某新冠疫苗项目软化预处理与微晶化学旁流水处理方案对比分析

某新冠疫苗项目有主管管径分别为DN 600和DN 350的两套循环冷却水系统。在设计阶段,有两套循环水水质处理方案(补充水软化预处理和旁流水处理)可供选择。经过充分分析论证,上海水质宜采用旁流水处理方案,不宜采用补充水软化预处理方案。

Strength and plasticity improvement induced by strong grain refinement after Zr alloying in selective laser-melted AlSiMg1.4 alloy

In order to enhance the mechanical properties of the selective laser-melted(SLM) high-Mg content AlSiMg1.4 alloy,the Zr element was introduced.The influence of Zr alloying on the processability,microstructure,and mechanical properties of the alloy was systematically investigated through performing microstructure analysis and tensile testing.It was demonstrated that the SLM-fabricated AlSiMg1.4-Zr alloy exhibited high process stability with a relative density of over 99.5% at various process parameters.Besides,the strong grain refinement induced by the primary Al3Zr particle during the melt solidification process simultaneously enhanced both the strength and plasticity of the alloy.The values for the yield strength,ultimate tensile strength,and elongation of the SLM-fabricated AlSiMg1.4-Zr were(343±3) MPa,(485±4) MPa,and(10.2±0.2)%,respectively,demonstrating good strengthplasticity synergy in comparison to the AlSiMg1.4 and other Al-Si-based alloys fabricated by SLM.

Doped-Chamber Deposition of Intrinsic Microcrystalline Silicon Thin Films and Its Application in Solar Cells

A series of microcrystalline silicon thin films were fabricated by very high frequency plasma enhanced chemical vapor deposition （VHF-PECVD） at different silane concentrations in a P chamber. Through analysis of the structural and electrical properties of these materials,we conclude that the photosensitivity slightly decreased then increased as the silane concentration increased,while the crystalline volume fraction indicates the opposite change. Results of XRD indicate that thin films have a （220） preferable orientation under certain conditions. Microcrystalline silicon solar cells with conversion efficiency 4. 7% and micromorph tandem solar cells 8.5% were fabricated by VHF-PECVD （p layer and i layer of microcrystalline silicon solar cells were deposited in P chamber）, respectively.

Correlations among stress corrosion cracking,grain-boundary microchemistry,and Zn content in high Zn-containing Al-Zn-Mg-Cu alloys

The correlations among the corrosion behaviour,grain-boundary microchemistry,and Zn content in Al-Zn-Mg-Cu alloys were studied using stress corrosion cracking(SCC)and intergranular corrosion(IGC)tests,combined with scanning electron microscopy(SEM)and high-angle angular dark field scanning transmission electron microscopy(HAADF-STEM)microstructural examinations.The results showed that the tensile strength enhancement of high Zn-containing Al-Zn-Mg-Cu alloys was mainly attributed to the high density nano-scale matrix precipitates.The SCC plateau velocity for the alloy with 11.0 wt.%Zn was about an order of magnitude greater than that of the alloy with 7.9 wt.%Zn,which was mainly associated with Zn enrichment in grain boundary precipitates and wide precipitates-free zones.The SCC mechanisms of different Zn-containing alloys were discussed based on fracture features,grain-boundary microchemistry,and electrochemical properties.

Isothermal annealing of cold-rolled Al-Mn-Fe-Si alloy with different microchemistry states

Microstructural evolution of a cold-rolled Al-Mn-Fe-Si alloy during annealing was studied. Except the as-cast variant, two other different homogenizations were considered, one gave a high density of fine dispersiods providing a considerable Zener drag influencing the softening behavior while the other gave a lower density of coarser dispersoid structure providing a much smaller drag effect. The gradual microstructural evolutions during annealing for the three variants were captured by interrupting annealing at different time. Effects of microchemistry state on recrystallization kinetics, recrystallized grain structure and texture were characterized by EBSD. It is demonstrated that the actual softening kinetics, final microstructure and texture are a result of delicate balance between processing condition and microchemistry state. Strong concurrent precipitation takes place in the case with high concentration of Mn in solid solution, which suppresses nucleation and retards recrystallization and finally leads to grain structure of coarse elongated grains dominated by a P texture component together with a ND-rotated cube component. On the contrary, when solute content of Mn is low and pre-existing dispersoids are relatively coarser, faster recrystallization kinetics is exhibited together with an equiaxed grain structure with mainly cube texture.

