The effect of changing Be doping concentration in GaAs layer on the integrated photosensitivity for nega- tive-electron-affinity GaAs photocathodes is investigated. Two GaAs samples with the monolayer structure and th...The effect of changing Be doping concentration in GaAs layer on the integrated photosensitivity for nega- tive-electron-affinity GaAs photocathodes is investigated. Two GaAs samples with the monolayer structure and the muhilayer structure are grown by molecular beam epitaxy. The former has a constant Be concentration of 1 × 10^19 cm^-3, while the latter includes four layers with Be doping concentrations of 1 × 10^19, 7 × 10^18, 4 × 10^18, and 1 × 10^18 cm^-3 from the bottom to the surface. Negative-electron-affinity GaAs photocathodes are fabricated by exciting the sample surfaces with alternating input of Cs and O in the high vacuum system. The spectral response results measured by the on-line spectral response measurement system show that the integrated photosensitivity of the photocathode with the muhilayer structure enhanced by at least 50% as compared to that of the monolayer structure. This attributes to the improvement in the crystal quality and the increase in the surface escape probability. Different stress situations are observed on GaAs samples with monolayer structure and muhilayer structure, respectively.展开更多
The use of diffusers around the horizontal-axis wind turbines has been widely studied since the diffuser improves the power coefficient of the turbine and it is often called DAWTs （diffuser augmented wind turbines）....The use of diffusers around the horizontal-axis wind turbines has been widely studied since the diffuser improves the power coefficient of the turbine and it is often called DAWTs （diffuser augmented wind turbines）.Turbines using diffuser are called DWATs （Diffuser Augmented Turbines）,and have efficiency bigger than the Betz limit （maximum energy flow extracted = 59.26%）. Thus, this study presents a mathematical model describing the behavior of the velocity profile internally to a diffuser according to the characteristics of flow and geometry of a conical diffuser. The results are compared with experimental data and show good agreement.展开更多
文摘The effect of changing Be doping concentration in GaAs layer on the integrated photosensitivity for nega- tive-electron-affinity GaAs photocathodes is investigated. Two GaAs samples with the monolayer structure and the muhilayer structure are grown by molecular beam epitaxy. The former has a constant Be concentration of 1 × 10^19 cm^-3, while the latter includes four layers with Be doping concentrations of 1 × 10^19, 7 × 10^18, 4 × 10^18, and 1 × 10^18 cm^-3 from the bottom to the surface. Negative-electron-affinity GaAs photocathodes are fabricated by exciting the sample surfaces with alternating input of Cs and O in the high vacuum system. The spectral response results measured by the on-line spectral response measurement system show that the integrated photosensitivity of the photocathode with the muhilayer structure enhanced by at least 50% as compared to that of the monolayer structure. This attributes to the improvement in the crystal quality and the increase in the surface escape probability. Different stress situations are observed on GaAs samples with monolayer structure and muhilayer structure, respectively.
文摘The use of diffusers around the horizontal-axis wind turbines has been widely studied since the diffuser improves the power coefficient of the turbine and it is often called DAWTs （diffuser augmented wind turbines）.Turbines using diffuser are called DWATs （Diffuser Augmented Turbines）,and have efficiency bigger than the Betz limit （maximum energy flow extracted = 59.26%）. Thus, this study presents a mathematical model describing the behavior of the velocity profile internally to a diffuser according to the characteristics of flow and geometry of a conical diffuser. The results are compared with experimental data and show good agreement.
