库车前陆盆地强挤压应力条件下的测井电阻率校正方法

对于异常高压和强挤压条件下的库车前陆盆地,地应力常造成地层电阻率曲线值异常增大,水层以高阻气层的假象出现,导致利用电阻率测井资料识别储层流体性质存在多解性,给测井解释评价带来极大的困难。本文从实际情况出发,对强挤压应力条件影响下的电阻率校正方法进行了探索性研究,提出了基于理论分析和实验数据模拟的电阻率校正方法,最后通过压汞资料分析J函数求取的饱和度与校正后电阻率计算的饱和度进行对比,验证校正电阻率的可靠性。结果表明,校正后电阻率能更真实地反映地层电性特征,可进一步提高研究区深层裂缝性砂岩储层的测井解释符合率。

Influence of Device Narrowing on HALO-pMOSFETs' Degradation Under V_g= V_d/2 Stress Mode

The degradation characteristics of both wide and narrow devices under V _g= V _d/2 stress mode is investigated.The width-enhanced device degradation can be seen with devices narrowing.The main degradation mechanism is interface state generation for pMOSFETs with different channel width.The cause of the width-enhanced device degradation is attributed to the combination of width-enhanced threshold voltage and series resistance.