目的:比较采用充填器与HAWE牙体颈部成型片对楔状缺损牙进行光固化复合树脂充填成型治疗后充填体边缘微渗漏情况。方法:取新鲜离体双尖牙40颗,在颊侧颈部釉牙骨质界处制备标准V类(3mm×2mm×2mm)洞型,随机分成2组,A组采用不锈...目的:比较采用充填器与HAWE牙体颈部成型片对楔状缺损牙进行光固化复合树脂充填成型治疗后充填体边缘微渗漏情况。方法:取新鲜离体双尖牙40颗,在颊侧颈部釉牙骨质界处制备标准V类(3mm×2mm×2mm)洞型,随机分成2组,A组采用不锈钢两头扁充填器,B组采用颈部成型片行复合树脂充填治疗。样本经冷热循环后,在2%亚甲基蓝溶液中染色24h,将充填体正中颊舌向纵行剖开,立体显微镜下观察修复体边缘染色情况,采用Image-Pro plus 6.0图像分析软件测量微渗漏深度。结果:两种方法均有微渗漏现象发生,A组边缘微渗漏深度为(0.641±0.370)mm,B组边缘微渗漏深度为(0.395±0.462)mm。两种方法树脂充填后边缘微渗漏程度及深度差异均有统计学意义(P<0.05)。结论:虽然两种方法均不能消除充填体边缘微渗漏,但用颈部成型片的边缘封闭性明显优于传统充填器,而且操作简单,方便,节省时间,适合临床推广。展开更多
A 2 5GHz fully integrated LC VCO is fabricated in a standard single poly 4 metal 0 35μm digital CMOS process,using a complementary cross coupled topology for lowering power dissipation and reducing the effect of...A 2 5GHz fully integrated LC VCO is fabricated in a standard single poly 4 metal 0 35μm digital CMOS process,using a complementary cross coupled topology for lowering power dissipation and reducing the effect of 1/ f noise.An on chip LC filtering technique is used to lower the high frequency noise.Accumulation varactors are used to widen frequency tuning.The measured tuning range is 23 percent.A single hexadecagon symmetric on chip spiral is used with grounded shield pattern to reduce the chip area and maximize the quality factor.A phase noise of -118dBc/Hz at 1MHz offset is measured.The power dissipation is 4mA at V DD =3 3V.展开更多
文摘目的:比较采用充填器与HAWE牙体颈部成型片对楔状缺损牙进行光固化复合树脂充填成型治疗后充填体边缘微渗漏情况。方法:取新鲜离体双尖牙40颗,在颊侧颈部釉牙骨质界处制备标准V类(3mm×2mm×2mm)洞型,随机分成2组,A组采用不锈钢两头扁充填器,B组采用颈部成型片行复合树脂充填治疗。样本经冷热循环后,在2%亚甲基蓝溶液中染色24h,将充填体正中颊舌向纵行剖开,立体显微镜下观察修复体边缘染色情况,采用Image-Pro plus 6.0图像分析软件测量微渗漏深度。结果:两种方法均有微渗漏现象发生,A组边缘微渗漏深度为(0.641±0.370)mm,B组边缘微渗漏深度为(0.395±0.462)mm。两种方法树脂充填后边缘微渗漏程度及深度差异均有统计学意义(P<0.05)。结论:虽然两种方法均不能消除充填体边缘微渗漏,但用颈部成型片的边缘封闭性明显优于传统充填器,而且操作简单,方便,节省时间,适合临床推广。
文摘A 2 5GHz fully integrated LC VCO is fabricated in a standard single poly 4 metal 0 35μm digital CMOS process,using a complementary cross coupled topology for lowering power dissipation and reducing the effect of 1/ f noise.An on chip LC filtering technique is used to lower the high frequency noise.Accumulation varactors are used to widen frequency tuning.The measured tuning range is 23 percent.A single hexadecagon symmetric on chip spiral is used with grounded shield pattern to reduce the chip area and maximize the quality factor.A phase noise of -118dBc/Hz at 1MHz offset is measured.The power dissipation is 4mA at V DD =3 3V.
