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高压快速离化半导体开关及其脉冲压缩特性 被引量:5
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作者 梁勤金 石小燕 潘文武 《强激光与粒子束》 EI CAS CSCD 北大核心 2011年第8期2141-2144,共4页
介绍了全固态高压快速离化半导体开关(FID)的工作原理和半导体结构,实验研究了在不同外偏置电压下的输出脉冲幅度特性和脉宽压缩特性,并对实验研究结果进行分析。在50Ω负载下,将一输入脉冲幅度1.7kV、脉宽4μs、重频2kHz高压脉冲,通过... 介绍了全固态高压快速离化半导体开关(FID)的工作原理和半导体结构,实验研究了在不同外偏置电压下的输出脉冲幅度特性和脉宽压缩特性,并对实验研究结果进行分析。在50Ω负载下,将一输入脉冲幅度1.7kV、脉宽4μs、重频2kHz高压脉冲,通过FID压缩成脉冲幅度1 985V、脉宽90ns、重频2kHz的高压脉冲。 展开更多
关键词 高压脉冲 快速离化器件 半导体开关 等离子体 脉冲压缩
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新型亚纳秒高功率半导体开关器件 被引量:2
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作者 刘忠山 杨勇 +2 位作者 马红梅 刘英坤 崔占东 《半导体技术》 CAS CSCD 北大核心 2009年第6期557-559,共3页
介绍了一种基于半导体内部的等离子体波理论而设计制造的全固态高功率半导体开关器件——快速离化器件(FID),阐述了FID器件的工作机理。采用传统的电力电子器件的制造工艺技术,研制出了新型亚纳秒快速离化器件。FID器件采用无感裸芯片... 介绍了一种基于半导体内部的等离子体波理论而设计制造的全固态高功率半导体开关器件——快速离化器件(FID),阐述了FID器件的工作机理。采用传统的电力电子器件的制造工艺技术,研制出了新型亚纳秒快速离化器件。FID器件采用无感裸芯片封装技术,寄生参数小。单个FID器件工作电压>2kV,导通时间<1ns,工作电流高达10kA,抖动<20ps,di/dt超过100kA/μs,重复频率400kHz。具有极易串并联、导通触发脉冲可同步产生、工作特性高度稳定、体积小、重量轻等优点,FID可与DSRD组合应用,当采用MARX电路连接时,可以获得几十千伏以上的高压快速脉冲。FID器件脉冲发生器具有广阔的应用前景。 展开更多
关键词 快速离化器件 等离子体波 快速离化 漂移阶跃恢复器 亚纳秒 无感裸芯片封装
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半导体脉冲功率开关器件综述 被引量:4
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作者 梁琳 颜小雪 +3 位作者 黄鑫远 卿正恒 杨泽伟 尚海 《中国电机工程学报》 EI CSCD 北大核心 2022年第23期8631-8651,共21页
该文对应用于脉冲功率领域的特种半导体开关器件进行综述,具体包括反向开关晶体管(reversely switched dynistor,RSD)、漂移阶跃恢复二极管(drift step recovery diode,DSRD)和快速离化晶体管(fast ionization dynistor,FID)。上述半导... 该文对应用于脉冲功率领域的特种半导体开关器件进行综述,具体包括反向开关晶体管(reversely switched dynistor,RSD)、漂移阶跃恢复二极管(drift step recovery diode,DSRD)和快速离化晶体管(fast ionization dynistor,FID)。上述半导体开关器件从时间尺度上分别对应微秒级、纳秒级和皮秒级,研制材料包括硅基(Si)和碳化硅基(SiC)。该文介绍相关器件的工作机理、关键技术和应用情况,以及部分研究进展,并对未来的发展趋势进行展望。 展开更多
关键词 半导体开关 脉冲功率 反向开关晶体管 漂移阶跃恢复二极管 快速离化晶体管
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Properties of Y\|Silicides Synthesized Layer by Y Implantation and RTA Annealing\+*
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作者 张通和 吴瑜光 张通和 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2000年第6期542-547,共6页
Synthetic silicides with good properties were prepared,as Y ions were implanted into silicon using metal vapor vacuum arc (MEVVA) ion implantor and annealed by Rapid Thermal Annealing (RTA).The structure of synthetic ... Synthetic silicides with good properties were prepared,as Y ions were implanted into silicon using metal vapor vacuum arc (MEVVA) ion implantor and annealed by Rapid Thermal Annealing (RTA).The structure of synthetic silicides has been investigated with the analysis of channeled low angle emergence and TEM.Three layers could be observed in the implanted region as the implanting ion flux is selected as 25μA/cm\+2.The thickness of the silicide layer is about 60—80nm.The defect density N \-d and sheet resistance R \-s decrease with the increase of the ion flux.After RTA annealing of the implanted sample,the N\-d and R\-s decreased obviously.R\-s decreased from 54Ω/□ to 14Ω/□.The minimum of resistivity is 84μΩ·cm.It is evident that electrical properties of the Y silicides can be improved by RTA.The formation of the silicides with YSi and YSi\-2 are confirmed by X\|ray diffraction (XRD) analysis.With the analysis of low angle emergence,important information exposed from the depth profiles of atoms and lattice distortion in an implanted region would be used to study the synthesis of silicides. 展开更多
关键词 Y implantation in silicon low angle emergence channeling MEVVA ion implantation
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Alkalibacillus halophilus subsp. hitensis subsp. nov.:A new subspecies of moderately halophilic bacterium isolated from a chemical plant in China
