的越来越水平.对于核壳结构纳米线,分波态密度显示它们都是II型异质结构.研究有助于理解这类异质结构纳米线以及它们在电子发动机及光伏设备方面的应用. 展开更多
关键词 密度泛函理论 异质纳米线 结构 电子性质
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气体吸附对硅锗异质结纳米线电子结构与光学性质的影响
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作者 顾芳 陆春玲 +2 位作者 刘清惓 张加宏 朱涵 《原子与分子物理学报》 北大核心 2024年第4期63-70,共8页
基于密度泛函理论体系下的广义梯度近似(GGA),采用第一性原理方法探讨了沿[112]晶向的硅锗异质结纳米线作为气体传感器检测CO,CO_(2)和Cl2的能力,着重计算了其吸附气体分子前后的吸附能、能带结构与光学性质.几何结构优化计算表明:不同... 基于密度泛函理论体系下的广义梯度近似(GGA),采用第一性原理方法探讨了沿[112]晶向的硅锗异质结纳米线作为气体传感器检测CO,CO_(2)和Cl2的能力,着重计算了其吸附气体分子前后的吸附能、能带结构与光学性质.几何结构优化计算表明:不同硅锗组分的[112]晶向的硅锗纳米线对CO,CO_(2)和Cl_(2)分子的吸附能的绝对值在0.001 eV至1.36 eV之间,其中Si_(24)Ge_(36)H_(32)对CO_(2)气体的吸附能最大,气敏性能最好.能带结构计算表明:吸附CO和CO_(2)分子的[112]晶向硅锗纳米线能带的简并度明显减小,带隙变化较小;而吸附Cl2分子后的价带顶与导带底之间产生了杂质能级使其带隙减小.光学性质计算表明:Si_(24)Ge_(36)H_(32)纳米线吸附CO, CO_(2)和Cl_(2)分子后的光学性质差异明显,主要体现在吸收谱的范围及吸收峰的峰值上,上述研究结果为[112]晶向Si_(24)Ge_(36)H_(32)纳米线可作为气体传感器敏感材料提供了一定的理论依据. 展开更多
关键词 硅锗异质纳米线 气体吸附 电子结构 光学性质
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等离子体增强型ZnO基纳米线异质结阵列光电探测器
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作者 吴茴 彭嘉隆 +5 位作者 江金豹 李晗升 徐威 郭楚才 张检发 朱志宏 《红外与激光工程》 EI CSCD 北大核心 2024年第3期184-192,共9页
低维ZnO基光电探测器具有高响应性和高光子吸收能力。然而,ZnO较窄的吸收范围以及较低的光生载流子寿命限制了低维ZnO材料在光电子学中的潜在应用。该研究展示了一种零维(0D)金属纳米等离子体增强氧化锌纳米线(ZnO)-硒化锌(ZnSe)异质结... 低维ZnO基光电探测器具有高响应性和高光子吸收能力。然而,ZnO较窄的吸收范围以及较低的光生载流子寿命限制了低维ZnO材料在光电子学中的潜在应用。该研究展示了一种零维(0D)金属纳米等离子体增强氧化锌纳米线(ZnO)-硒化锌(ZnSe)异质结阵列的新型光电探测器。与基于单纯ZnO纳米线阵列的探测器件比较表明,该探测器具有优异的光电响应性能。在可见光作用下,该器件的响应度和平均上升(下降)时间分别为1.7 mA/W和1.812 ms(1.803 ms),在10 h连续测试中表现出优异的稳定性,为开发高性能光电探测器提供了一种低成本、可规模化的方法,有望在可穿戴设备、光通信系统、环境传感器等多方面得到应用。 展开更多
关键词 等离子体增强 ZNO纳米线 纳米线异质 光电探测器
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金辅助催化方法制备GaAs和GaAs/InGaAs纳米线结构的形貌表征及生长机理研究 被引量:1
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作者 苑汇帛 李林 +7 位作者 曾丽娜 张晶 李再金 曲轶 杨小天 迟耀丹 马晓辉 刘国军 《物理学报》 SCIE EI CAS CSCD 北大核心 2018年第18期300-307,共8页
利用金(Au)辅助催化的方法,通过金属有机化学气相沉积技术制备了GaAs纳米线及GaAs/InGaAs纳米线异质结构.通过对扫描电子显微镜(SEM)测试结果分析,发现温度会改变纳米线的生长机理,进而影响形貌特征.在GaAs纳米线的基础上制备了高质量... 利用金(Au)辅助催化的方法,通过金属有机化学气相沉积技术制备了GaAs纳米线及GaAs/InGaAs纳米线异质结构.通过对扫描电子显微镜(SEM)测试结果分析,发现温度会改变纳米线的生长机理,进而影响形貌特征.在GaAs纳米线的基础上制备了高质量的纳米线轴、径向异质结构,并对生长机理进行分析. SEM测试显示, GaAs/InGaAs异质结构呈现明显的"柱状"形貌与衬底垂直, InGaAs与GaAs段之间的界面清晰可见.通过X射线能谱对异质结样品进行了线分析,结果表明在GaAs/In GaAs轴向纳米线异质结构样品中,未发现明显的径向生长.从生长机理出发分析了在GaAs/InGaAs径向纳米线结构制备过程中伴随有少许轴向生长的现象. 展开更多
关键词 金辅助催化 金属有机化学气相沉积 GaAs纳米线 GaAs/InGaAs纳米线异质结构
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ZnO/ZnSe Ⅱ型同轴纳米线光学性质的模拟研究
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作者 郑晅丽 吴志明 +1 位作者 曹艺严 孔丽晶 《物理实验》 2017年第2期1-6,共6页
利用有限时域差分方法研究了纳米线直径、阵列周期和AZO衬底对ZnO/ZnSe同轴纳米线阵列光学性质的影响,并通过二维光学模式分析阐明了光吸收的物理机制.模拟结果表明:衬底对吸收增强的程度有限且较弱;适中的填充因子将更有利于ZnO/ZnSe... 利用有限时域差分方法研究了纳米线直径、阵列周期和AZO衬底对ZnO/ZnSe同轴纳米线阵列光学性质的影响,并通过二维光学模式分析阐明了光吸收的物理机制.模拟结果表明:衬底对吸收增强的程度有限且较弱;适中的填充因子将更有利于ZnO/ZnSe纳米线阵列的光吸收;较大直径的纳米线阵列可以支持更多模式的光传播,吸收率可显著增强.而决定此异质结阵列在带隙以上吸收率的物理机制为短波长波段的周期性阵列的衍射效应及长波长波段与传导模相关的单根纳米线尺寸效应. 展开更多
关键词 Ⅱ型异质结同轴纳米线阵列 ZnO/ZnSe 光学性质 有限时域差分
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硫化锌与硫化锌/氧化锌异质结纳米线的化学气相沉积法制备与表征 被引量:4
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作者 谢云龙 钟国 杜高辉 《化学学报》 SCIE CAS CSCD 北大核心 2012年第10期1221-1226,共6页
