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飞秒激光脉冲在石英玻璃表面的微刻蚀
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作者 吴朝新 蒋红兵 《量子电子学报》 CAS CSCD 北大核心 2002年第6期559-559,共1页
关键词 飞秒激光脉冲 石英玻璃表面 微刻蚀
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基于初次电流分布的电解微刻蚀均匀性研究
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作者 韦鸿钰 郭钟宁 王冠 《电加工与模具》 2014年第3期48-50,55,共4页
在电解刻蚀中,阳极表面的电流密度由装置的几何尺寸、加工参数、极化情况等决定,其中,几何要素决定加工间隙的初次电流密度分布,主要影响刻蚀结果。采用有限单元法数值模拟不同尺寸阴极、辅助电极、加工间隙等对加工区域初次电流分布的... 在电解刻蚀中,阳极表面的电流密度由装置的几何尺寸、加工参数、极化情况等决定,其中,几何要素决定加工间隙的初次电流密度分布,主要影响刻蚀结果。采用有限单元法数值模拟不同尺寸阴极、辅助电极、加工间隙等对加工区域初次电流分布的影响,确定了均匀性随各几何因素的变化趋势。 展开更多
关键词 电解微刻蚀 电流密度 均匀性
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载气对固体表面光化学微刻蚀的影响
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作者 吴鼎祥 《光子学报》 EI CAS CSCD 1996年第9期799-802,共4页
本文主要讨论利用准分子激光对铜薄膜印刷电路板进行微刻蚀过程中,载气对微刻蚀的影响。
关键词 准分子激光 光化学反应 微刻蚀 集成电路
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锑化镓的光助微刻蚀及其表面氧化物的研究 被引量:2
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作者 曹阳 陆寿蕴 李爱珍 《物理化学学报》 SCIE CAS CSCD 北大核心 1996年第3期224-228,共5页
用电化学和光电化学方法研究锑化镓表面的腐蚀以及锑化镓表面氧化膜的生成和溶解.锑化镓电极在一定电势下生成的氧化腹,用俄歇能谱证明,其主要成分为难溶的氧化锑,此氧化膜的存在抑制了锑化镓的进一步腐蚀,同时亦使锑化镓的半导体... 用电化学和光电化学方法研究锑化镓表面的腐蚀以及锑化镓表面氧化膜的生成和溶解.锑化镓电极在一定电势下生成的氧化腹,用俄歇能谱证明,其主要成分为难溶的氧化锑,此氧化膜的存在抑制了锑化镓的进一步腐蚀,同时亦使锑化镓的半导体光电化学性能大为减弱.通过激光微刻蚀及电子显微镜的观察,在刻蚀剂中添加酒石酸、柠檬酸和氢氟酸等试剂,可使刻蚀图形得到改善.实验研究了锑化镓的平带电势的测定. 展开更多
关键词 半导体电化学 光助微刻蚀 锑化镓 表面氧化膜
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激光微刻蚀柔性红外热敏悬浮微桥研究
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作者 余荣 《传感器世界》 2007年第5期10-12,共3页
本文研究使用激光微刻蚀方法制作红外热敏悬浮微桥的新工艺。用激光微刻蚀法制作了铂/聚酰亚胺热敏悬浮微桥,对微桥初样的热敏特性进行了测试,测试结果证实所制作的热敏微桥具有较好的热隔离性能。
关键词 激光微刻蚀 红外微测辐射热计 热敏悬浮微桥 柔性基板
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GaN基半导体材料的157nm激光微刻蚀 被引量:9
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作者 戴玉堂 徐刚 +1 位作者 崔健磊 白帆 《中国激光》 EI CAS CSCD 北大核心 2009年第12期3138-3142,共5页
采用157 nm波长准分子激光,对LED-GaN半导体薄膜进行了刻蚀试验研究。探讨了GaN基半导体材料的基本刻蚀特性和刻蚀机理。结果表明,157 nm激光在能量密度高于2.5 J/cm2时,刻蚀速率可达50 nm/pulse以上。以低于16 Hz脉冲频率和高于0.25 mm... 采用157 nm波长准分子激光,对LED-GaN半导体薄膜进行了刻蚀试验研究。探讨了GaN基半导体材料的基本刻蚀特性和刻蚀机理。结果表明,157 nm激光在能量密度高于2.5 J/cm2时,刻蚀速率可达50 nm/pulse以上。以低于16 Hz脉冲频率和高于0.25 mm/min的扫描速度进行激光直写刻蚀时,可以获得Ra30 nm以下的表面粗糙度。采用扫描刻蚀方法,可以加工出75°左右的刻蚀壁面。实验也证明157 nm激光在三维微结构加工方面具有较大的潜力。单光子吸收电离引起的光化学反应是157 nm激光刻蚀GaN基材料的主要机理。 展开更多
关键词 光学制造 157nm准分子激光 GAN基材料 微刻蚀
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透明材料的深紫外激光三维微刻蚀工艺 被引量:6
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作者 戴玉堂 徐刚 崔健磊 《应用激光》 CSCD 北大核心 2009年第5期411-414,共4页
57nm深紫外激光因其波长短且具有较高的光子能量,被视为较理想的微刻蚀工具之一。介绍了157nm深紫外激光的刻蚀机理,并利用先进的157nm激光微加工设备,进行了一系列微刻蚀实验。研究了激光工艺参数对石英玻璃的刻蚀效率和表面粗糙度的影... 57nm深紫外激光因其波长短且具有较高的光子能量,被视为较理想的微刻蚀工具之一。介绍了157nm深紫外激光的刻蚀机理,并利用先进的157nm激光微加工设备,进行了一系列微刻蚀实验。研究了激光工艺参数对石英玻璃的刻蚀效率和表面粗糙度的影响,进行了多种三维微结构的加工试验,证实了157nm激光微刻蚀工艺在制备MOEMS器件方面的实用性。 展开更多
关键词 深紫外激光 三维微刻蚀 石英玻璃 微器件
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CF_(4)-GMET和G-PT处理对AR+AF涂层耐磨性能的影响
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作者 陈立 郑学军 +3 位作者 贺楚才 黄乐 彭井泉 左滨槐 《表面技术》 EI CAS CSCD 北大核心 2024年第13期104-117,共14页
