A solenoid-type inductor for high frequency application is realized using a micro-electro-mechanical systems (MEMS) technique.In order to achieve a high inductance value and Q-factor,UV-LIGA,dry etching technique,fine...A solenoid-type inductor for high frequency application is realized using a micro-electro-mechanical systems (MEMS) technique.In order to achieve a high inductance value and Q-factor,UV-LIGA,dry etching technique,fine polishing and electroplating technique are adopted.The dimensions of the inductor are 1500μm×900μm×70μm,having 41 turns with a coil width of 20μm separated by 20μm spaces and a high aspect ratio of 3.5∶1.The maximum measured inductance of the inductor is 6.17nH with a Q-factor of about 6.展开更多
Anodic bonding between silicon and glass with dou bl e electric fields is presented.By this means,the damage caused by the electric f ield to the movable part during bonding can be avoided and the experiment result s ...Anodic bonding between silicon and glass with dou bl e electric fields is presented.By this means,the damage caused by the electric f ield to the movable part during bonding can be avoided and the experiment result s show that.展开更多
This paper shows an analysis ofMEM S (micro electro mechanical systems) due to Lorentz force and mechanical shock. The formulation is based on a modified couple stress theory, the von Karman geometric nonlinearity a...This paper shows an analysis ofMEM S (micro electro mechanical systems) due to Lorentz force and mechanical shock. The formulation is based on a modified couple stress theory, the von Karman geometric nonlinearity and Reynolds equation as well. The model contains a silicon microbeam, which is encircled by a stationary plate. The non-dimensional governing equations and associated boundary conditions are then solved iteratively through the Galerkin weighted method. The results show that pull-in voltage is dependent on the geometry nonlinearity. It is also demonstrated that by increasing voltage between the silicon microbeam and stationary plate, the pull-in instability happens.展开更多
The field of micro-electro-mechanical systems(MEMS) has advanced tremendously for the last 20 years.Most commercially noticeably,the field has successfully advanced from pressure sensors to micro physical sensors,such...The field of micro-electro-mechanical systems(MEMS) has advanced tremendously for the last 20 years.Most commercially noticeably,the field has successfully advanced from pressure sensors to micro physical sensors,such as accelerometers and gyros,for handheld electronics application.In parallel,MEMS has also advanced into micro total analysis system(TAS) and/or lab-on-a-chip applications.This article would discuss a relatively new but promising future direction towards MEMS biomedical implants.Specifically,Parylene C has been explored to be used as a good MEMS implant material and will be discussed in detail.Demonstrated implant devices,such as retinal and spinal cord implants,are presented in this article.展开更多
Stress controllable silicon nitride(Si Nx) films deposited by plasma enhanced chemical vapor deposition(PECVD) are reported. Low stress Si Nx films were deposited in both high frequency(HF) mode and dual frequency(HF/...Stress controllable silicon nitride(Si Nx) films deposited by plasma enhanced chemical vapor deposition(PECVD) are reported. Low stress Si Nx films were deposited in both high frequency(HF) mode and dual frequency(HF/LF) mode. By optimizing process parameters, stress free(-0.27 MPa) Si Nx films were obtained with the deposition rate of 45.5 nm/min and the refractive index of 2.06. Furthermore, at HF/LF mode, the stress is significantly influenced by LF ratio and LF power, and can be controlled to be 10 MPa with the LF ratio of 17% and LF power of 150 W. However, LF power has a little effect on the deposition rate due to the interaction between HF power and LF power. The deposited Si Nx films have good mechanical and optical properties, low deposition temperature and controllable stress, and can be widely used in integrated circuit(IC), micro-electro-mechanical systems(MEMS) and bio-MEMS.展开更多
文摘A solenoid-type inductor for high frequency application is realized using a micro-electro-mechanical systems (MEMS) technique.In order to achieve a high inductance value and Q-factor,UV-LIGA,dry etching technique,fine polishing and electroplating technique are adopted.The dimensions of the inductor are 1500μm×900μm×70μm,having 41 turns with a coil width of 20μm separated by 20μm spaces and a high aspect ratio of 3.5∶1.The maximum measured inductance of the inductor is 6.17nH with a Q-factor of about 6.
文摘Anodic bonding between silicon and glass with dou bl e electric fields is presented.By this means,the damage caused by the electric f ield to the movable part during bonding can be avoided and the experiment result s show that.
文摘This paper shows an analysis ofMEM S (micro electro mechanical systems) due to Lorentz force and mechanical shock. The formulation is based on a modified couple stress theory, the von Karman geometric nonlinearity and Reynolds equation as well. The model contains a silicon microbeam, which is encircled by a stationary plate. The non-dimensional governing equations and associated boundary conditions are then solved iteratively through the Galerkin weighted method. The results show that pull-in voltage is dependent on the geometry nonlinearity. It is also demonstrated that by increasing voltage between the silicon microbeam and stationary plate, the pull-in instability happens.
文摘The field of micro-electro-mechanical systems(MEMS) has advanced tremendously for the last 20 years.Most commercially noticeably,the field has successfully advanced from pressure sensors to micro physical sensors,such as accelerometers and gyros,for handheld electronics application.In parallel,MEMS has also advanced into micro total analysis system(TAS) and/or lab-on-a-chip applications.This article would discuss a relatively new but promising future direction towards MEMS biomedical implants.Specifically,Parylene C has been explored to be used as a good MEMS implant material and will be discussed in detail.Demonstrated implant devices,such as retinal and spinal cord implants,are presented in this article.
基金supported by the National High Technology Research and Development Program of China(No.2015AA042603)the Fundamental Research Funds for the Central Universities of China(No.106112014CDJZR160001)
文摘Stress controllable silicon nitride(Si Nx) films deposited by plasma enhanced chemical vapor deposition(PECVD) are reported. Low stress Si Nx films were deposited in both high frequency(HF) mode and dual frequency(HF/LF) mode. By optimizing process parameters, stress free(-0.27 MPa) Si Nx films were obtained with the deposition rate of 45.5 nm/min and the refractive index of 2.06. Furthermore, at HF/LF mode, the stress is significantly influenced by LF ratio and LF power, and can be controlled to be 10 MPa with the LF ratio of 17% and LF power of 150 W. However, LF power has a little effect on the deposition rate due to the interaction between HF power and LF power. The deposited Si Nx films have good mechanical and optical properties, low deposition temperature and controllable stress, and can be widely used in integrated circuit(IC), micro-electro-mechanical systems(MEMS) and bio-MEMS.