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电容快放电型触发器的电路分析与设计 被引量:7
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作者 尹佳辉 刘鹏 +3 位作者 孙凤举 邱爱慈 刘志刚 张众 《高电压技术》 EI CAS CSCD 北大核心 2011年第4期975-981,共7页
为获得快前沿的高电压脉冲,分析了电容放电型触发器的电路,利用简化的等效电路研究了放电回路参数和气体开关的火花通道电阻、电感对触发脉冲上升时间的影响。分析了电压波在高阻抗负载上形成触发脉冲的过程,讨论了不同置地元件对输出... 为获得快前沿的高电压脉冲,分析了电容放电型触发器的电路,利用简化的等效电路研究了放电回路参数和气体开关的火花通道电阻、电感对触发脉冲上升时间的影响。分析了电压波在高阻抗负载上形成触发脉冲的过程,讨论了不同置地元件对输出波形的影响。在此基础上,给出了快前沿的电容放电型触发器的基本设计原则,并完成了30与100 kV快前沿触发器的设计。结果表明,30 kV触发器输出脉冲的前沿约12 ns,高阻抗负载上的幅值可达44 kV;100 kV触发器输出脉冲的前沿约10 ns,高阻抗负载上的幅值可达170 kV。 展开更多
关键词 触发器 气体火花开关 快前沿电脉冲 脉冲功率
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Effect and mechanism of on-chip electrostatic discharge protection circuit under fast rising time electromagnetic pulse
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作者 Mao Xinyi Chai Changchun +3 位作者 Li Fuxing Lin Haodong Zhao Tianlong Yang Yintang 《强激光与粒子束》 CAS CSCD 北大核心 2024年第10期44-52,共9页
The electrostatic discharge(ESD)protection circuit widely exists in the input and output ports of CMOS digital circuits,and fast rising time electromagnetic pulse(FREMP)coupled into the device not only interacts with ... The electrostatic discharge(ESD)protection circuit widely exists in the input and output ports of CMOS digital circuits,and fast rising time electromagnetic pulse(FREMP)coupled into the device not only interacts with the CMOS circuit,but also acts on the protection circuit.This paper establishes a model of on-chip CMOS electrostatic discharge protection circuit and selects square pulse as the FREMP signals.Based on multiple physical parameter models,it depicts the distribution of the lattice temperature,current density,and electric field intensity inside the device.At the same time,this paper explores the changes of the internal devices in the circuit under the injection of fast rising time electromagnetic pulse and describes the relationship between the damage amplitude threshold and the pulse width.The results show that the ESD protection circuit has potential damage risk,and the injection of FREMP leads to irreversible heat loss inside the circuit.In addition,pulse signals with different attributes will change the damage threshold of the circuit.These results provide an important reference for further evaluation of the influence of electromagnetic environment on the chip,which is helpful to carry out the reliability enhancement research of ESD protection circuit. 展开更多
关键词 fast rising time electromagnetic pulse damage effect electrostatic discharge protection circuit damage location prediction
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