微型硅基弯曲板波器件

介绍了基于ZnO压电薄膜的微型弯曲板波(FPW)器件的设计与制作。为减小薄膜的应力,器件采用LTO/ZnO/LTO/Si3N4多层复合板结构,并采用直流磁控溅射工艺制备ZnO压电薄膜,在压电复合板结构上沉积两对叉指电极,分别用于Lamb波的激发和接收。X射线衍射分析表明,沉积的ZnO薄膜C轴高度择优;扫描电子显微镜分析表明,制备的ZnO薄膜平整、致密,晶粒生长呈现明显的柱状结构;通过分析制备的高次谐波体声波谐振器(HBAR)器件性能来间接检验ZnO压电薄膜的电学性能,HBAR器件的品质因子较高,表明薄膜有较好的压电性能。利用安捷伦E5071C网络分析仪检测FPW器件的频率响应,结果表明反对称A0模式Lamb波的实测中心频率与理论计算的频率结果基本一致。

基于弯曲板波的延迟线振荡器的ANSYS仿真

针对复合板结构中弯曲板波谐振频率计算相对复杂的问题,建立并分析了基于弯曲板波延迟线振荡器的理论模型,计算得到A0(0阶反对称)模式板波的谐振频率为41 MHz;为了验证理论分析的结果,利用有限元软件ANSYS建立了基于弯曲板波的延迟线振荡器的3D有限元模型,并对其进行了谐响应分析以及瞬态动力学分析。谐响应分析得到A0模式的谐振频率为37.2 MHz,与理论计算结果的相对误差为9.3%;瞬态动力学分析得到A0模式的谐振频率为39.1 MHz,与理论计算结果的相对误差为4.6%。计算和仿真为基于弯曲板波的延迟线振荡器的结构设计提供了重要的依据。

Propagation of flexural waves in phononic crystal thin plates with linear defects

The band structures of flexural waves in a phononic crystal thin plate with straight, bending or branching linear defects are theoretically investigated using the supercell technique based on the improved plane wave expansion method. We show the existence of an absolute band gap of the perfect phononic crystal and linear defect modes inside the gap caused by localization of flexural waves at or near the defects. The displacement distributions show that flexural waves can transmit well along the straight linear defect created by removing one row of cylinders from the perfect phononic crystals for almost all the frequencies falling in the band gap, which indicates that this structure can act as a high efficiency waveguide. However, for bending or branching linear defects, there exist both guided and localized modes, and therefore the phononic crystals could be served as waveguides or filters.