目的在兼顾涂层抗反射性和疏水性的前提下,通过强化抗反射(AR)多层复合膜系与抗指纹(AF)涂层之间的黏附力,提升复合涂层的机械耐久性能。方法采用磁控溅射法在玻璃衬底上沉积AR多层复合膜系,首创性地采用CF_(4)气体微刻蚀(CF_(4)-Gas Mi... 目的在兼顾涂层抗反射性和疏水性的前提下,通过强化抗反射(AR)多层复合膜系与抗指纹(AF)涂层之间的黏附力,提升复合涂层的机械耐久性能。方法采用磁控溅射法在玻璃衬底上沉积AR多层复合膜系,首创性地采用CF_(4)气体微刻蚀(CF_(4)-Gas Micro-etching Treatment,CF_(4)-GMET)与石墨等离子体(Graphite Plasma Treatment,G-PT),依次对AR膜系表面进行处理后,将AF试剂蒸镀附于AR层表面并冷却,即可得到具有超强耐磨性的AF/CF_(4)-GMET&G-PT SiO_(2)/AR抗反射疏水涂层。结果CF_(4)-GMET对AR表层SiO_(2)处理后,其表面“柱状尖峰”消失,得到低粗糙度针状表面,并增大了SiO_(2)与AF涂层的接触比表面积。G-PT处理大幅提高了表层SiO_(2)亲水性,从而使得SiO_(2)表面黏附功增大。经2道工艺处理后,SiO_(2)表面粗糙度降低,黏附功先降后升为最大值,蒸镀AF疏水涂层后界面结合最为稳定,耐磨性能显著增强。在负载为1000 g的钢丝绒摩擦10000次后,抗反射疏水涂层的水接触角(WCA)从117.7°下降至113.6°,磨损率仅为3.4%,耐磨性能极佳。结论对AR膜系表层SiO_(2)进行CF_(4)-GMET和G-PT处理,能显著提高抗反射疏水涂层的耐磨性能,而对光学透过率基本无影响。 展开更多
关键词 疏水性 CF_(4)气体微刻蚀 石墨等离子体处理 抗反射疏水涂层 耐磨性
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n型砷化镓微区光电化学腐蚀过程 被引量:1
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作者 王卫江 王江涛 +1 位作者 金承和 陆寿蕴 《物理化学学报》 SCIE CAS CSCD 北大核心 1993年第3期386-391,共6页
在n-GaAs电解液界面,用聚焦He-Ne 激光照射,使n-GaAs 表面发生微区光电化学腐蚀,用计算机控制步进马达,使试样在X-Y二维方向扫描移动,能在晶片上得到刻蚀点直径2μm 的刻蚀图案.研究了激光相对光强,KOH、H_2SO_4、KCl 等刻蚀剡的浓度,... 在n-GaAs电解液界面,用聚焦He-Ne 激光照射,使n-GaAs 表面发生微区光电化学腐蚀,用计算机控制步进马达,使试样在X-Y二维方向扫描移动,能在晶片上得到刻蚀点直径2μm 的刻蚀图案.研究了激光相对光强,KOH、H_2SO_4、KCl 等刻蚀剡的浓度,光腐蚀的时间,电极电位等因素对腐蚀点的直径和深度的影响,通过实验数据找出腐蚀过程的规律,并用光电化学原理进行解释. 展开更多
关键词 砷化镓 光电化学腐 半导体微刻蚀
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一种提升电路板键合可靠性的前处理方法
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作者 王朋 王芳 +4 位作者 范国莹 付兴辰 尉子健 白红美 李保第 《通讯世界》 2024年第2期163-165,共3页
为解决微波组件生产过程中多次使用钎焊与胶粘工艺,带来的助焊剂氧化残留、导电胶油剂沾污镀金焊盘和电路板加工生产过程引入的油墨沾污镀金焊盘等问题。对键合焊盘的前处理方法进行研究,提出一种激光微刻蚀键合焊盘的前处理方法,对电... 为解决微波组件生产过程中多次使用钎焊与胶粘工艺,带来的助焊剂氧化残留、导电胶油剂沾污镀金焊盘和电路板加工生产过程引入的油墨沾污镀金焊盘等问题。对键合焊盘的前处理方法进行研究,提出一种激光微刻蚀键合焊盘的前处理方法,对电路板键合界面进行100%激光微刻蚀处理,使得键合界面“归一化”,提升键合焊点质量。彻底消除由于键合界面清理不彻底,导致虚焊、脱焊、键合强度偏低的现象,确保引线键合的可靠性,以期为微波组件生产工艺人员解决键合界面沾污问题提供参考。 展开更多
关键词 金丝球焊 激光微刻蚀 引线拉力 焊点剪切力 等离子清洗
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一种聚酰亚胺超低热导红外热敏悬浮微桥 被引量:1
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作者 余荣 陈学康 +3 位作者 杨建平 曹生珠 吴敢 王瑞 《微纳电子技术》 CAS 2007年第10期952-956,共5页
热导极为微小的热敏悬空微桥结构的制作是集成非致冷热成像探测阵列热敏感单元研究的核心。由于没有现成的将聚酰亚胺制成微桥的工艺,采用准分子激光微刻蚀技术,使用聚酰亚胺材料,并采用铂作为敏感材料来制作微桥。对所制作的铂/聚酰亚... 热导极为微小的热敏悬空微桥结构的制作是集成非致冷热成像探测阵列热敏感单元研究的核心。由于没有现成的将聚酰亚胺制成微桥的工艺,采用准分子激光微刻蚀技术,使用聚酰亚胺材料,并采用铂作为敏感材料来制作微桥。对所制作的铂/聚酰亚胺微桥原理性样件的初步测试表明,铂/聚酰亚胺微桥的热导约3.98×10-7W/K,与理论计算值接近。铂薄膜与聚酰亚胺微桥附着良好,工艺可行。在0~10V的驱动电压下可观察到铂/聚酰亚胺微桥样件明显的自热效应,其电加热响应时间小于100ms。 展开更多
关键词 非致冷红外探测 热敏悬浮微桥 激光微刻蚀 微机电系统
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Chemical etching process of copper electrode for bioelectrical impedance technology 被引量:2
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作者 周伟 宋嵘 +4 位作者 蒋乐伦 许文平 梁国开 程德才 刘灵蛟 《Transactions of Nonferrous Metals Society of China》 SCIE EI CAS CSCD 2012年第6期1501-1506,共6页
In order to obtain bioelectrical impedance electrodes with high stability, the chemical etching process was used to fabricate the copper electrode with a series of surface microstructures. By changing the etching proc... In order to obtain bioelectrical impedance electrodes with high stability, the chemical etching process was used to fabricate the copper electrode with a series of surface microstructures. By changing the etching processing parameters, some comparison experiments were performed to reveal the influence of etching time, etching temperature, etching liquid concentration, and sample sizes on the etching rate and surface microstructures of copper electrode. The result shows that the etching rate is decreased with increasing etching time, and is