1.关于“相频特性”对于有阻尼单自由度系统,在简谐激振力Q sin p_t作用下,其稳态响应相位角为ψ=tg^(-1)(2ζλ)/(1-λ~2) (1.1)其中λ=P/ω.,ζ=c/2mω..ω.为相应无阻尼系统的固有频率.由式(1.1)得到(?)与λ的关系,即所谓“相频特性...1.关于“相频特性”对于有阻尼单自由度系统,在简谐激振力Q sin p_t作用下,其稳态响应相位角为ψ=tg^(-1)(2ζλ)/(1-λ~2) (1.1)其中λ=P/ω.,ζ=c/2mω..ω.为相应无阻尼系统的固有频率.由式(1.1)得到(?)与λ的关系,即所谓“相频特性”(图1).在一些教科书[1][2]等中。展开更多
In HFCVD system the substrate temperature is a key factor which deeply affects the quality of diamond films. Th e magnitude and the variation of the substrate temperature must be limited in a suitable range to depo...In HFCVD system the substrate temperature is a key factor which deeply affects the quality of diamond films. Th e magnitude and the variation of the substrate temperature must be limited in a suitable range to deposit diamond films of uniform thickness over large areas. In this paper, the hot filament parameters are investigated on the basi s of GAs to realize a good substrate temperature profile. Computer simulations d emonstrate that on parameters optimized by GAs a uniform substrate temperatur e field can be formed over a relatively large circle area with R s=10 cm.展开更多
文摘1.关于“相频特性”对于有阻尼单自由度系统,在简谐激振力Q sin p_t作用下,其稳态响应相位角为ψ=tg^(-1)(2ζλ)/(1-λ~2) (1.1)其中λ=P/ω.,ζ=c/2mω..ω.为相应无阻尼系统的固有频率.由式(1.1)得到(?)与λ的关系,即所谓“相频特性”(图1).在一些教科书[1][2]等中。
文摘In HFCVD system the substrate temperature is a key factor which deeply affects the quality of diamond films. Th e magnitude and the variation of the substrate temperature must be limited in a suitable range to deposit diamond films of uniform thickness over large areas. In this paper, the hot filament parameters are investigated on the basi s of GAs to realize a good substrate temperature profile. Computer simulations d emonstrate that on parameters optimized by GAs a uniform substrate temperatur e field can be formed over a relatively large circle area with R s=10 cm.