极细颗粒黏土渗流的微电场效应分析

采用渗流固结法试验结合颗粒表面电位分析,研究极细颗粒黏土的渗流的微电场效应,在相同试验条件下完成了5种含不同百分比的人工高岭土与人工膨润土的试样的渗流特性测试。测试结果表明,微孔渗流的微电场效应对极细颗粒黏土的渗流特性有相当显著的影响,随着孔隙液离子浓度的升降或土颗粒表面电位的增减,试样的渗透系数会随之发生改变;在相同的孔隙液离子浓度下,随着膨润土相对含量的增加,试样的渗透系数随之降低。对科威特软土的渗流固结试验证实了人工土的微电场效应的产生机制与变化规律同样适用于天然软土。试验结果分析认为,在黏土-水-电解质系统的相互作用下,黏土矿物通过土颗粒表面的结合水影响试样的渗流特性,而土颗粒表面电荷的微电场作用是极细颗粒黏土渗流特性改变的内在原因之一。

微电场效应对土体渗透特性的影响

利用蒸馏水和不同电解质离子浓度的孔隙液对饱和人工土进行渗透试验,研究不同矿物成分及离子浓度的极细颗粒土渗流的微电场效应。研究发现:相同固结压力时,孔隙液浓度n越大,固结排水速度越快,渗流的微电场效应越明显,且孔隙液浓度在中段时,土样渗透系数的增长速度较快。粘土矿物成分含量的变化也会导致颗粒表面微电场的改变:高岭土含量较高时,颗粒之间存在自由水而出现"渗孔",孔隙液浓度增大导致渗透性显著提高;反之,膨润土含量较高时,孔隙液浓度对渗透性的影响不明显。

极细颗粒黏土渗流的微电场效应试验分析

土颗粒表面附有电荷并产生微电场,电场的作用使颗粒表面形成结合水膜,同时又影响土孔隙水中的离子运动规律而产生渗流离子效应,这两方面的影响将显著改变土体微孔隙的渗流特性,上述原因产生的渗流特性变化称为渗流的微电场效应。对于极细颗粒黏土,土颗粒表面电位可达数十至数百mV,致使渗流规律受到颗粒表面电场的显著影响。采用试验方法分析极细颗粒黏土微孔隙渗流的微电场效应问题,测试了不同孔隙水离子浓度情况的渗流固结结果,并由渗流固结试验成果推演颗粒表面电位对渗流特性的影响规律。试验结果表明,随孔隙水离子浓度的减少,颗粒表面电位增大,试样等效渗透系数和固结速度随之减少,极细颗粒黏土微孔隙渗流具有明显的微电场效应。

极细颗粒黏土渗流特性试验研究

为深入研究极细颗粒黏土的渗流特性,采用可调节水头高度的常水头渗透试验装置,利用不同离子浓度的孔隙液和蒸馏水,分别对极细颗粒人工土和广州南沙天然软土进行渗透试验。试验结果显现土体渗流的2个重要的特性,一是随着孔隙液离子浓度的增大,试样的渗透系数随之增加;二是随着水力梯度的降低,对于不同离子浓度的孔隙液情况,试样的渗透系数出现增大或者减小的"异常"现象。试验结果和机制分析认为,土颗粒表面电荷的微电场作用和渗流孔隙的微尺度效应是影响极细颗粒黏土的渗流特性的重要原因,而颗粒比表面积、表面电位、孔隙液离子浓度和孔隙尺度则是改变渗流特性的重要影响参数。对上述2个渗流特性分别采用"微电场效应"和"微尺度效应"作出解释,其中对软土渗流"异常"现象的真实原因仍需要更多的试验和进一步的研究探讨。

Probe the Effects of Surface Adsorbates on ZnO Nanowire Conductivity using Dielectric Force Microscopy

Characterization of electric properties of nanomaterials usually involves fabricating field effect transistors （FET） and deriving materials properties from device performances. However, the quality of electrode contacts in FET devices heavily influences the device performance, which makes it difficult to obtain the intrinsic electric properties of nanomaterials. Dielectric force microscopy （DFM）, a contactless method developed recently, can detect the low-frequency dielectric responses of nanomaterials without electric contact, which avoids the influence of electric contact and can be used to study the intrinsic conductivity of nanomaterials. Here we study the influences of surface adsorbates on the conductivity of ZnO nanowires （NWs） by using FET and DFM methods. The conductivity of ZnO NW is much larger in N2 atmosphere than that in ambient environment as measured by FET device, which is further proven by DFM measurement that the ZnO NW exhibits larger dielectric response in N2 environment, and the influence of electrode contacts on measurement can be ruled out. Based on these results, it can be concluded that the adsorbates on ZnO NW surface highly influence the conductivity of ZnO NW rather than the electrode contact. This work also verifies the capability of DFM in measuring electric properties of nanomaterials.

Study on the large-scale assembly and fabrication method for SWCNTs nano device

The large-scale assembly and fabrication method for single-walled carbon nanotube(SWCNT) nano devices was implemented.Assembly of SWCNT field effect transistor(FET) was realized by floating potential dielectrophoresis approach.The simulation of floating potential distribution of the chip was performed by comsol multiphysics coupling software.Six hundred devices were assembled on the area of less than one square centimeter.The fabricated devices were characterized by atomic force microscopy and scanning electron microscopy.The experimental results showed that large-scale assembly had been realized,and the success rate of ideal assembly for SWCNT FET had been assessed.

Selective and localized laser annealing effect for high- performance flexible multilayer MoS2 thin-film transistors

We report the use of ultra-short, pulsed-laser annealed Ti/Au contacts to enhance the performance of multilayer MoS2 field effect transistors （FETs） on flexible plastic substrates without thermal damage. An analysis of the temperature distribution, based on finite difference methods, enabled understanding of the compatibility of our picosecond laser annealing for flexible poly（ethylene naphthalate） （PEN） substrates with low thermal budget （〈 200 ℃）. The reduced contact resistance after laser annealing provided a significant improvement in transistor performance including higher peak field-effect mobility （from 24.84 to 44.84 cm2-V-l.s-1）, increased output resistance （0.42 MΩ at Vgs- Vth = 20 V, a three-fold increase）, a six-fold increase in the self-gain, and decreased sub- threshold swing. Transmission electron microscopy analysis and current-voltage measurements suggested that the reduced contact resistance resulted from the decrease of Schottky barrier width at the MoS2-metal junction. These results demonstrate that selective contact laser annealing is an attractive technology for fabricating low-resistivity metal-semiconductor junctions, providing important implications for the application of high-performance two-dimensional semicon- ductor FETs in flexible electronics.

Electrical control of antiferromagnetic metal up to 15 nm

Manipulation of antiferromagnetic(AFM) spins by electrical means is on great demand to develop the AFM spintronics with low power consumption. Here we report a reversible electrical control of antiferromagnetic moments of FeMn up to 15 nm, using an ionic liquid to exert a substantial electric-field effect. The manipulation is demonstrated by the modulation of exchange spring in[Co/Pt]/FeMn system, where AFM moments in FeMn pin the magnetization rotation of Co/Pt. By carrier injection or extraction,the magnetic anisotropy of the top layer in FeMn is modulated to influence the whole exchange spring and then passes its influence to the [Co/Pt]/FeMn interface, through a distance up to the length of exchange spring that fully screens electric field. Comparing FeMn to IrMn, despite the opposite dependence of exchange bias on gate voltages, the same correlation between carrier density and exchange spring stiffness is demonstrated. Besides the fundamental significance of modulating the spin structures in metallic AFM via all-electrical fashion, the present finding would advance the development of low-power-consumption AFM spintronics.