WT8.BZ]The effects of postgrowth rapid thermal annealing have been studied on the optical properties of 3-nm-height InAs/GaAs quantum dots covered by 3-nm-thick In xGa 1-x As (x=0,0 1 and 0 2) overgrowth layer...WT8.BZ]The effects of postgrowth rapid thermal annealing have been studied on the optical properties of 3-nm-height InAs/GaAs quantum dots covered by 3-nm-thick In xGa 1-x As (x=0,0 1 and 0 2) overgrowth layer.At a higher annealing temperature (T≥750℃),the photoluminescence peak of InGaAs layer has been observed at the lower-energy side of InAs quantum-dot peak.In addition,a similar blueshift in photoluminescence (PL) emission energy is observed for all samples when the annealing temperature increases from 650 to 850℃.However,the trend of photoluminescence linewidth towards narrowing is totally different for InAs quantum dots with different In mole fraction in InGaAs overgrowth layer.The results suggest that the intermixing in the lateral direction plays an important role in obtaining a better understanding of the modification of optical properties induced by the rapid thermal annealing.展开更多
The morphous silicon films prepared by PECVD at substrate temperatures of 30℃ have been crystallized by rapid thermal annealing method, the budget of time-temperature in the annealing process is 600℃ for 120s, 850℃...The morphous silicon films prepared by PECVD at substrate temperatures of 30℃ have been crystallized by rapid thermal annealing method, the budget of time-temperature in the annealing process is 600℃ for 120s, 850℃ for 120s, and 950℃ for 120s. The results indicate the crystallization at 850℃ and 950℃ are better as shown in micro-Raman scattering and scanning electronic microscope.展开更多
The effect of rapid thermal annealing on the optical properties of astrained InAs/InP single quantum well structrure has been investigated in this paper.The luminescence intensity of the quantum well at 8 K was increa...The effect of rapid thermal annealing on the optical properties of astrained InAs/InP single quantum well structrure has been investigated in this paper.The luminescence intensity of the quantum well at 8 K was increased by a factor of 4 and 1.55 meV blue shift of the quantum well photoluminescence peak was observed after annealing at the optimal condition of 700℃ for 5 s. Furthermore,we found that the luminescence efficiency of the deep radiative levels in the samples was also affected by rapid thermal annealing.Our experimental results have demonstrated that Rapid thermal annealing significantly improves the crystalline quality of strained quantum well structures after growth and is an important way for enhancement of the performance of the laser device.展开更多
The relationship between the arrangement of tungsten-halogen lamps and the uniformity of irradiance received by the wafer is discussed, and a sort of axial-symmetrical lamps-array is designed to guarantee that the irr...The relationship between the arrangement of tungsten-halogen lamps and the uniformity of irradiance received by the wafer is discussed, and a sort of axial-symmetrical lamps-array is designed to guarantee that the irradiation on the edge is approximately the same as the one on the center of the wafer. The magnitude of temperature on the wafer vs. the power of tungsten-halogen lamps is calculated numerically.展开更多
In this work,silicon-germanium(SiGe)thin films are epitaxially grown on Ge substrates by ultra-high vacuum chemical vapor deposition and then doped with Mn element by ion-implantation and subsequent rapid thermal anne...In this work,silicon-germanium(SiGe)thin films are epitaxially grown on Ge substrates by ultra-high vacuum chemical vapor deposition and then doped with Mn element by ion-implantation and subsequent rapid thermal annealing(RTA).The characterizations show that the epitaxial SiGe thin films are single-crystalline with uniform tensile strain and then become polycrystalline after the ion implantation and following RTA.The magnetization measurements indicate that the annealed thin films exhibit Mn concentration-dependent ferromagnetism up to 309 K and the X-ray magnetic circular dichroism characterizations reveal the spin and orbital magnetic moments from the substitutional Mn element.To minimize the influence of anomalous Hall effect,magneto-transport measurements at a high magnetic field up to 31 T at 300 K are performed to obtain the hole mobility,which reaches a record-high value of~1230 cm^(2)V^(-1)s^(-1),owing to the crystalline quality and tensile strain-induced energy band modulation of the samples.The first demonstration of Mn-doped SiGe thin films with roomtemperature ferromagnetism and high carrier mobility may pave the way for practical semiconductor spintronic applications.展开更多