Effect of Nd addition on microstructure and tensile properties of laser additive manufactured TC11 titanium alloy

Single-layer and multilayer laser additive manufacturing(LAM)for TC11 alloy with different Nd additions was conducted and the effect of Nd addition on microstructure and properties was studied.With the addition of Nd,the aspect ratio of melting pools of single-layer specimens increases and the columnar-to-equiaxed transition occurs.The originalβgrain size andαplate width of TC11−1.0Nd are significantly reduced compared with those of pure TC11 specimens.It is proposed that the evenly distributed fine Nd_(2)O_(3) precipitates of about 1.51μm are formed preferentially during rapid solidification of melting pool,and they serve as heterogeneous nucleation particles to refine the microstructure in the subsequent solidification and solid-state phase transformation.Due to the multiple effects of Nd on the microstructure,the ultimate tensile strength of TC11−1.0Nd increases,while the yield strength,ductility and microhardness decrease compared with those of pure TC11.

Isothermal Crystallization Kinetics of Microencapsulated Polyethylene Glycol Particles

The microenapsulated polyethylene glycol （PEG） with different molecular weight by a fluidized coating method has been prepared and the crystallization behaviors of PEG particles in three-dimensional confined vohume were investigated by using differential scanning calorimetry （DSC） measurement. The results showed that the width of the crystallization peak of PEG increases and its height gradually diminishes in case that the PEG particles are microencapsulated. Compared with the non-microencapsulated PEG particles, the proportion of the first crystallization peak of microencapsulated PEG particle increases, and that of the second one decreases. The reason for the difference maybe is that the crystallization process of microencapsulated PEG particles is uniform and the crystallization ends when the spherulites touch the wall, thus the opportunity of producing the second crystallization peak was relatively reduced.

Fabrication of 3D structure by combining AFM and chemical etching on crystalline silicon surface

AFM is used for forming silicon dioxide as a layer (mask) on the silicon wafer surface (100) during the cutting process in ambient atmosphere. The silicon dioxide is made through reaction of silicon and oxygen in the atmosphere. As a result of the anisotropic behavior of single crystalline silicon, the etching rates in alkaline solution depend greatly on the various crystal orientations. The anisotropic etching behaviors in KOH solution and reasons of crystalline silicon are described. Effect of etching conditions such as etching temperature and KOH concentration of the alkaline solution on height of the micro-protuberances has been described.

Mapping the kinetics of hydrogen evolution reaction on Ag via pseudo-single-crystal scanning electrochemical cell microscopy

Elucidating the structure-activity relationship in electrocatalysis is of fundamental interest for electrochemical energy conversion and storage.However,the heterogeneity in the surface structure of electrocatalysts,including the presence of various facets,poses an analytical challenge in revealing the true structure-activity relationship because the activity is conventionally measured on ensemble,resulting in an averaged activity that cannot be unequivocally associated with a single structural motif.Scanning electrochemical cell microscopy(SECCM)[1]combined with colocalized electron backscatter diffraction(EBSD)offers a direct way to reveal the correlative local electrochemical and structural information.Herein,we measured the hydrogen evolution reaction(HER)activity on Ag and its dependence on the crystal orientation.From the combined EBSD and SECCM mapping,it is found that Ag grains closer to{111}show a higher exchange current density,while those closer to{110}show a lower Tafel slope.The Tafel slope is also found to decrease with the step density increase.The ability to measure the electrocatalytic activity under a high mass-transfer rate allows us to reveal the activity difference at a high current density(up to 200 mA/cm^(2)).The approach reported here can be expanded to other systems to reveal the nature of active sites of electrocatalysis.