介绍一种利用石墨还原快速制备大量硫化锌纳米线的方法,并分别合成了超晶格型、双轴型、核/壳型的硫化锌/氧化锌异质结纳米线.所合成的硫化锌纳米线存在六方纤锌矿和立方闪锌矿两种晶型,纳米线长度达几十微米,直径在20~50 nm,直径均匀... 介绍一种利用石墨还原快速制备大量硫化锌纳米线的方法,并分别合成了超晶格型、双轴型、核/壳型的硫化锌/氧化锌异质结纳米线.所合成的硫化锌纳米线存在六方纤锌矿和立方闪锌矿两种晶型,纳米线长度达几十微米,直径在20~50 nm,直径均匀且产量很高.在具有双轴型的硫化锌/氧化锌异质结中,首次发现具有超结构特征的氧化锌.HRTEM分析表明,硫化锌/氧化锌超晶格异质结界面为ZB-ZnS(111)//ZnO(0001),而核/壳型异质结界面为W-ZnS(0001)//ZnO(0001),这3个晶面分别为各自晶体的极性面,即所合成的硫化锌/氧化锌异质结中极性面相互平行.对ZnS和ZnS/ZnO异质结的生长机制进行了探讨,并对硫化锌纳米线与硫化锌/氧化锌异质结的光学性质进行了分析. 展开更多
关键词 硫化锌 氧化锌 异质纳米线 生长机制 界面
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InAs/GaAs和InAs/InxGa1-xAs/GaAs纳米线异质结构的生长研究 被引量:2
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作者 叶显 黄辉 +4 位作者 任晓敏 郭经纬 黄永清 王琦 张霞 《物理学报》 SCIE EI CAS CSCD 北大核心 2011年第3期421-426,共6页
利用金辅助金属有机化学气相沉淀法(MOCVD)在GaAs(111)B衬底上分别制备了InAs/GaAs和InAs/InxGa1-xAs/GaAs(0≤x≤1)纳米线异质结构.实验结果显示,直接生长在GaAs纳米线上的InAs纳米线生长方向杂乱或者沿着GaAs纳米线侧壁向衬底方向生长... 利用金辅助金属有机化学气相沉淀法(MOCVD)在GaAs(111)B衬底上分别制备了InAs/GaAs和InAs/InxGa1-xAs/GaAs(0≤x≤1)纳米线异质结构.实验结果显示,直接生长在GaAs纳米线上的InAs纳米线生长方向杂乱或者沿着GaAs纳米线侧壁向衬底方向生长,生长的含有InxGa1-xAs组分渐变缓冲段的InAs/InxGa1-xAs/GaAs三段式纳米线异质结构在轴向上串接生长而形成双异质结构.通过插入三元化合物InxGa1-xAs渐变缓冲段可以有效的克服界面能差异和晶格失配带来的负面影响,提高纳米线的晶体质量和生长可控性. 展开更多
关键词 纳米线异质结构 INXGA1-XAS 组分渐变缓冲层 金属有机化学气相沉淀法
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CuO/ZnO量子点异质结及同轴纳米线异质结构的研制 被引量:2
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作者 马利明 李金钗 《武汉大学学报(理学版)》 CAS CSCD 北大核心 2011年第3期215-219,共5页
采用离子束溅射技术和热氧化工艺,对预先制备的ZnO纳米线表面进行纳米CuO修饰,研究了不同溅射工艺条件下对形成的CuO/ZnO纳米线异质结构的影响,通过控制溅射参数成功地合成出不同CuO量子点尺寸和分布密度的CuO/ZnO量子点异质结和CuO为... 采用离子束溅射技术和热氧化工艺,对预先制备的ZnO纳米线表面进行纳米CuO修饰,研究了不同溅射工艺条件下对形成的CuO/ZnO纳米线异质结构的影响,通过控制溅射参数成功地合成出不同CuO量子点尺寸和分布密度的CuO/ZnO量子点异质结和CuO为壳层的CuO/ZnO同轴纳米线异质结构.将X射线衍射仪(XRD)、扫描电子显微镜(SEM)和透射电子显微镜(TEM)用于研究样品的结构和形貌.实验结果表明,溅射在ZnO纳米线表面的Cu膜的厚度对形成的CuO/ZnO异质结构起着重要的作用.在Cu膜适度较薄时,获得了直径仅5 nm、分布较均匀的高密度(2.05×1010mm-2)CuO/ZnO量子点异质结;而Cu膜较厚时,形成的是CuO/ZnO同轴纳米线异质结构.利用高分辨透射电子显微镜(HRTEM)进一步对量子点异质结和同轴纳米线异质结的界面晶体结构进行了研究. 展开更多
关键词 CuO/ZnO 量子点异质 同轴纳米线异质结构
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一维Co-CdSe异质结纳米线的磁耦合及双功能性研究
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作者 申豪哲 苏轶坤 汤皎宁 《稀有金属材料与工程》 SCIE EI CAS CSCD 北大核心 2020年第11期3914-3918,共5页
利用多孔阳极氧化铝模板辅助法,在Co电解液和CdSe电解液的双槽体系中用直流电沉积法交替沉积合成一维多段Co-CdSe金属-半导体异质结纳米线。分别用扫描电子显微镜(SEM)、X射线衍射(XRD)仪、振动样品磁强计(VSM)、紫外可见分光光度计(UV-... 利用多孔阳极氧化铝模板辅助法,在Co电解液和CdSe电解液的双槽体系中用直流电沉积法交替沉积合成一维多段Co-CdSe金属-半导体异质结纳米线。分别用扫描电子显微镜(SEM)、X射线衍射(XRD)仪、振动样品磁强计(VSM)、紫外可见分光光度计(UV-Vis)以及光致发光光谱仪(PL)对异质结纳米线的形貌、结构、磁学及光学特性进行表征。结果表明,Co-CdSe异质结纳米线分层明显,且同时以面心立方结构存在。Co-CdSe异质结纳米线拥有与单质金属Co纳米线相同的磁矫顽力,同时,异质结纳米线也表现优异的光学性能。 展开更多
关键词 电沉积 Co-CdSe异质纳米线 矫顽力
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Preparation of hierarchical CuO@TiO_2 nanowire film and its application in photoelectrochemical water splitting
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作者 Shuai ZHANG Xue-bo CAO +2 位作者 Jun WU Lian-wen ZHU Li GU 《Transactions of Nonferrous Metals Society of China》 SCIE EI CAS CSCD 2016年第8期2094-2101,共8页
