In this article, we report the first experimental demonstration of the three-phase-shifted （3PS） DFB semiconductor laser with buried heterostructure based on the Reconstruction-Equivalent-Chirp （REC） technique. Th...In this article, we report the first experimental demonstration of the three-phase-shifted （3PS） DFB semiconductor laser with buried heterostructure based on the Reconstruction-Equivalent-Chirp （REC） technique. The simulation results show that the performances of the equivalent 3PS DFB semiconductor laser are nearly the same as those of the true 3PS laser. Compared with the quarter-wave-phase shift （QWS） DFB semiconductor laser, the 3PS DFB semiconductor laser shows better single-longitude-mode （SLM） property even at high injection current with high temperature. However, it only changes the ~un-level sampling structures but the seed grating is uniform using the REC tech- nique. Therefore, its fabrication cost is low.展开更多
基金supported by the National Natural Science Foundation of China(Grant No.61090392)the National Hi-Tech Research and Development Program of China("863"Project)(Grant No.2011AA010300)the Key Programs of the Ministry of Education of China(Grant No.20100091110005)
文摘In this article, we report the first experimental demonstration of the three-phase-shifted （3PS） DFB semiconductor laser with buried heterostructure based on the Reconstruction-Equivalent-Chirp （REC） technique. The simulation results show that the performances of the equivalent 3PS DFB semiconductor laser are nearly the same as those of the true 3PS laser. Compared with the quarter-wave-phase shift （QWS） DFB semiconductor laser, the 3PS DFB semiconductor laser shows better single-longitude-mode （SLM） property even at high injection current with high temperature. However, it only changes the ~un-level sampling structures but the seed grating is uniform using the REC tech- nique. Therefore, its fabrication cost is low.