FABRICATION OF PHOTONIC CRYSTAL WITH SUPERLATTICES

A novel technique was used to fabricate three-dimensional photonic crystals with superlattices. The super structure was fabricated by assembling monodispersed microspheres in the grooves of the scales of morpho butterfly, which makes the photonic crystal being composed of two kinds of different photonic structures (natural groove structure of butterfly wing and artificial microspherical colloids arrangement). The superstructural photonic crystal exhibits some unique optical properties different from both the butterfly wing and the colloidal crystal. The approach exhibited here provides a new way for fabricate photonic crystals with superlattices.

Simulation of gas phase reactions for microcrystalline silicon films fabricated by PECVD

We present a numerical gas phase reaction model for hydrogenated microcrystalline silicon(μc-Si:H) films from SiH4 and H2 gas mixtures with plasma enhanced chemical vapor deposition(PECVD).Under the typical μc-Si:H deposition conditions,the concentrations of the species in the plasma are calculated and the effects of silane fraction(SF=[SiH4]/[H2+SiH4]) are investigated.The results show that SiH3 is the key precursor for μc-Si:H films growth,and other neutral radicals,such as Si2H5,Si2H4 and SiH2,may play some roles in the film deposition.With the silane fraction increasing,the precursor concentration increases,but H atom concentration decreases rapidly,which results in the lower H/SiH3 ratio.

植酸水溶液中聚吡咯涂层在Cu基体上的制备及其在腐蚀防护中的应用

利用植酸作为电解质及掺杂剂,成功地在Cu基体表面制备了具有强效防腐特性的聚吡咯(PPy)涂层。采用原位电化学石英微晶分析天平(EQCM)分析技术对聚吡咯在Cu电极表面上的沉积过程进行了探讨,利用扫描电子显微镜(SEM)以及Fourier转换全反射-红外吸收光谱对制备的导电聚合物PPy涂层形貌与成分进行了表征,研究了涂层的抗腐蚀性能。结果表明,电聚合过程中,Cu基体表面首先沉积一层具有保护作用的Phytate-Cu盐层,可抑制基体进一步溶解并有助于聚吡咯的形核及长大。酸盐掺杂的聚吡咯涂层在3.5%(质量分数)NaCl溶液中对Cu基体表现出良好的防护性,pH值为4的弱酸性条件下制备的聚吡咯膜具有最好的耐蚀保护性能。EQCM-循环伏安结果证实,植酸根掺杂的聚吡咯呈现出阳离子选择透过特性,抑制了Cl-的扩散,并显著地提高了Cu基体的抗腐蚀特性。

Fabrication of iridium oxide neural electrodes at the wafer level

Electro-deposition, electrical activation, thermal oxidation, and reactive ion sputtering are the four primary methods to fabricate iridium oxide film. Among these methods, reactive ion sputtering is a commonly used method in standard micro-fabrication processes. In different sputtering conditions, the component, texture, and electrochemistry character of iridium oxide varies considerably. To fabricate the iridium oxide film compatible with the wafer-level processing of neural electrodes, the quality of iridium oxide film must be able to withstand the mechanical and chemical impact of post-processing, and simultaneously achieve good performance as a neural electrode. In this study, parameters of sputtering were researched and developed to achieve a balance between mechanical stability and good electrochemical characteristics of iridium oxide film on electrode. Iridium oxide fabricating process combined with fabrication flow of silicon electrodes, at wafer-level, is introduced to produce silicon based planar iridium oxide neural electrodes. Compared with bare gold electrodes, iridium oxide electrodes fabricated with this method exhibit particularly good electrochemical stability, low impedance of 386 kW at 1 kH z, high safe charge storage capacity of 3.2 m C/cm^2, and good impedance consistency of less than 25% fluctuation.

