A four-stage monolithic microwave integrated circuits （MMIC） low noise amplifier （LNA） operating from 23 to 36GHz is reported using commercially available 0.15μm PHEMT technology. The LNA is self-biased. To achie...A four-stage monolithic microwave integrated circuits （MMIC） low noise amplifier （LNA） operating from 23 to 36GHz is reported using commercially available 0.15μm PHEMT technology. The LNA is self-biased. To achieve a low noise characteristic, careful optimizations of gate width are performed to reduce gate resistance. Absorption circuits and an elaborate bias structure with a resistor-capacitor network are employed to improve stability. Multiple resonance points and negative feedback technologies are used to widen the bandwidth. Measurements show a noise figure （NF） of less than 2.0dB,and the lowest NF is only 1.6dB at a frequency of 31GHz. In the whole operation band,the LNA has a gain of higher than 26dB,and an input return loss and output return loss of more than 11 and 13dB,respectively. The output power at ldB compression gain of 36GHz is about 14dBm. The chip area is 2.4mm ×1mm.展开更多
A monolithic voltage controlled oscillator （VCO） based on negative resistance principle is presented uti-lizing commercially available InGaP/GaAs hetero-junction bipolar transistor （HBT） technology. This VCO is de...A monolithic voltage controlled oscillator （VCO） based on negative resistance principle is presented uti-lizing commercially available InGaP/GaAs hetero-junction bipolar transistor （HBT） technology. This VCO is de-signed for 5GHz-band wireless applications. Except for bypass and decoupled capacitors,no external component is needed for real application. Its measured output frequency range is from 4.17 to 4.56GHz,which is very close to the simulation one. And the phase noise at an offset frequency of 1MHz is -112dBc/Hz. The VCO core dissipates 15.5mW from a 3.3V supply,and the output power ranges from 0 to 2dBm. To compare with other oscillators,the figure of merit is calculated,which is about -173.2dBc/Hz. Meanwhile, the principle and design method of nega-tive resistance oscillator are also discussed.展开更多
Millimeter wave transistor technology is very important for MMIC design and fabrication.An InP HEMT with saw toothed source and drain is described.The pattern distortion due to the proximity effect of lithography is ...Millimeter wave transistor technology is very important for MMIC design and fabrication.An InP HEMT with saw toothed source and drain is described.The pattern distortion due to the proximity effect of lithography is a voided.High yield InP HEMT with good DC and RF performances is obtained. The device transconductance is 1050mS/mm,threshold voltage is -1 0V,and current gain cut off frequency is 120GHz.展开更多
A compact Ka-band monolithic microwave integrated circuit(MMIC) voltage controlled oscillator (VCO) with wide tuning range and high output power,which is based on GaAs PHEMT process,is presented.A method is introduced...A compact Ka-band monolithic microwave integrated circuit(MMIC) voltage controlled oscillator (VCO) with wide tuning range and high output power,which is based on GaAs PHEMT process,is presented.A method is introduced to reduce the chip size and to increase the bandwidth of operation.The procedure to design a MMIC VCO is also described here.The measured oscillating frequency of the MMIC VCO is 36±1.2GHz and the output power is 10±1dBm.The fabricated MMIC chip size is 1.3mm×1.0mm.展开更多
A two-stage monolithic low noise amplifier is developed for satellite communication applications,using a 0.5μm enhancement PHEMT technology. The on-chip matched amplifier employs lumped elements to reduce the circuit...A two-stage monolithic low noise amplifier is developed for satellite communication applications,using a 0.5μm enhancement PHEMT technology. The on-chip matched amplifier employs lumped elements to reduce the circuit size, and shows a 5012 noise figure less than 0.9dB, gain greater than 26dB, and return loss less than - 10dB in the S-C band range of 3.5 to 4. 3GHz. The noise figure obtained here is the best result ever reported to date of an MMIC LNA with a gain of more than 20dB for the S-C band frequency range. It is attributed to the low noise performance of the enhancement PHEMT transistor and minimized parasitic resistance of the input match network by a common series source inductor and a unique divided resistance at the drain.展开更多
