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异面结构GaAs光导开关耐压特性研究 被引量:3
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作者 李寅鑫 苏伟 刘娟 《传感器与微系统》 CSCD 北大核心 2009年第6期16-17,21,共3页
光导开关用于产生高功率脉冲,提高光导开关的耐压能力可有效提高器件的输出功率。用SILVACO软件对共面和异面电极结构的GaAs光导开关进行了仿真分析,比较了两者的击穿电压,指出异面开关耐压性能优于共面开关。对设计制作的3mm间隙宽度的... 光导开关用于产生高功率脉冲,提高光导开关的耐压能力可有效提高器件的输出功率。用SILVACO软件对共面和异面电极结构的GaAs光导开关进行了仿真分析,比较了两者的击穿电压,指出异面开关耐压性能优于共面开关。对设计制作的3mm间隙宽度的GaAs光导开关进行了耐压特性试验,并结合模拟结果进行分析。模拟结果和试验结果表明:和共面电极结构相比,异面结构的光导开关具有更高的耐压能力,击穿电场可达7.67 kV/mm。 展开更多
关键词 光导开关 异面开关 SILVACO模拟 耐压特性
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Reversible optical control of the metal-insulator transition across the epitaxial heterointerface of a VO_(2)/Nb:TiO_(2) junction
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作者 Yuanjun Yang Guilin Wang +18 位作者 Wenyu Huang Cangmin Wang Yingxue Yao Xiaoli Mao Hui Lin Ting Zhang Huaili Qiu Zhongjun Li Hui Zhang Yuewei Yin Jinhua Guo Yong Guan Wensheng Yan Zhenlin Luo Chongwen Zou Yangchao Tian Gang Xiao Xiaoguang Li Chen Gao 《Science China Materials》 SCIE EI CAS CSCD 2021年第7期1687-1702,共16页
Optical control of exotic properties in strongly correlated electron materials is very attractive owing to their potential applications in optical and electronic devices.Herein,we demonstrate a vertical heterojunction... Optical control of exotic properties in strongly correlated electron materials is very attractive owing to their potential applications in optical and electronic devices.Herein,we demonstrate a vertical heterojunction made of a correlated electron oxide thin film VO_(2) and a conductive 0.05 wt% Nb-doped TiO_(2) single crystal,whose metal-insulator transition(MIT)across the nanoscale heterointerface can be efficiently modulated by visible light irradiation.The magnitude of the MIT decreases from ~350 in the dark state to ~7 in the illuminated state,obeying a power law with respect to the light power density.The junction resistance is switched in a reversible and synchronous manner by turning light on and off.The optical tunability of it is also exponentially proportional to the light power density,and a 320-fold on/off ratio is achieved with an irradiance of 65.6 mW cm^(-2) below the MIT temperature.While the VO_(2) thin film is metallic above the MIT temperature,the optical tunability is remarkably weakened,with a one-fold change remaining under light illumination.These results are co-attributed to a net reduction(~15 meV)in the apparent barrier height and the photocarrier-injection-induced metallization of the VO_(2) heterointerface through a photovoltaic effect,which is induced by deep defect level transition upon the visible light irradiance at low temperature.Additionally,the optical tunability is minimal,resulting from the quite weak modulation of the already metallic band structure in the Schottky-type junction above the MIT temperature.This work enables a remotely optical scheme to manipulate the MIT,implying potential uncooled photodetection and photoswitch applications. 展开更多
关键词 metal-insulator transition VO2 thin film optical control strongly correlated electron material PHOTOSWITCH
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