increased with increasing etching temperature. Moreover, it is found that the sample size has little influence on the etching rate. After choosing the reasonable etching liquid composition (formulation 3), the copper electrode with many surface microstructures can be obtained by chemical etching process at room temperature for 20 rain. In addition, using the alternating current impedance test of electrode-electrode for 24 h, the copper electrode with a series of surface microstructures fabricated by the etching process presents a more stable impedance value compared with the electrocardiograph (ECG) electrode, resulting from the reliable surface contact of copper electrode-electrode. 展开更多
关键词 bioelectrical impedance copper electrode chemical etching surface microstructures processing parameters
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UItrastructural Observation on Rat Spermatozoa Treatedwith Tripchlorolide(T_4) from Tripterygium wilfordii 被引量:1
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作者 党连凯 王英 +4 位作者 戴景峰 邱劲松 张树林 付广礼 孙亦彬 《Journal of Chinese Pharmaceutical Sciences》 CAS 1995年第4期205-211,共7页
Adult male rats were treated orally with monomer T_4(Tripchlorolide) isolated from Tripterygium wilfordii, at the dose of 50μg/kg/day,6 days/week for6 weeks.Ultrathin section and freeze etching replica of seminifero... Adult male rats were treated orally with monomer T_4(Tripchlorolide) isolated from Tripterygium wilfordii, at the dose of 50μg/kg/day,6 days/week for6 weeks.Ultrathin section and freeze etching replica of seminiferous tubules and epididymal spermatozoa were examined with elec-tron microscope. The results showed that the spemiogenesis was inhibited T_4 in seminiferous tu-bules. However,the damage and disruption of the spermatozoa were more serious in the epididymis.Damage of the structure and function ot microtubule and microfilament may be the chief reason for sperm damage. Sperm membrane was also very sensitive to the treatiment of monomer T_4. 展开更多
关键词 Tripterygium wilfordii Tripchlorolide(T_4) Rat SPERMATOZOA ULTRASTRUCTURE FREEZE-ETCHING
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低温等离子体处理技术在印刷电路板上的应用 被引量:6
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作者 毛志勇 《电子工业专用设备》 2003年第2期75-76,共2页
关键词 低温等离子体处理技术 印刷电路板 微刻蚀 表面清洁 沉积作用
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Fabrication of Ultra Deep Electrical Isolation Trenches with High Aspect Ratio Using DRIE and Dielectric Refill
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作者 朱泳 闫桂珍 +4 位作者 王成伟 杨振川 范杰 周健 王阳元 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2005年第1期16-21,共6页
A novel technique to fabricate ultra deep high aspect ratio electrical isolation trenches with DRIE and dielectric refill is presented.The relationship between trench profile and DRIE parameters is discussed.By optimi... A novel technique to fabricate ultra deep high aspect ratio electrical isolation trenches with DRIE and dielectric refill is presented.The relationship between trench profile and DRIE parameters is discussed.By optimizing DRIE parameters and RIE etching the trenches’ opening,the ideal trench profile is obtained to ensure that the trenches are fully refilled without voids.The electrical isolation trenches are 5μm wide and 92μm deep with 0.5μm thick oxide layers on the sidewall as isolation material.The measured I-V result shows that the trench structure has good electrical isolation performance:the average resistance in the range of 0~100V is more than 10 11Ω and no breakdown appears under 100V.This isolation trench structure has been used in fabrication of the bulk integrated micromachined gyroscope,which shows high performance. 展开更多