CoPt-TiO2 nanocomposite films were synthesized by rapid thermal annealing of CoPt/TiO2 multilayers.The effects of TiO2 volume fraction on the microstructure and magnetic properties of the nanocomposite films were stud...CoPt-TiO2 nanocomposite films were synthesized by rapid thermal annealing of CoPt/TiO2 multilayers.The effects of TiO2 volume fraction on the microstructure and magnetic properties of the nanocomposite films were studied.Results showed that the ordering and texture of the L10-CoPt particles did not change with TiO2 content up to 76 vol.% of TiO2.However,the volume of the L10-CoPt particles in the film decreased with an increase in TiO2 content.Increasing TiO2 content effectively reduced the coalescence of magnetic grains when TiO2 content was larger than 56 vol.%.Both the out-of-plane coercivity and remanence ratio of the film decreased slightly with TiO2 content,but the in-plane coercivity and remanence ratio of the film decreased firstly and then increased after TiO2 content was larger than 56 vol.%.The reduction in the coercivity of the film should be due to the reduction in the size of the L10-CoPt particles.The reduction in remanence ratio might be due to the weakening of the exchange coupling strength between the magnetic grains when TiO2 content was increased,as indicated by the MFM images.展开更多
Free-standing metallic nanostructures are considered to be highly relevant to many branches of science and technology with applications of three dimensional metallic nanostructures ranging from optical reflectors,actu...Free-standing metallic nanostructures are considered to be highly relevant to many branches of science and technology with applications of three dimensional metallic nanostructures ranging from optical reflectors,actuators,and antenna,to free-standing electrodes,mechanical,optical,and electrical resonators and sensors.Strain-induced out-of-plane fabrication has emerged as an effective method which uses relaxation of strain-mismatched materials.In this work,we report a study of the thermal annealing-induced shape modification of free-standing nanostructures,which was achieved by introducing compositional or microstructural nonuniformity to the nanowires.In particular gradient,segmented and striped hetero-nanowires were grown by focused-ion-beam-induced chemical vapor deposition,followed by rapid thermal annealing in a N2 atmosphere.Various free-standing nanostructures were produced as a result of the crystalline/grain growth and stress relief.展开更多
文摘WT8.BZ]The effects of postgrowth rapid thermal annealing have been studied on the optical properties of 3-nm-height InAs/GaAs quantum dots covered by 3-nm-thick In xGa 1-x As (x=0,0 1 and 0 2) overgrowth layer.At a higher annealing temperature (T≥750℃),the photoluminescence peak of InGaAs layer has been observed at the lower-energy side of InAs quantum-dot peak.In addition,a similar blueshift in photoluminescence (PL) emission energy is observed for all samples when the annealing temperature increases from 650 to 850℃.However,the trend of photoluminescence linewidth towards narrowing is totally different for InAs quantum dots with different In mole fraction in InGaAs overgrowth layer.The results suggest that the intermixing in the lateral direction plays an important role in obtaining a better understanding of the modification of optical properties induced by the rapid thermal annealing.
文摘The morphous silicon films prepared by PECVD at substrate temperatures of 30℃ have been crystallized by rapid thermal annealing method, the budget of time-temperature in the annealing process is 600℃ for 120s, 850℃ for 120s, and 950℃ for 120s. The results indicate the crystallization at 850℃ and 950℃ are better as shown in micro-Raman scattering and scanning electronic microscope.
文摘The effect of rapid thermal annealing on the optical properties of astrained InAs/InP single quantum well structrure has been investigated in this paper.The luminescence intensity of the quantum well at 8 K was increased by a factor of 4 and 1.55 meV blue shift of the quantum well photoluminescence peak was observed after annealing at the optimal condition of 700℃ for 5 s. Furthermore,we found that the luminescence efficiency of the deep radiative levels in the samples was also affected by rapid thermal annealing.Our experimental results have demonstrated that Rapid thermal annealing significantly improves the crystalline quality of strained quantum well structures after growth and is an important way for enhancement of the performance of the laser device.
