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Influence of rapid thermal process on intrinsic gettering in fast neutron irradiated Czochralski silicon
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作者 陈贵锋 李养贤 +5 位作者 李兴华 蔡莉莉 马巧云 牛萍娟 牛胜利 陈东风 《中国有色金属学会会刊:英文版》 CSCD 2006年第B01期109-112,共4页
A rapid thermal process (RTP) was first introduced into the intrinsic gettering (IG) processes of fast neutron irradiated Czochralski (CZ) silicon. The effect of RTP conditions on bulk microdefects (BMDs) and denuded ... A rapid thermal process (RTP) was first introduced into the intrinsic gettering (IG) processes of fast neutron irradiated Czochralski (CZ) silicon. The effect of RTP conditions on bulk microdefects (BMDs) and denuded zone (DZ) was investigated. Fourier transform infrared absorption spectrometer (FTIR) was used to measure the concentration of interstitial oxygen ([Oi]). Bulk microdefects were observed by optical microscope. The results show that, according to the variation of [Oi], it is found that RTP doesn’t change the processes of oxygen precipitation in fast neutron irradiated Czochralski silicon. Perfect denuded zone, dense oxygen precipitates and defects form in the bulk of irradiated samples. With increasing temperature of RTP, the width of denuded zone decreases. Increasing RTP cooling rate, the density of Bulk microdefects increases. DZ forms in the sample that annealed in nitrogen atmosphere. 展开更多
关键词 快速热合成法 快中子辐照直拉硅 FTIR 内部去疵 硅单晶
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