熊熊烈火映真情

两户普通群众家不慎起火,从县长到百姓,各行各业的人们鼎力相助……扶危济困,助人为乐历来是我们民族所崇尚的美德,历经五千年历史长河的积淀,在今天它不仅没有过时,而且还是当前我们搞社会主义精神文明建设应当继承和发扬光大的。

The Influence of Rapid Thermal Annealing on SiGe/Si Multiple-Quantum Wells p_-i_-n Photodiodes

The influence of thermal treatment on Si 1-x Ge x/Si multiple-quantum wells (MQW) p-i-n photodiodes has been investigated by photocurrent spectroscopy combined with X-ray double crystal diffraction.The cutoff wavelength is significantly reduced due to the Si-Ge interdiffusion and partial relaxation of the strained SiGe alloy.The values of the blue shift increase slowly with the annealing temperatures in the range of 750℃ to 850℃.However,the nonlinear changes in photocurrent intensities of the samples annealed at different temperatures have been observed,which is mainly dominated by the generation of misfit dislocations and the reduction of the point defects in the heating process.

Effect of Rapid Thermal Annealing Ambient on Gettering Efficiency and Surface Microstructure in 300mm CZ Silicon Wafers

The effect of rapid thermal annealing （RTA） ambient on denuded zone and oxygen precipitates in Czochralski （CZ） silicon wafers is studied in this paper. N2 and a N2/NH3 mixture are used as RTA ambient. It is demonstrated that a high density of oxygen precipitates and thin denuded zone are obtained in N2/NH3 ambient,while a relatively lower density of oxygen precipitates and thicker denuded zone are observed in N2 ambient. As the RTA duration times increased, the oxygen precipitate density increased and the denuded zone depth decreased. X-ray photoelectron spectroscopy （XPS） data and atomic force microscope （AFM） results show that there RTA process,which can explain the different effect of RTA was a surface nitriding reaction during the N2/NH3 ambient ambient.

Effect of pre-annealing on microstructure and compactibility of gas-atomized Al-Si alloy powders

Effect of pre-annealing treatment temperature on compactibility of gas-atomized Al-27%Si alloy powders was investigated. Microstructure and hardness of the annealed powders were characterized. Pre-annealing results in decreasing Al matrix hardness, dissolving of needle-like eutectic Si phase, precipitation and growth of supersaturated Si atoms, and spheroidisation of primary Si phase. Compactibility of the alloy powders is gradually improved with increasing the annealing temperature to 400 ℃. However, it decreases when the temperature is above 400 ℃ owing to the existence of Si-Si phase clusters and the densely distributed Si particles. A maximum relative density of 96.1% is obtained after annealing at 400 ℃ for 4 h. In addition, the deviation of compactibility among the pre-annealed powders reaches a maximum at a pressure of 175 MPa. Therefore, a proper pre-annealing treatment can significantly enhance the cold compactibility of gas-atomized Al-Si alloy powders.

Properties of Y\|Silicides Synthesized Layer by Y Implantation and RTA Annealing\+*

Synthetic silicides with good properties were prepared,as Y ions were implanted into silicon using metal vapor vacuum arc (MEVVA) ion implantor and annealed by Rapid Thermal Annealing (RTA).The structure of synthetic silicides has been investigated with the analysis of channeled low angle emergence and TEM.Three layers could be observed in the implanted region as the implanting ion flux is selected as 25μA/cm\+2.The thickness of the silicide layer is about 60—80nm.The defect density N \-d and sheet resistance R \-s decrease with the increase of the ion flux.After RTA annealing of the implanted sample,the N\-d and R\-s decreased obviously.R\-s decreased from 54Ω/□ to 14Ω/□.The minimum of resistivity is 84μΩ·cm.It is evident that electrical properties of the Y silicides can be improved by RTA.The formation of the silicides with YSi and YSi\-2 are confirmed by X\|ray diffraction (XRD) analysis.With the analysis of low angle emergence,important information exposed from the depth profiles of atoms and lattice distortion in an implanted region would be used to study the synthesis of silicides.

