目的系统评价高迁移率族蛋白B1(high mobility group box 1,HMGB1)与系统性血管炎(systemic vasculitis,SV)的相关性,为评估HMGB1对SV诊断及疾病评估的临床价值提供依据。方法计算机检索PubMed、Medline、Web of science、Corchrane lib...目的系统评价高迁移率族蛋白B1(high mobility group box 1,HMGB1)与系统性血管炎(systemic vasculitis,SV)的相关性,为评估HMGB1对SV诊断及疾病评估的临床价值提供依据。方法计算机检索PubMed、Medline、Web of science、Corchrane library、中国知网、万方和维普等数据库,检索时限为建库至2018年12月,收集所有关于HMGB1与SV的相关研究。由2名独立的评价者根据纳入及排除标准筛查文献,提取有效数据并运用Stata 12.0统计学软件进行Meta分析。结果最终纳入16项研究。研究显示,SV患者的HMGB1水平显著高于非活动期患者和健康对照组(HC)。亚组分析表明小血管炎和变应性血管炎患者的HMGB1水平显著高于HC。按区域进行亚组分析的结果显示,亚洲和欧洲SV患者的HMGB1水平显著增高。结论Meta分析表明SV患者的HMGB1水平明显高于HC患者,且可以反应疾病的活动程度,但需进一步扩大样本量来确认研究结果。展开更多
Lattice-matched InAlN/AlN/GaN high electron mobility transistors (HEMTs) grown on sapphire substrate by using low-pressure metallorganic chemical vapor deposition were prepared, and the comprehensive DC characteristic...Lattice-matched InAlN/AlN/GaN high electron mobility transistors (HEMTs) grown on sapphire substrate by using low-pressure metallorganic chemical vapor deposition were prepared, and the comprehensive DC characteristics were implemented by Keithley 4200 Semiconductor Characterization System. The experimental results indicated that a maximum drain current over 400 mA/mm and a peak external transconductance of 215 mS/mm can be achieved in the initial HEMTs. However, after the devices endured a 10-h thermal aging in furnace under nitrogen condition at 300 ℃, the maximum reduction of saturation drain current and external transconductance at high gate-source voltage and drain-source voltage were 30% and 35%, respectively. Additionally, an increased drain-source leakage current was observed at three-terminal off-state. It was inferred that the degradation was mainly related to electron-trapping defects in the InAlN barrier layer.展开更多
文摘目的系统评价高迁移率族蛋白B1(high mobility group box 1,HMGB1)与系统性血管炎(systemic vasculitis,SV)的相关性,为评估HMGB1对SV诊断及疾病评估的临床价值提供依据。方法计算机检索PubMed、Medline、Web of science、Corchrane library、中国知网、万方和维普等数据库,检索时限为建库至2018年12月,收集所有关于HMGB1与SV的相关研究。由2名独立的评价者根据纳入及排除标准筛查文献,提取有效数据并运用Stata 12.0统计学软件进行Meta分析。结果最终纳入16项研究。研究显示,SV患者的HMGB1水平显著高于非活动期患者和健康对照组(HC)。亚组分析表明小血管炎和变应性血管炎患者的HMGB1水平显著高于HC。按区域进行亚组分析的结果显示,亚洲和欧洲SV患者的HMGB1水平显著增高。结论Meta分析表明SV患者的HMGB1水平明显高于HC患者,且可以反应疾病的活动程度,但需进一步扩大样本量来确认研究结果。
基金Supported by National Natural Science Foundation of China(No.60876009)Natural Science Foundation of Tianjin(No.09JCZDJC16600)
文摘Lattice-matched InAlN/AlN/GaN high electron mobility transistors (HEMTs) grown on sapphire substrate by using low-pressure metallorganic chemical vapor deposition were prepared, and the comprehensive DC characteristics were implemented by Keithley 4200 Semiconductor Characterization System. The experimental results indicated that a maximum drain current over 400 mA/mm and a peak external transconductance of 215 mS/mm can be achieved in the initial HEMTs. However, after the devices endured a 10-h thermal aging in furnace under nitrogen condition at 300 ℃, the maximum reduction of saturation drain current and external transconductance at high gate-source voltage and drain-source voltage were 30% and 35%, respectively. Additionally, an increased drain-source leakage current was observed at three-terminal off-state. It was inferred that the degradation was mainly related to electron-trapping defects in the InAlN barrier layer.