A new kind of self-standing CuO@TiO2 nanowires (NWs) film with hierarchical feature was prepared by a three-step protocol consisting of hydrothermal reaction, electroless plating, and branched growth processes. This h... A new kind of self-standing CuO@TiO2 nanowires (NWs) film with hierarchical feature was prepared by a three-step protocol consisting of hydrothermal reaction, electroless plating, and branched growth processes. This heterostructured CuO@TiO2 NWs film demonstrates the favorable physical properties in the photoelectrochemical cell (PEC) water splitting, such as the hierarchical surface, the extended optical absorption range, and the rapid interface charge transfer kinetics. Under the illumination of the simulated solar light, the pristine TiO2 NWs film only attains a photocurrent density of 0.12 mA/cm2 at 1.0 V versus reversible hydrogen electrode (RHE). Significantly, the CuO@TiO2 NWs film can yield a dramatically increased photocurrent density of 0.56 mA/cm2 at the same applied voltage. Furthermore, amperometric I?t tests of the CuO@TiO2 NWs film reveal satisfactory stability. All the above characteristics of this heterostructured CuO@TiO2 NWs film indicate its great potential in the water splitting applications with solar visible light. 展开更多
关键词 water splitting PHOTOANODE heterostructured nanowires CUO TiO2
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Enhanced visible-light-driven photocatalytic activities of 0D/1D heterojunction carbon quantum dot modified CdS nanowires
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作者 Zhiwei Chen Chang Feng +6 位作者 Weibing Li Zhiyong Sun Jian Hou Xiangbo Li Likun Xu Mingxian Sun Yuyu Bu 《Chinese Journal of Catalysis》 SCIE EI CAS CSCD 北大核心 2018年第4期841-848,共8页
Zero‐dimensional carbon dots(0D C‐dots)and one‐dimensional sulfide cadmium nanowires(1D CdS NWs)were prepared by microwave and solvothermal methods,respectively.A series of heterogeneous photocatalysts that consist... Zero‐dimensional carbon dots(0D C‐dots)and one‐dimensional sulfide cadmium nanowires(1D CdS NWs)were prepared by microwave and solvothermal methods,respectively.A series of heterogeneous photocatalysts that consisted of 1D CdS NWs that were modified with 0D C‐dots(C‐dots/CdS NWs)were synthesized using chemical deposition methods.The mass fraction of C‐dots to CdS NWs in these photocatalysts was varied.The photocatalysts were characterized using X‐ray diffraction,scanning electron microscopy,transmission electron microscopy,X‐ray photoelectron spectroscopy,and ultraviolet‐visible spectroscopy.Their photocatalytic performance for the spitting of water and the degradation of rhodamine B(RhB)under visible light irradiation were investigated.The photocatalytic performance of the C‐dots/CdS NWs was enhanced when compared with that of the pure CdS NWs,with the 0.4%C‐dots/CdS NWs exhibiting the highest photocatalytic activity for the splitting of water and the degradation of RhB.The enhanced photocatalytic activity was attributed to a higher carrier density because of the heterojunction between the C‐dots and CdS NWs.This heterojunction improved the electronic transmission capacity and promoted efficient separation of photogenerated electrons and holes. 展开更多
关键词 Semiconductor photocatalysis HETEROJUNCTION CdS nanowire Carbon quantum dot Water splitting
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Wavelength-tunable infrared light emitting diode based on ordered ZnO nanowire/Si1-xGex alloy heterojunction 被引量:2