Intel非礼“维纳斯”

比尔·盖茨3月10日6小时深圳之行“新闻”不断,最引人注目的莫过于微软专为中国老百姓“量身定制”的“维纳斯”计划,对“维纳斯”的企图各方面议论纷纷,褒贬不一,但有联想、宏基、海尔、步步高等PC、家电厂商率先捧场,一种操作简单、能上网、具备基本电脑功能的新型家电有望象VCD一样很快火起来。 所谓“维纳斯”不过是基于Windows CE定制的一个袖珍操作系统,“她”要想显灵发功,离不开CPU和电路板等硬件。细心的读者不难发现,加盟“维纳斯”计划的半导体厂商有AMD、C-Cube、ESS等,不见Intel的踪影。这不奇怪。

江老汉巧做传统豆腐

“薄如翼、嫩如膏。”吉林省桦甸市二道甸子镇农民经常用这样的话语来形容江志礼老汉做出的干豆腐、大豆腐。 52岁的江老汉在二道甸子镇开了三十多年的豆腐坊。说起做豆腐的手艺，十里八村无人能与他相比。不过，江老汉不保守，无论谁向他请教，他都耐心传授。为了便于人们记忆，他还把自己的绝活编成了豆腐经：“豆皮薄、豆腐香，泡豆适时机打浆，网细百目巧用水，筋道薄软有市场。” 洗衣机派上用场。在江老汉的豆腐坊里放着一台普通的单桶洗衣机。它不是用来洗衣服的，而是充当做豆腐的工具。原来，用卤水将豆浆点成脑儿后，必须将其打碎，打得越碎做出的豆腐越滑溜。以往用竹耙手工敲打，怎么也打不细。于是，江老汉“请”

Effects of Interdiffusion on Luminescence of InAs/GaAs Quantum Dots Covered by InGaAs Overgrowth Layer

WT8.BZ]The effects of postgrowth rapid thermal annealing have been studied on the optical properties of 3-nm-height InAs/GaAs quantum dots covered by 3-nm-thick In xGa 1-x As (x=0,0 1 and 0 2) overgrowth layer.At a higher annealing temperature (T≥750℃),the photoluminescence peak of InGaAs layer has been observed at the lower-energy side of InAs quantum-dot peak.In addition,a similar blueshift in photoluminescence (PL) emission energy is observed for all samples when the annealing temperature increases from 650 to 850℃.However,the trend of photoluminescence linewidth towards narrowing is totally different for InAs quantum dots with different In mole fraction in InGaAs overgrowth layer.The results suggest that the intermixing in the lateral direction plays an important role in obtaining a better understanding of the modification of optical properties induced by the rapid thermal annealing.

Solid-phase Crystallization of Amorphous Silicon Films by Rapid Thermal Annealing

The morphous silicon films prepared by PECVD at substrate temperatures of 30℃ have been crystallized by rapid thermal annealing method, the budget of time-temperature in the annealing process is 600℃ for 120s, 850℃ for 120s, and 950℃ for 120s. The results indicate the crystallization at 850℃ and 950℃ are better as shown in micro-Raman scattering and scanning electronic microscope.

Rapid synthesis of Pd single‐atom/cluster as highly active catalysts for Suzuki coupling reactions

Palladium(Pd)‐based catalysts are essential to drive high‐performance Suzuki coupling reactions,which are powerful tools for the synthesis of functional organic compounds.Herein,we developed a solution‐rapid‐annealing process to stabilize nitrogen‐mesoporous carbon supported Pd single‐atom/cluster(Pd/NMC)material,which provided a catalyst with superior performance for Suzuki coupling reactions.In comparison with commercial palladium/carbon(Pd/C)catalysts,the Pd/NMC catalyst exhibited significantly boosted activity(100%selectivity and 95%yield)and excellent stability(almost no decay in activity after 10 reuse cycles)for the Suzuki coupling reactions of chlorobenzenes,together with superior yield and excellent selectivity in the fields of the board scope of the reactants.Moreover,our newly developed rapid annealing process of precursor solutions is applied as a generalized method to stabilize metal clusters(e.g.Pd,Pt,Ru),opening new possibilities in the construction of efficient highly dispersed metal atom and sub‐nanometer cluster catalysts with high performance.