Optical visualization of MoS_2 grain boundaries by gold deposition

The grain boundaries（GBs） in continuous films or domains of MoS2 are vital to its optical and electrical properties. Almost all previous approaches for GBs visualization are based on microscopy and spectroscopy and only effective for domains with less than several micrometers in size. Here we report a simple method for the visualization of large GBs in MoS2 surface by optical microscope. Gold was deposited on the MoS2 grown by chemical vapor deposition,and then the GBs could be observed by optical microscope.Upon gold deposition on MoS2, the entire GBs of large-area MoS2 were clearly visualized using this method. To verify the result, the GBs were also characterized via scanning electron microscopy, transmission electron microscopy and atomic force microscopy. It showed the small particles of gold were clustered together on GBs, which had a larger binding energy than the inner regions. The method is universal and allows for the nondestructive identification of the GBs in any two dimensional materials with large area.

Integrated ionic sieving channels from engineering ordered monolayer two-dimensional crystallite structures

Atomically thin solid-state channels enabling selective molecular transport could potentially be used in a variety of separation and energy conversion applications.The density of channels,their height,distance and edge structure are the key factors that dramatically impact the selective transport performance.However,such channels with small constrictions and atomic precision have been limited to proof-ofconcept demonstrations based on microscale two-dimensional(2D)crystal stripes.Here,we report the engineering of highly ordered,scalable monolayer graphene crystallite arrays by chemical vapor deposition(CVD)method with a modified anisotropic etching approach.The size,shape,distance and edge structure of the graphene crystallite arrays in a large area could be delicately controlled through tailoring the synthetic parameters.This array structure can act as pillars to prop up a smooth single-crystal graphene film,and the fabricated integrated angstrom-size(3.4A)channels allow water transport but exclude hydrated ions,demonstrating potential in selective ionic sieving and nanofiltration practice.

Study of large area hydrogenated microcrystalline silicon p-layers for back surface field in crystalline silicon solar cells

A series of hydrogenated microcrystalline silicon （μc-Si：H） p-layers for back surface field in crystalline silicon solar cells were deposited on glass substrates by the developed large area （45 cm×45 cm） plasma enhanced chemical vapour deposition processor operating at 13.56 MHz and various values of source gas trimethylboron （TMB） to H2 flowratio. The influence of deposition parameters on the large area p-layer performance was intensively studied, as well as the thin film uniformity, optical, electrical and structural performances by Raman, PTIR, Ellipsometry, etc. Arrhenius and Tauc plots were used to discuss the μc-Si：H thin film＇s activation energy and the defects state distribution. When amorphous-microcrystalline transition state was obtained, the deposited p-doped μc-Si：H layers showed specific resistance of 38.3 Ω^-1cm1 at the flowratio of 0.66% and high crystallinity of 45%-50% with no further treatment. The effect of source gas flowratio, deposition rate, and source gas partial pressure on μc-Si：H thin film＇s performance was also investigated.

Improved hetero-interface passivation by microcrystalline silicon oxide emitter in silicon heterojunction solar cells

In this paper, we tion （SHJ） solar cells with prepared silicon heterojunc- the structure of p-c-Si/i-a- SiOx：H/n-μc-SiOx：H （a-SiOx：H, oxygen rich amorphous silicon oxide; μc-SiOx：H, microcrystalline silicon oxide） by plasma-enhanced chemical vapor deposition method. The influence of the n-μc-SiOx：H emitter thickness on the heterointerface passivation in SHJ solar cells was investi- gated. With increasing thickness, the crystallinity of the emitter as well as its dark conductivity increases. Mean- while, the effective minority carrier lifetime （teff） of the SHJ solar cell precursors at low injection level shows a pronounced increase trend, implying that an improved field effect passivation is introduced as the emitter is deposited. And, an increased μTelf is also observed at entire injection level due to the interfacial chemical passivation improved by the hydrogen diffusion along with the emitter deposition. Based on the analysis on the external quantum effi- ciency of the SHJ solar cells, it can be expected that the high efficient SHJ solar cells could be obtained by improving the heterointerface passivation and optimizing the emitter deposition process.