A four-stage monolithic microwave integrated circuits （MMIC） low noise amplifier （LNA） operating from 23 to 36GHz is reported using commercially available 0.15μm PHEMT technology. The LNA is self-biased. To achie...A four-stage monolithic microwave integrated circuits （MMIC） low noise amplifier （LNA） operating from 23 to 36GHz is reported using commercially available 0.15μm PHEMT technology. The LNA is self-biased. To achieve a low noise characteristic, careful optimizations of gate width are performed to reduce gate resistance. Absorption circuits and an elaborate bias structure with a resistor-capacitor network are employed to improve stability. Multiple resonance points and negative feedback technologies are used to widen the bandwidth. Measurements show a noise figure （NF） of less than 2.0dB,and the lowest NF is only 1.6dB at a frequency of 31GHz. In the whole operation band,the LNA has a gain of higher than 26dB,and an input return loss and output return loss of more than 11 and 13dB,respectively. The output power at ldB compression gain of 36GHz is about 14dBm. The chip area is 2.4mm ×1mm.展开更多
A power amplifier MIC with power combining based on AlGaN/GaN HEMTs was fabricated and measured. The amplifier consists of four 10 × 120μm transistors. A Wilkinson splitters and combining were used to divide and...A power amplifier MIC with power combining based on AlGaN/GaN HEMTs was fabricated and measured. The amplifier consists of four 10 × 120μm transistors. A Wilkinson splitters and combining were used to divide and combine the power. By biasing the amplifier at VDS = 40V, IDS = 0.9A, a maximum CW output power of 41.4dBm with a maximum power added efficiency （PAE） of 32.54% and a power combine efficiency of 69% was achieved at 5.4GHz.展开更多
A three-stage MMIC power amplifier operating from 6to 18GHz is fabricated using 0.25μm A1GaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor（PHEMT）.The amplifier isfully monolithic,with all matching,bi...A three-stage MMIC power amplifier operating from 6to 18GHz is fabricated using 0.25μm A1GaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor（PHEMT）.The amplifier isfully monolithic,with all matching,biasing,and DC block circuitry included on the chip.Thepower amplifier has an average power gain of 19dB over 6～18GHz.At operation frequenciesfrom 6 to 18GHz,the output power is above 33.3dBm,and the maximum output power of the MMICis 34.7dBm at 10Ghz.The input return loss is less than-10db and the out-put return is lessthan-6dB over operating frequency.This power amplifier has,to our knowledge,the best powergain flatness reported at C-X-Ku-band applications.展开更多
文摘A four-stage monolithic microwave integrated circuits （MMIC） low noise amplifier （LNA） operating from 23 to 36GHz is reported using commercially available 0.15μm PHEMT technology. The LNA is self-biased. To achieve a low noise characteristic, careful optimizations of gate width are performed to reduce gate resistance. Absorption circuits and an elaborate bias structure with a resistor-capacitor network are employed to improve stability. Multiple resonance points and negative feedback technologies are used to widen the bandwidth. Measurements show a noise figure （NF） of less than 2.0dB,and the lowest NF is only 1.6dB at a frequency of 31GHz. In the whole operation band,the LNA has a gain of higher than 26dB,and an input return loss and output return loss of more than 11 and 13dB,respectively. The output power at ldB compression gain of 36GHz is about 14dBm. The chip area is 2.4mm ×1mm.
文摘A power amplifier MIC with power combining based on AlGaN/GaN HEMTs was fabricated and measured. The amplifier consists of four 10 × 120μm transistors. A Wilkinson splitters and combining were used to divide and combine the power. By biasing the amplifier at VDS = 40V, IDS = 0.9A, a maximum CW output power of 41.4dBm with a maximum power added efficiency （PAE） of 32.54% and a power combine efficiency of 69% was achieved at 5.4GHz.
文摘A three-stage MMIC power amplifier operating from 6to 18GHz is fabricated using 0.25μm A1GaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor（PHEMT）.The amplifier isfully monolithic,with all matching,biasing,and DC block circuitry included on the chip.Thepower amplifier has an average power gain of 19dB over 6～18GHz.At operation frequenciesfrom 6 to 18GHz,the output power is above 33.3dBm,and the maximum output power of the MMICis 34.7dBm at 10Ghz.The input return loss is less than-10db and the out-put return is lessthan-6dB over operating frequency.This power amplifier has,to our knowledge,the best powergain flatness reported at C-X-Ku-band applications.