Effect of elevated-temperature annealing on microstructure and properties of Cu−0.15Zr alloy

Cu−0.15Zr(wt.%)alloy with uniform and fine microstructure was fabricated by rapid solidification followed by hot forging.Evolution of microstructure,mechanical properties and electrical conductivity of the alloy during elevated-temperature annealing were investigated.The alloy exhibits good thermal stability,and its strength decreases slightly even after annealing at 700℃ for 2 h.The nano-sized Cu_(5)Zr precipitates show significant pinning effect on dislocation moving,which is the main reason for the high strength of the alloy.Additionally,the large-size Cu_(5)Zr precipitates play a major role in retarding grain growth by pinning the grain boundaries during annealing.After annealing at 700℃ for 2 h,the electrical conductivity of samples reaches the peak value of 88%(IACS),which is attributed to the decrease of vacancy defects,dislocations,grain boundaries and Zr solutes.

Prestack seismic stochastic inversion based on statistical characteristic parameters

In the conventional stochastic inversion method,the spatial structure information of underground strata is usually characterized by variograms.However,effectively characterizing the heterogeneity of complex strata is difficult.In this paper,multiple parameters are used to fully explore the underground formation information in the known seismic reflection and well log data.The spatial structure characteristics of complex underground reservoirs are described more comprehensively using multiple statistical characteristic parameters.We propose a prestack seismic stochastic inversion method based on prior information on statistical characteristic parameters.According to the random medium theory,this method obtains several statistical characteristic parameters from known seismic and logging data,constructs a prior information model that meets the spatial structure characteristics of the underground strata,and integrates multiparameter constraints into the likelihood function to construct the objective function.The very fast quantum annealing algorithm is used to optimize and update the objective function to obtain the fi nal inversion result.The model test shows that compared with the traditional prior information model construction method,the prior information model based on multiple parameters in this paper contains more detailed stratigraphic information,which can better describe complex underground reservoirs.A real data analysis shows that the stochastic inversion method proposed in this paper can effectively predict the geophysical characteristics of complex underground reservoirs and has a high resolution.

Calculation of all-time apparent resistivity of large loop transient electromagnetic method with very fast simulated annealing

In large loop transient electromagnetic method(TEM),the late time apparent resistivity formula cannot truly reflect the geoelectric model,thus it needs to define the all-time apparent resistivity with the position information of measuring point.Utilizing very fast simulated annealing(VFSA) to fit the theoretical electromagnetic force(EMF) and measured EMF could obtain the all-time apparent resistivity of the measuring points in rectangular transmitting loop.The selective cope of initial model of VFSA could be confirmed by taking the late time apparent resistivity of transient electromagnetic method as the prior information.For verifying the correctness,the all-time apparent resistivities of the geoelectric models were calculated by VFSA and dichotomy,respectively.The results indicate that the relative differences of apparent resistivities calculated by these two methods are within 3%.The change of measuring point position has little influence on the tracing pattern of all-time apparent resistivity.The first branch of the curve of all-time apparent resistivity is close to the resistivity of the first layer medium and the last branch is close to the resistivity of the last layer medium,which proves the correctness of the arithmetics proposed.

Enhancement of Crystalline Quality of Strained InAs／InP Quantum Well Structures by Rapid Thermal Annealing

The effect of rapid thermal annealing on the optical properties of astrained InAs/InP single quantum well structrure has been investigated in this paper.The luminescence intensity of the quantum well at 8 K was increased by a factor of 4 and 1.55 meV blue shift of the quantum well photoluminescence peak was observed after annealing at the optimal condition of 700℃ for 5 s. Furthermore,we found that the luminescence efficiency of the deep radiative levels in the samples was also affected by rapid thermal annealing.Our experimental results have demonstrated that Rapid thermal annealing significantly improves the crystalline quality of strained quantum well structures after growth and is an important way for enhancement of the performance of the laser device.