关键词 deep reactive ion etching electrical isolation trenches bulk microstructures monolithic integration
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线路形成不同前处理探讨
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作者 李忠 麻建华 《印制电路信息》 2018年第7期14-16,共3页
文章对细密线路PCB批量生产中线路前处理工艺进行探讨。对普通前处理方法及常见问题进行了分析,对不同前处理模式下的基本状况进行了测试,并对相应的性能指标进行统计。
关键词 微刻蚀 机械研磨 化学前处理 喷砂研磨
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Mechanism of gas-water flow at pore-level in aquifer gas storage 被引量:4
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作者 石磊 王皆明 +2 位作者 廖广志 熊伟 高树生 《Journal of Central South University》 SCIE EI CAS 2013年第12期3620-3626,共7页
By means of the pore-level simulation, the characteristics of gas-water flow and gas-water distribution during the alternative displacement of gas and water were observed directly from etched-glass micromodel. The res... By means of the pore-level simulation, the characteristics of gas-water flow and gas-water distribution during the alternative displacement of gas and water were observed directly from etched-glass micromodel. The results show that gas-water distribution styles are divided into continuous phase type and separate phase type. The water lock exists in pore and throat during the process of gas-water displacement, and it reduces the gas flow-rate and has some effects on the recovery efficiency during the operation of gas storage. According to the experimental results of aquifer gas storage in X area, the differences in available extent among reservoirs are significant, and the availability of pore space is 33% 45%. 展开更多
关键词 aquifer gas storage gas-water flow injection-withdrawal cycle etched-glass micromodel water lock
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Effects of Surface Etch Hole Fault on the Velocity Field in Microchannel Reactors 被引量:2
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作者 尤学一 李胜华 《Chinese Journal of Chemical Engineering》 SCIE EI CAS CSCD 2009年第6期919-924,共6页
Microchannel reactors are commonly used in micro-chemical technology. The performance of microreactors is greatly affected by the velocity field in the microchannel. The flow field is disturbed by the cylindrical etch... Microchannel reactors are commonly used in micro-chemical technology. The performance of microreactors is greatly affected by the velocity field in the microchannel. The flow field is disturbed by the cylindrical etch holes caused by air dust on the microchannel surface during its processing procedure. In this approach, a two-dimensional computational fluid dynamics (CFD) model is put forward to study the effect of etch holes on flow field. The influenced area of single or two concave etch holes is studied for the case of laminar flow. The hole diameter, the Reynolds number and the distance between the center of holes are found to have influences on the flow field. Numerical results indicate that the effects of etch hole on the flow field should be evaluated and the way of choosing the economic class of cleanroom for microreactor manufacture is presented. 展开更多