A three-stage MMIC power amplifier operating from 6to 18GHz is fabricated using 0.25μm A1GaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor（PHEMT）.The amplifier isfully monolithic,with all matching,bi...A three-stage MMIC power amplifier operating from 6to 18GHz is fabricated using 0.25μm A1GaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor（PHEMT）.The amplifier isfully monolithic,with all matching,biasing,and DC block circuitry included on the chip.Thepower amplifier has an average power gain of 19dB over 6～18GHz.At operation frequenciesfrom 6 to 18GHz,the output power is above 33.3dBm,and the maximum output power of the MMICis 34.7dBm at 10Ghz.The input return loss is less than-10db and the out-put return is lessthan-6dB over operating frequency.This power amplifier has,to our knowledge,the best powergain flatness reported at C-X-Ku-band applications.展开更多
文摘A four-stage monolithic microwave integrated circuits （MMIC） low noise amplifier （LNA） operating from 23 to 36GHz is reported using commercially available 0.15μm PHEMT technology. The LNA is self-biased. To achieve a low noise characteristic, careful optimizations of gate width are performed to reduce gate resistance. Absorption circuits and an elaborate bias structure with a resistor-capacitor network are employed to improve stability. Multiple resonance points and negative feedback technologies are used to widen the bandwidth. Measurements show a noise figure （NF） of less than 2.0dB,and the lowest NF is only 1.6dB at a frequency of 31GHz. In the whole operation band,the LNA has a gain of higher than 26dB,and an input return loss and output return loss of more than 11 and 13dB,respectively. The output power at ldB compression gain of 36GHz is about 14dBm. The chip area is 2.4mm ×1mm.
文摘A monolithic voltage controlled oscillator （VCO） based on negative resistance principle is presented uti-lizing commercially available InGaP/GaAs hetero-junction bipolar transistor （HBT） technology. This VCO is de-signed for 5GHz-band wireless applications. Except for bypass and decoupled capacitors,no external component is needed for real application. Its measured output frequency range is from 4.17 to 4.56GHz,which is very close to the simulation one. And the phase noise at an offset frequency of 1MHz is -112dBc/Hz. The VCO core dissipates 15.5mW from a 3.3V supply,and the output power ranges from 0 to 2dBm. To compare with other oscillators,the figure of merit is calculated,which is about -173.2dBc/Hz. Meanwhile, the principle and design method of nega-tive resistance oscillator are also discussed.
文摘Millimeter wave transistor technology is very important for MMIC design and fabrication.An InP HEMT with saw toothed source and drain is described.The pattern distortion due to the proximity effect of lithography is a voided.High yield InP HEMT with good DC and RF performances is obtained. The device transconductance is 1050mS/mm,threshold voltage is -1 0V,and current gain cut off frequency is 120GHz.
文摘A compact Ka-band monolithic microwave integrated circuit(MMIC) voltage controlled oscillator (VCO) with wide tuning range and high output power,which is based on GaAs PHEMT process,is presented.A method is introduced to reduce the chip size and to increase the bandwidth of operation.The procedure to design a MMIC VCO is also described here.The measured oscillating frequency of the MMIC VCO is 36±1.2GHz and the output power is 10±1dBm.The fabricated MMIC chip size is 1.3mm×1.0mm.
文摘A two-stage monolithic low noise amplifier is developed for satellite communication applications,using a 0.5μm enhancement PHEMT technology. The on-chip matched amplifier employs lumped elements to reduce the circuit size, and shows a 5012 noise figure less than 0.9dB, gain greater than 26dB, and return loss less than - 10dB in the S-C band range of 3.5 to 4. 3GHz. The noise figure obtained here is the best result ever reported to date of an MMIC LNA with a gain of more than 20dB for the S-C band frequency range. It is attributed to the low noise performance of the enhancement PHEMT transistor and minimized parasitic resistance of the input match network by a common series source inductor and a unique divided resistance at the drain.
文摘A three-stage MMIC power amplifier operating from 6to 18GHz is fabricated using 0.25μm A1GaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor（PHEMT）.The amplifier isfully monolithic,with all matching,biasing,and DC block circuitry included on the chip.Thepower amplifier has an average power gain of 19dB over 6～18GHz.At operation frequenciesfrom 6 to 18GHz,the output power is above 33.3dBm,and the maximum output power of the MMICis 34.7dBm at 10Ghz.The input return loss is less than-10db and the out-put return is lessthan-6dB over operating frequency.This power amplifier has,to our knowledge,the best powergain flatness reported at C-X-Ku-band applications.
