A novel general-purpose low-voltage rail-to-rail CMOS （ complementary metal-oxide-semiconductor transistor ） operational amplifier （op-amp）is introduced, which obtains constant transconductance, slew rate and cons...A novel general-purpose low-voltage rail-to-rail CMOS （ complementary metal-oxide-semiconductor transistor ） operational amplifier （op-amp）is introduced, which obtains constant transconductance, slew rate and constant high gain over the entire input common mode voltage range. The proposed scheme has the potential for applications in deep submicrometer technology, as the operation of the circuit does not exclusively rely on the square-law or the linear-law of transistors. The scheme is compact and suitable for applications as VLSI cell. The rail-to- rail op-amp has been implemented in DPDM 0. 6 μm mixedsignal process. The simulations show that in the entire range of input common mode voltage, the variations in transconductance, SR and gain are 1%, 2. 3%, 1.36 dB, respectively. Based on this, the layout and tape-out are carded out. The area of layout is 0. 072 mm^2. The test results are basically consistent with the circuit simulation.展开更多
文摘A novel general-purpose low-voltage rail-to-rail CMOS （ complementary metal-oxide-semiconductor transistor ） operational amplifier （op-amp）is introduced, which obtains constant transconductance, slew rate and constant high gain over the entire input common mode voltage range. The proposed scheme has the potential for applications in deep submicrometer technology, as the operation of the circuit does not exclusively rely on the square-law or the linear-law of transistors. The scheme is compact and suitable for applications as VLSI cell. The rail-to- rail op-amp has been implemented in DPDM 0. 6 μm mixedsignal process. The simulations show that in the entire range of input common mode voltage, the variations in transconductance, SR and gain are 1%, 2. 3%, 1.36 dB, respectively. Based on this, the layout and tape-out are carded out. The area of layout is 0. 072 mm^2. The test results are basically consistent with the circuit simulation.