关键词 MICROCHANNEL processing faults etch holes computational fluid dynamics velocity field
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Transition of super-hydrophobic states of droplet on rough surface 被引量:2
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作者 叶霞 周明 +2 位作者 蒋大林 李健 蔡兰 《Journal of Central South University》 SCIE EI CAS 2010年第3期554-559,共6页
Twelve samples with periodic array square pillars microstructure were prepared on the silicon wafer by plasma etching techniques, on which space b of the square pillars increased from 5 to 60 μm. In order to study th... Twelve samples with periodic array square pillars microstructure were prepared on the silicon wafer by plasma etching techniques, on which space b of the square pillars increased from 5 to 60 μm. In order to study the effect ofb on the wettability of the rough surface, the effects of apparent contact angle (CA) and sliding angle (a) of the droplet on the rough surface were measured with the contact angle meter. The results show that the experimental values of CA well agree with the classical wetting theory and a decreases with the increase of b. Two drop shapes exist on the samples' surface, corresponding to the Cassie state and the Wenzel state respectively. The contact state in which a drop would settle depends typically on the size of b. On the role of gravitation, the irreversible transition of a drop from Cassie state to Wenzel state should occur at a certain space of the square pillars. Since the transition has implications on the application of super-hydrophobic rough surfaces, theoretically, the prediction of wetting state transition on square pillar array micro-structured surfaces provides an intuitionistic guidance for the design of steady superhydrophobic surfaces. 展开更多
关键词 square pillar microstructure wetting mode transition apparent contact angle sliding angle
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Fabrication of Silicon Microlens Arrays Using Ion Beam Milling
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作者 MAI Zhihong YI Xingjian ZHAO Xinrong(Huazhong University or Science and Technology, Wuhan 430074, CHN) 《Semiconductor Photonics and Technology》 CAS 1996年第1期61-65,共5页
A spherical mask for the fabrication of microlens arrays was prepared by melting photoresist, and the spherical photoresist shape was transferred into a silicon substrate using ion beam milling. The ion beam milling p... A spherical mask for the fabrication of microlens arrays was prepared by melting photoresist, and the spherical photoresist shape was transferred into a silicon substrate using ion beam milling. The ion beam milling process was computer simulated using the Sigmund ion beam sputtering theory of collision cascades. The experiment results show that microlens arrays can be effectively formed at low substrate temperature of less than 200 ℃.Shapes and dimensions of photoresist masks and silicon microlens arrays were examined by the scanning electron microscope and tested by the surface stylus measurement. 展开更多
关键词 Silicon Microlens Microlens Array Ion Beam Milling
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