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作者 Taiping Zhang Renrong Liang +3 位作者 Lin Dong Jing Wang Jun Xu Caofeng Pan 《Nano Research》 SCIE EI CAS CSCD 2015年第8期2676-2685,共10页
A novel infrared light emitting diode (LED) based on an ordered p-n heterojunction built of a p-Si1-xGe/alloy and n-ZnO nanowires has been developed. The electroluminescence (EL) emission of this LED is in the inf... A novel infrared light emitting diode (LED) based on an ordered p-n heterojunction built of a p-Si1-xGe/alloy and n-ZnO nanowires has been developed. The electroluminescence (EL) emission of this LED is in the infrared range, which is dominated by the band gap of Si1-xGex alloy. The EL wavelength variation of the LED shows a red shift, which increases with increasing mole fraction of Ge. With Ge mole fractions of 0.18, 0.23 and 0.29, the average EL wavelengths are around 1,144, 1,162 and 1,185 nm, respectively. The observed magnitudes of the red shifts are consistent with theoretical calculations. Therefore, by modulating the mole fraction of Ge in the Si1-xGex alloy, we can adjust the band gap of the SiGe film and tune the emission wavelength of the fabricated LED. Such an IR LED device may have great potential applications in optical communication, environmental monitoring and biological and medical analyses. 展开更多
关键词 ZnO nanowire SiGe alloy infrared light emittingdiode wavelength-tunable
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Super-aligned films of sub-1 nm Bi_(2)O_(3)-polyoxometalate nanowires as interlayers in lithiumsulfur batteries 被引量:6
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作者 Simin Zhang Haodong Shi +3 位作者 Junwang Tang Wenxiong Shi Zhong-Shuai Wu Xun Wang 《Science China Materials》 SCIE EI CAS CSCD 2021年第12期2949-2957,共9页
Sub-1 nm nanowires(SNWs) can not only be processed like polymers due to their polymer-analogue properties but also show multifunctions owing to their well-manipulated compositions and structures. Rationally designed a... Sub-1 nm nanowires(SNWs) can not only be processed like polymers due to their polymer-analogue properties but also show multifunctions owing to their well-manipulated compositions and structures. Rationally designed and engineered multicomponent heterostructure SNWs can further enhance their multifunction performance while it is very challenging to achieve such SNWs at sub-nanoscale.Herein, we synthesized Bi_(2)O_(3)-polyoxometalate heterostructure SNWs(PMB SNWs), and fabricated super-aligned PMB SNWs films(S-PMB SNWs films), which can serve as interlayers to efficiently suppress lithium polysulfide(LPS)shuttling, intrinsically promote the redox kinetics of the LPS conversion and substantially protect the Li anode. The lithium-sulfur(Li-S) battery with the S-PMB SNWs film as the interlayer showcases an ultralow capacity decay rate with 0.013% per cycle over 850 cycles. This study demonstrates the potential of heterostructure SNWs to improve the performance of Li-S batteries. 展开更多
关键词 sub-1 nm nanowires polymer-resembling films lithium-ion batteries interlayer
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GaAs/AlGaAs heterostructure nanowires studied by cathodoluminescence
