Soil microbes play important roles in terrestrial ecosystem carbon and nitrogen cycling. Climatic warming and elevated CO2 are two aspects of climatic change. In this study, we used a meta-analysis approach to synthes...Soil microbes play important roles in terrestrial ecosystem carbon and nitrogen cycling. Climatic warming and elevated CO2 are two aspects of climatic change. In this study, we used a meta-analysis approach to synthesise observations related to the effects of warming and elevated CO2 on soil microbial biomass and community structure. Ecosystem types were mainly grouped into forests and grasslands. Warming methods included open top chambers and infrared radiators. Experimental settings included all-day warming, daytime warming and nighttime warming. Warming increased soil actinomycetes and saprotrophic fungi, while elevated CO2 decreased soil gram-positive bacteria(G+). Mean annual temperature and mean annual precipitation were negatively correlated with warming effects on gram-negative bacteria(G–) and total phospholipid fatty acid(PLFA), respectively. Elevation was positively correlated with the warming effect on total PLFA, bacteria, G+ and G–. Grassland exhibited a positive response of total PLFA and actinomycetes to warming, while forest exhibited a positive response in the ratio of soil fungi to bacteria(F/B ratio) to warming. The open top chamber method increased G–, while the infrared radiator method decreased the F/B ratio. Daytime warming rather than all-day warming increased G–. Our findings indicated that the effects of warming on soil microbes differed with ecosystem types, warming methods, warming times, elevation and local climate conditions.展开更多
Profit from high current gain features, 4 H-Si C power Darlington transistor has the capacity for handling high current transmission. In this paper, monolithic Darlington transistors were fabricated using a simultaneo...Profit from high current gain features, 4 H-Si C power Darlington transistor has the capacity for handling high current transmission. In this paper, monolithic Darlington transistors were fabricated using a simultaneous formation process for both n-type(emitter) and p-type(base) ohmic contact. The isolated device shows current gain of 1061 and 823 with collector current density(JC) increasing from 200 to 800 A/cm2, exhibiting a slight current gain drop at high JC. By extracting the interface state density(Dit) between Si O2 and p-type 4 H-Si C, it is found that this advantage owes to the improvement of the shallow bulk minority carrier lifetime in base region. Furthermore, ISE-TCAD(technology computer aided design) simulation was carried out to study the relationship between base minority lifetime and the current gain, from which the total base minority lifetime is estimated to be 48 ns. The open base breakdown voltage(BVCEO) is 850 V at a leakage current of 2 μA due to the electric filed crowding at the isolation bottom between drive bipolar junction transistor(BJT) and output BJT. To solve this, non-isolated devices were also fabricated with improved BVCEOof 2370 V, indicating the superior potential of 4 H-Si C monolithic Darlington transistors for high power application, while the current gain is deceased to 420, which needs further improvement.展开更多
基金The Guangxi Key Research and Development Program(AB22035060)The National Natural Science Foundation of China(32060369)The Guangxi Academy of Sciences Basic Scientific Research Operation Fund Project(CQZ-D-1904)。
基金National Natural Science Foundation of China(31600432,41571042)The National Key Research Projects of China(2017YFA0604801)+2 种基金The Youth Innovation Research Team Project of Key Laboratory of Ecosystem Network Observation and Modeling(LENOM2016Q0002)Chinese Academy of Science Western Light Talents Program(Response of livestock carrying capability to climatic change and grazing in the alpine meadow of Northern Tibetan Plateau)Tibet Science and Technology Major Projects of Pratacultural Industry
文摘Soil microbes play important roles in terrestrial ecosystem carbon and nitrogen cycling. Climatic warming and elevated CO2 are two aspects of climatic change. In this study, we used a meta-analysis approach to synthesise observations related to the effects of warming and elevated CO2 on soil microbial biomass and community structure. Ecosystem types were mainly grouped into forests and grasslands. Warming methods included open top chambers and infrared radiators. Experimental settings included all-day warming, daytime warming and nighttime warming. Warming increased soil actinomycetes and saprotrophic fungi, while elevated CO2 decreased soil gram-positive bacteria(G+). Mean annual temperature and mean annual precipitation were negatively correlated with warming effects on gram-negative bacteria(G–) and total phospholipid fatty acid(PLFA), respectively. Elevation was positively correlated with the warming effect on total PLFA, bacteria, G+ and G–. Grassland exhibited a positive response of total PLFA and actinomycetes to warming, while forest exhibited a positive response in the ratio of soil fungi to bacteria(F/B ratio) to warming. The open top chamber method increased G–, while the infrared radiator method decreased the F/B ratio. Daytime warming rather than all-day warming increased G–. Our findings indicated that the effects of warming on soil microbes differed with ecosystem types, warming methods, warming times, elevation and local climate conditions.
基金supported by the National Key Research and Development Program(Grant No.2016YFB0400500)the National Grid Science&Technology Project(Grant No.5455DW150006)+2 种基金the Natural Science Basic Research Plan in Shaanxi Province of China(Grant No.2017JM6003)the Industrial Research Project of Science and Technology Department of Shaanxi Province(Grant No.2016GY-076)the 111 Project(Grant No.B12026)
文摘Profit from high current gain features, 4 H-Si C power Darlington transistor has the capacity for handling high current transmission. In this paper, monolithic Darlington transistors were fabricated using a simultaneous formation process for both n-type(emitter) and p-type(base) ohmic contact. The isolated device shows current gain of 1061 and 823 with collector current density(JC) increasing from 200 to 800 A/cm2, exhibiting a slight current gain drop at high JC. By extracting the interface state density(Dit) between Si O2 and p-type 4 H-Si C, it is found that this advantage owes to the improvement of the shallow bulk minority carrier lifetime in base region. Furthermore, ISE-TCAD(technology computer aided design) simulation was carried out to study the relationship between base minority lifetime and the current gain, from which the total base minority lifetime is estimated to be 48 ns. The open base breakdown voltage(BVCEO) is 850 V at a leakage current of 2 μA due to the electric filed crowding at the isolation bottom between drive bipolar junction transistor(BJT) and output BJT. To solve this, non-isolated devices were also fabricated with improved BVCEOof 2370 V, indicating the superior potential of 4 H-Si C monolithic Darlington transistors for high power application, while the current gain is deceased to 420, which needs further improvement.