Si基体二维深通道微孔列阵刻蚀技术

Si材料二维深通道微孔列阵是新型二维通道电子倍增器的基体,其可以采用感应耦合等离子体(ICP)刻蚀和光电化学(PEC)刻蚀等半导体工艺技术实现。简述了ICP工艺原理和实验方法,给出了微孔直径6～10μm、长径比约20、平均刻蚀速率约1.0μm/min的实验样品,指出了深通道内壁存在纵向条带不均匀分布现象、成因和解决途径;重点论述了微孔深通道列阵PEC刻蚀原理和实验方法,在优化的光电化学工艺参数下,得到了方孔边长3.0μm、中心距为6.0μm、深度约为160μm的n型Si基二维深通道微孔列阵基体样品,得出了辐照光强、Si基晶向与HF的质量分数是影响样品质量的结论,指出了光电化学刻蚀工艺的优越性。

硅基高长径比微孔列阵及其应用

介绍了硅基高长径比微孔列阵形成的多路感应耦合等离子体刻蚀和电化学刻蚀等半导体工艺技术,给出了实验系统、原理、方法和实验结果,指出了工艺中出现的新现象和亟待解决的新问题,阐述了其在二维通道电子倍增器-微通道板中的应用。

高纵横比微孔列阵的干刻工艺

本文简述了干法刻蚀的现状和Ｍｕｌｔｉｐｌｅｘ － ＩＣＰ 的结构原理， 给出了高纵横比微孔列阵的初刻实验结果，

Mutual coupling suppression of aperture coupled microstrip antenna array

A mutual coupling suppression method is proposed for microstrip antenna array by cutting four small semi-circle annular apertures on the metal plate. The structure of antenna array is composed of 2 × 2 four elements. The antenna consists of double layer dielectric, and it realizes circular polarization characteristics by cutting rectangular slot on circular patch in the direction of 45°, by using aperture coupling feeding and reverse feeding principle. There is 90＊ phase difference between adjacent antenna elements. Thus, it cuts off the coupling current field between the elements, suppresses the surface wave and reduces the mutual coupling by cutting four semi-circle annular apertures symmetrically on the metal plate. The simulation results show that after cutting four semi-circle annular apertures, the antenna array coupling coefficients decrease significantly, and the side and back lobe levels are suppressed effectively with the gain of antenna improved. So the proposed method is effective to suppress microstrip antenna array mutual coupling.

IC探针卡激光微孔加工系统与工艺开发研究

本文简单介绍半导体产业集成电路芯片测试用探针卡,分为以悬臂梁方式的环氧探针(Epoxy ring probe)、垂直探针(Vertical probe card)和微弹簧丝探针(Microspring probe card),以及基于微机电系统的MEMS probe card。采用半导体泵浦紫外固体激光(UV DPSSL 355nm),开发了激光微孔成型精细加工系统,运用新的光学设计思想开发了远心扫描物镜等光学元件,成功研制了紫外激光微加工光学系统,开展IC半导体芯片测试探针卡探针导向片微孔列阵成型工艺和材料特性研究,进一步研制开发了新型旋转打孔的电子光学系统。