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作者 Jessica Bolinsson Martin Ek +5 位作者 Johanna Tragardh Kilian Mergenthaler Daniel Jacobsson Mats-Erik Pistol Lars Samuelson Anders Gustafsson 《Nano Research》 SCIE EI CAS CSCD 2014年第4期473-490,共18页
In this report we explore the structural and optical properties of GaAs/A1GaAs heterostructure nanowires grown by metalorganic vapour phase epitaxy using gold seed-particles. The optical studies were done by low-tempe... In this report we explore the structural and optical properties of GaAs/A1GaAs heterostructure nanowires grown by metalorganic vapour phase epitaxy using gold seed-particles. The optical studies were done by low-temperature cathodo- luminescence (CL) in a scanning electron microscope (SEM). We perform a systematic investigation of how the nanowire growth-temperature affects the total photon emission, and variations in the emission energy and intensity along the length of the nanowires. The morphology and crystal structures of the nanowires were investigated using SEM and transmission electron microscopy (TEM). In order to correlate specific photon emission characteristics with variations in the nanowire crystal structure directly, TEM and spatially resolved CL measurements were performed on the same individual nanowires. We found that the main emission energy was located at around 1.48 eV, and that the emission intensity was greatly enhanced when increasing the GaAs nanowire core growth temperature. The data strongly suggests that this emission energy is related to rotational twins in the GaAs nanowire core. Our measurements also show that radial overgrowth by GaAs on the GaAs nanowire core can have a deteriorating effect on the optical quality of the nanowires. Finally, we conclude that an in situ pre-growth annealing step at a sufficiently high temperature significantly improves the optical quality of the nanowires. 展开更多
关键词 GaAs/AlGaAs core shellnanowires metalorganic vapourphase epitaxy (MOVPE) CATHODOLUMINESCENCE twin defects transmission electronmicroscopy
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Huge metastable axial strain in ultrathin heteroepitaxial vertically aligned nanowires
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作者 Vivien Schuler Francisco Javier Bonilia +10 位作者 Dominique Demaille Alessandro Coati Alina Vlad Yves Garreau Michele Sauvage-Simkin Anastasiia Novikova Emiliano Fonda Sarah Hidki Victor Etgens Franck Vidal Yunlin Zheng 《Nano Research》 SCIE EI CAS CSCD 2015年第6期1964-1974,共11页
Strain engineering is a powerful tool to tailor the physical properties of materials coherently stacked in an epitaxial heterostructure. Such an approach, applied to the mature field of planar heteroepitaxy, has yield... Strain engineering is a powerful tool to tailor the physical properties of materials coherently stacked in an epitaxial heterostructure. Such an approach, applied to the mature field of planar heteroepitaxy, has yielded a variety of new phenomena and devices. Recently, heteroepitaxial vertically aligned nanocomposites have emerged as alternatives to planar structures. Owing to the