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作者 李维国 马放 +2 位作者 魏利 李丽萍 苏俊峰 《Journal of Harbin Institute of Technology(New Series)》 EI CAS 2009年第3期297-302,共6页
In order to develop halophilic microorganism resources to improve environment, a Gram-positive, strictly aerobic and moderately halophilic bacterial strain JSA1 was obtained from the waste water sample collected from ... In order to develop halophilic microorganism resources to improve environment, a Gram-positive, strictly aerobic and moderately halophilic bacterial strain JSA1 was obtained from the waste water sample collected from Jinhong Chemical Plant at Weihai city, by the methods of quick isolation and screening of halophilie bacteria. Systematic studies on it were carried out. Results show that the strain JSA1 is bacillus. The temperature range most suitable for its growth is 29 - 35 ℃ and the most suitable pH is 6. 5 - 9. 0. It can grow well at the salt mass concentration of 30 - 150 g/L. The C + G mole fraction of its DNA is 37.5%. The analytical result of 16S rRNA gene sequence reveals that this strain has the closest relationship with Alkalibacillus halophilus (DQ359731) of Alkalibacillts. Their similarities are as high as 99%. However, they have obvious differences in aspects of whole-cell main fatty acid components, cell size, cell morphology, motility, oxidase, gelatine liquefication, NaCl tolerance range, pH tolerance range, G + C mole fraction, sole carbon source, sole nitrogen source, antibiotic sensitivity and strain source. Comparing with other species of the same genus, differences of this strain are even more obvious. In view of muhiple identification results, we believe this strain is a new subspecies ofAlkalibacillus halophilus and name it Alkalibacillus halophilus subsp, hitensis subsp, nov. 展开更多
关键词 moderately halophilic bacterium polyphasic taxonomy new subspecies Alkalibacillus halophilus subsp hitensis subsp nov.
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Study on the Stability of Ion-exchange Resin Catalysts:Ⅰ. TGA as a Rapid Evaluating Method
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作者 Tan Songwei Wang Hongjun +3 位作者 Jiang Hongliang Wang Liqun Wilbert Tsao Lin Xiangzhou 《China Petroleum Processing & Petrochemical Technology》 SCIE CAS 2010年第2期68-74,共7页
The thermal stability of five commercial ion-exchange resin catalysts was studied by means of thermal gravimetric analysis (TGA) at elevated temperatures of up to 600℃ and isothermal temperatures in the range of 15... The thermal stability of five commercial ion-exchange resin catalysts was studied by means of thermal gravimetric analysis (TGA) at elevated temperatures of up to 600℃ and isothermal temperatures in the range of 150℃ and 200 ℃. Resin samples with different initial water contents were also investigated. The study indicated that TGA, as a complementary evaluating method for the plug flow reactor system approach, could be used as a fast analyzing means for study on the thermal stability of ion-exchange resin catalysts. The stoichiometric calculation of the isothermally treated resin catalysts based on the FTIR analysis and acid capacity confirmed that the weight loss of the resins at 150℃ and 200℃ was caused by the desulfonation process and that desulfonation occurred mainly at the para-position of the benzene ring in the resins. H+ ions and moisture played an important role in the desulfonation process. 展开更多
关键词 thermal stability ion-exchange resin CATALYSTS TGA DESULFONATION
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