烹调应注意什么?

一般饮食烹调的营养要求，也同样适用于肝病患者，是肝病患者饭莱合理烹调的基本要求。

Design of Rapid Thermal Processing for Large Diameter Wafer

The relationship between the arrangement of tungsten-halogen lamps and the uniformity of irradiance received by the wafer is discussed, and a sort of axial-symmetrical lamps-array is designed to guarantee that the irradiation on the edge is approximately the same as the one on the center of the wafer. The magnitude of temperature on the wafer vs. the power of tungsten-halogen lamps is calculated numerically.

Effects of TiO_2 volume fraction on the microstructure and magnetic properties of CoPt-TiO_2 nanocomposite films

CoPt-TiO2 nanocomposite films were synthesized by rapid thermal annealing of CoPt/TiO2 multilayers.The effects of TiO2 volume fraction on the microstructure and magnetic properties of the nanocomposite films were studied.Results showed that the ordering and texture of the L10-CoPt particles did not change with TiO2 content up to 76 vol.% of TiO2.However,the volume of the L10-CoPt particles in the film decreased with an increase in TiO2 content.Increasing TiO2 content effectively reduced the coalescence of magnetic grains when TiO2 content was larger than 56 vol.%.Both the out-of-plane coercivity and remanence ratio of the film decreased slightly with TiO2 content,but the in-plane coercivity and remanence ratio of the film decreased firstly and then increased after TiO2 content was larger than 56 vol.%.The reduction in the coercivity of the film should be due to the reduction in the size of the L10-CoPt particles.The reduction in remanence ratio might be due to the weakening of the exchange coupling strength between the magnetic grains when TiO2 content was increased,as indicated by the MFM images.

Mn-doped SiGe thin films grown by UHV/CVD with room-temperature ferromagnetism and high hole mobility

In this work,silicon-germanium(SiGe)thin films are epitaxially grown on Ge substrates by ultra-high vacuum chemical vapor deposition and then doped with Mn element by ion-implantation and subsequent rapid thermal annealing(RTA).The characterizations show that the epitaxial SiGe thin films are single-crystalline with uniform tensile strain and then become polycrystalline after the ion implantation and following RTA.The magnetization measurements indicate that the annealed thin films exhibit Mn concentration-dependent ferromagnetism up to 309 K and the X-ray magnetic circular dichroism characterizations reveal the spin and orbital magnetic moments from the substitutional Mn element.To minimize the influence of anomalous Hall effect,magneto-transport measurements at a high magnetic field up to 31 T at 300 K are performed to obtain the hole mobility,which reaches a record-high value of~1230 cm^(2)V^(-1)s^(-1),owing to the crystalline quality and tensile strain-induced energy band modulation of the samples.The first demonstration of Mn-doped SiGe thin films with roomtemperature ferromagnetism and high carrier mobility may pave the way for practical semiconductor spintronic applications.

The concept and realization of nanostructure fabrication using free-standing metallic wires with rapid thermal annealing

Free-standing metallic nanostructures are considered to be highly relevant to many branches of science and technology with applications of three dimensional metallic nanostructures ranging from optical reflectors,actuators,and antenna,to free-standing electrodes,mechanical,optical,and electrical resonators and sensors.Strain-induced out-of-plane fabrication has emerged as an effective method which uses relaxation of strain-mismatched materials.In this work,we report a study of the thermal annealing-induced shape modification of free-standing nanostructures,which was achieved by introducing compositional or microstructural nonuniformity to the nanowires.In particular gradient,segmented and striped hetero-nanowires were grown by focused-ion-beam-induced chemical vapor deposition,followed by rapid thermal annealing in a N2 atmosphere.Various free-standing nanostructures were produced as a result of the crystalline/grain growth and stress relief.