基金Foundationfor Key Youth Teachers from Hunan Province(521105237) Natural Science Foundation of HunanUniversity(521101805)
文摘The relationship between the arrangement of tungsten-halogen lamps and the uniformity of irradiance received by the wafer is discussed, and a sort of axial-symmetrical lamps-array is designed to guarantee that the irradiation on the edge is approximately the same as the one on the center of the wafer. The magnitude of temperature on the wafer vs. the power of tungsten-halogen lamps is calculated numerically.
基金supported by the National Key Research and Development Program of China(2017YFB0405702)the National Natural Science Foundation of China(52172272)。
文摘In this work,silicon-germanium(SiGe)thin films are epitaxially grown on Ge substrates by ultra-high vacuum chemical vapor deposition and then doped with Mn element by ion-implantation and subsequent rapid thermal annealing(RTA).The characterizations show that the epitaxial SiGe thin films are single-crystalline with uniform tensile strain and then become polycrystalline after the ion implantation and following RTA.The magnetization measurements indicate that the annealed thin films exhibit Mn concentration-dependent ferromagnetism up to 309 K and the X-ray magnetic circular dichroism characterizations reveal the spin and orbital magnetic moments from the substitutional Mn element.To minimize the influence of anomalous Hall effect,magneto-transport measurements at a high magnetic field up to 31 T at 300 K are performed to obtain the hole mobility,which reaches a record-high value of~1230 cm^(2)V^(-1)s^(-1),owing to the crystalline quality and tensile strain-induced energy band modulation of the samples.The first demonstration of Mn-doped SiGe thin films with roomtemperature ferromagnetism and high carrier mobility may pave the way for practical semiconductor spintronic applications.
基金supported by the Agency for Science, Technology and Research (ASTAR) Singapore (Grant No. 062-101-0021)FRC of NUS (Grant No. R-284-000-053-112)
文摘CoPt-TiO2 nanocomposite films were synthesized by rapid thermal annealing of CoPt/TiO2 multilayers.The effects of TiO2 volume fraction on the microstructure and magnetic properties of the nanocomposite films were studied.Results showed that the ordering and texture of the L10-CoPt particles did not change with TiO2 content up to 76 vol.% of TiO2.However,the volume of the L10-CoPt particles in the film decreased with an increase in TiO2 content.Increasing TiO2 content effectively reduced the coalescence of magnetic grains when TiO2 content was larger than 56 vol.%.Both the out-of-plane coercivity and remanence ratio of the film decreased slightly with TiO2 content,but the in-plane coercivity and remanence ratio of the film decreased firstly and then increased after TiO2 content was larger than 56 vol.%.The reduction in the coercivity of the film should be due to the reduction in the size of the L10-CoPt particles.The reduction in remanence ratio might be due to the weakening of the exchange coupling strength between the magnetic grains when TiO2 content was increased,as indicated by the MFM images.
基金supported by the Outstanding Technical Talent Program of the Chinese Academy of Sciencesthe National Natural Science Foundation of China(Grant Nos.91123004,11104334,50825206,10834012 and 60801043)
文摘Free-standing metallic nanostructures are considered to be highly relevant to many branches of science and technology with applications of three dimensional metallic nanostructures ranging from optical reflectors,actuators,and antenna,to free-standing electrodes,mechanical,optical,and electrical resonators and sensors.Strain-induced out-of-plane fabrication has emerged as an effective method which uses relaxation of strain-mismatched materials.In this work,we report a study of the thermal annealing-induced shape modification of free-standing nanostructures,which was achieved by introducing compositional or microstructural nonuniformity to the nanowires.In particular gradient,segmented and striped hetero-nanowires were grown by focused-ion-beam-induced chemical vapor deposition,followed by rapid thermal annealing in a N2 atmosphere.Various free-standing nanostructures were produced as a result of the crystalline/grain growth and stress relief.
