We propose a voltage reference based on the weighted difference between the gate-source voltages of an nMOS and a pMOS operating in their saturation regions. No diodes or parasitic bipolar transistors are used, The ci...We propose a voltage reference based on the weighted difference between the gate-source voltages of an nMOS and a pMOS operating in their saturation regions. No diodes or parasitic bipolar transistors are used, The circuit is simulated and fabricated with SMIC 0.18μm mixed-signal technology,and our measurements demonstrate that its temperature coefficient is 44ppm/℃ and its PSRR is - 46dB, It works well when Vdd is above 650mV. The active area of the circuit is about 0.05mm^2.展开更多
文摘We propose a voltage reference based on the weighted difference between the gate-source voltages of an nMOS and a pMOS operating in their saturation regions. No diodes or parasitic bipolar transistors are used, The circuit is simulated and fabricated with SMIC 0.18μm mixed-signal technology,and our measurements demonstrate that its temperature coefficient is 44ppm/℃ and its PSRR is - 46dB, It works well when Vdd is above 650mV. The active area of the circuit is about 0.05mm^2.