peculiar geometry of such nanoarchitectures, efficient strain control can be achieved, opening the way to novel functionalities. In this paper, we report a very large tensile axial strain in epitaxial transition metal nanowires embedded in an oxide matrix. We show that axial strains in excess of 1.5% can be sustained over a large thickness (a few hundred nanometers) in epitaxial nanowires having ultrasmall diameters (-3-6 nm). The axial strain depends on the diameter of the nanowires, reflecting its epitaxial nature and the balance of interface and elastic energies. Furthermore, it is experimentally shown that such strain is metastable, in agreement with the calculations performed in the framework of the Frenkel-Kontorova model. The diameter dependence and metastability provide effective ways to control the strain, an appealing feature for the design of functional nanoarchitectures. 展开更多
关键词 SELF-ASSEMBLY HETEROEPITAXY NANOWIRES strain
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Fabrication and properties of well-ordered arrays of single-crystalline NiSi2 nanowires and epitaxial NiSi2/Si heterostructures
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作者 Chenfu Chuang Shaoliang Cheng 《Nano Research》 SCIE EI CAS CSCD 2014年第11期1592-1603,共12页
In this study, we reported the design, fabrication, and characterization of well- ordered arrays of vertically-aligned, epitaxial NiSi2/Si heterostructures and single- crystalline NiSi2 nanowires on (001)Si substrat... In this study, we reported the design, fabrication, and characterization of well- ordered arrays of vertically-aligned, epitaxial NiSi2/Si heterostructures and single- crystalline NiSi2 nanowires on (001)Si substrates. The epitaxial NiSi2 with {111} facets was found to be the first and the only silicide phase formed inside the Si nanowires after annealing at a temperature as low as 300℃. Upon annealing at 500 ℃ for 4 h, the residual parts of Si nanowires were completely consumed and the NiSi2/Si heterostructured nanowires were transformed to fully silicided NiSi2 nanowires. XRD, TEM and SAED analyses indicated that all the NiSi2 nanowires were single crystalline and their axial orientations were parallel to the [001] direction. The obtained vertically-aligned NiSi2 nanowires, owing to their well-ordered arrangement, single-crystalline structure, and low effective work function, exhibit excellent field-emission properties with a very low turn-on field of 1.1 V/m. The surface wettability of the nanowires was found to switch from hydrophobic to hydrophilic after the formation of NiSi2 phase and the measured water contact angle decreased with increasing extent of Ni silicidation. The increased hydrophilicity can be explained by the Wenzel model. The obtained results present the exciting prospect that the new approach proposed here will provide the capability to fabricate other highly-ordered, vertically-aligned fully silicided nanowire arrays and may offer potential applications in constructing vertical silicide-based nanodevices. 展开更多
关键词 nanosphere lithography Si nanowire NiSi2 nanowire field emission WETTABILITY
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